Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes
Whiteside, M., Arulkumaran, S., Dikme, Y., Sandupatla, A., Ng, G.I.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.12.2020)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.12.2020)
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Journal Article
Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition
Wang, D., Jia, S., Chen, K. J., Lau, K. M., Dikme, Y., van Gemmern, P., Lin, Y. C., Kalisch, H., Jansen, R. H., Heuken, M.
Published in Journal of applied physics (01.03.2005)
Published in Journal of applied physics (01.03.2005)
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Journal Article
Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE
HANG, D. R, CHOU, Mitch M. C, LIUWEN CHANG, DIKME, Y, HEUKEN, M
Published in Journal of crystal growth (15.01.2009)
Published in Journal of crystal growth (15.01.2009)
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Conference Proceeding
Journal Article
Crystal growth and properties of LiAlO2 and nonpolar GaN on LiAlO2 substrate
Chou, Mitch M. C., Hang, D. R., Kalisch, H., Jansen, R. H., Dikme, Y., Heuken, Michael, Yablonskii, G. P.
Published in Journal of applied physics (15.05.2007)
Published in Journal of applied physics (15.05.2007)
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Journal Article
Investigation of buffer growth temperatures for MOVPE of GaN on Si(1 1 1)
Dikme, Y., Gerstenbrandt, G., Alam, A., Kalisch, H., Szymakowski, A., Fieger, M., Jansen, R.H., Heuken, M.
Published in Journal of crystal growth (01.02.2003)
Published in Journal of crystal growth (01.02.2003)
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Conference Proceeding
MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates
Fieger, M., Eickelkamp, M., Rahimzadeh Koshroo, L., Dikme, Y., Noculak, A., Kalisch, H., Heuken, M., Jansen, R.H., Vescan, A.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Conference Proceeding
Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates
MAUDER, C, RAHIMZADEH KHOSHROO, L, KALISCH, H, JANSEN, R. H, BEHMENBURG, H, WEN, T. C, DIKME, Y, RZHEUTSKII, M. V, YABLONSKII, G. P, WOITOK, J, CHOU, M. M. C, HEUKEN, M
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Conference Proceeding
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Optimisation of AlInN/GaN HEMT structures
Rahimzadeh Khoshroo, L., Mauder, C., Zhang, W., Fieger, M., Eickelkamp, M., Dikme, Y., Woitok, J., Niyamakom, P., Vescan, A., Kalisch, H., Heuken, M., Jansen, R. H.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
High efficiency integral III-N/II-VI blue-green laser converter
SOROKIN, S. V, SEDOVA, I. V, HEUKEN, M, IVANOV, S. V, TOROPOV, A. A, YABLONSKII, G. P, LUTSENKO, E. V, VOINILOVICH, A. G, DANILCHYK, A. V, DIKME, Y, KALISCH, H, SCHINELLER, B
Published in Electronics letters (01.02.2007)
Published in Electronics letters (01.02.2007)
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Journal Article
m -plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE
Behmenburg, H., Wen, T. C., Dikme, Y., Mauder, C., Khoshroo, L. Rahimzadeh, Chou, M. M. C., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J., Kalisch, H., Jansen, R. H., Heuken, M.
Published in Physica Status Solidi (b) (01.05.2008)
Published in Physica Status Solidi (b) (01.05.2008)
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Journal Article
Characterization of GaN grown on patterned Si(1 1 1) substrates
Wang, D., Dikme, Y., Jia, S., Chen, K.J., Lau, K.M., van Gemmern, P., Lin, Y.C., Kalisch, H., Jansen, R.H., Heuken, M.
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
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Conference Proceeding
New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance
HARDTDEGEN, H, KALUZA, N, STRITTMATTER, A, REISSMANN, L, BIMBERG, D, ZETTLER, J.-T, SOFER, Z, CHO, Y. S, STEINS, R, BAY, H. L, DIKME, Y, KALISCH, H, JANSEN, R. H, HEUKEN, M
Published in Physica status solidi. A, Applications and materials science (Print) (01.05.2006)
Published in Physica status solidi. A, Applications and materials science (Print) (01.05.2006)
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Conference Proceeding
Laser threshold and optical gain of blue optically pumped InGaN/GaN multiple quantum wells (MQW) grown on Si
Lutsenko, E. V., Danilchyk, A. V., Tarasuk, N. P., Andryieuski, A. V., Pavlovskii, V. N., Gurskii, A. L., Yablonskii, G. P., Kalisch, H., Jansen, R. H., Dikme, Y., Schineller, B., Heuken, M.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
AlInN/GaN HEMTs on sapphire: dc and pulsed characterisation
Fieger, M., Eickelkamp, M., Zhang, W., Khoshroo, L. Rahimzadeh, Mauder, C., Dikme, Y., Heuken, M., Noculak, A., Kalisch, H., Jansen, R. H., Vescan, A.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
Growth and characterization of GaN-based structures on SiCOI-engineered substrates
Dikme, Y., van Gemmern, P., Lin, Y.C., Szymakowski, A., Kalisch, H., Faure, B., Richtarch, C., Larhèche, H., Bove, P., Letertre, F., Woitok, J.F., Efthimiadis, K., Jansen, R.H., Heuken, M.
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
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Journal Article
Conference Proceeding
MOVPE growth and investigation of AlInN/AlN multiple quantum wells
Mauder, C., Khoshroo, L. Rahimzadeh, Rzheutski, M. V., Lutsenko, E. V., Yablonskii, G., Kozlovsky, V. I., Woitok, J., Dikme, Y., Heuken, M., Kalisch, H., Jansen, R. H.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
New method for the in situ determination of Alx Ga1-x N composition in MOVPE by real-time optical reflectance
Hardtdegen, H., Kaluza, N., Sofer, Z., Cho, Y. S., Steins, R., Bay, H. L., Dikme, Y., Kalisch, H., Jansen, R. H, Heuken, M., Strittmatter, A., Reißmann, L., Bimberg, D., Zettler, J.-T.
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
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Journal Article
Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates
Dikme, Y., Fieger, M., Eickelkamp, M., Giesen, C., Lutsenko, E. V., Yablonskii, G. P., Szymakowski, A., Jessen, F. O., Vescan, A., Kalisch, H., Heuken, M., Jansen, R. H.
Published in Physica status solidi. C (01.06.2006)
Published in Physica status solidi. C (01.06.2006)
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Journal Article
Cathodoluminescence and electrophysical characterization of AlxGa1-xN epilayers
Kozlovsky, V. I., Skasyrsky, Y. K., Dikme, Y., Kalisch, H., Jansen, R. H., Litvinov, V. G., Heuken, M.
Published in Physica status solidi. C (01.06.2006)
Published in Physica status solidi. C (01.06.2006)
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Journal Article
AlGaN-GaN HEMTs on patterned silicon (111) substrate
Shuo Jia, Dikme, Y., Deliang Wang, Chen, K.J., Lau, K.M., Heuken, M.
Published in IEEE electron device letters (01.03.2005)
Published in IEEE electron device letters (01.03.2005)
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