An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling
Diaz, C.H., Hun-Jan Tao, Yao-Ching Ku, Yen, A., Young, K.
Published in IEEE electron device letters (01.06.2001)
Published in IEEE electron device letters (01.06.2001)
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Journal Article
Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design
Kleveland, B., Diaz, C.H., Vook, D., Madden, L., Lee, T.H., Wong, S.S.
Published in IEEE journal of solid-state circuits (01.10.2001)
Published in IEEE journal of solid-state circuits (01.10.2001)
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Journal Article
Leakage scaling in deep submicron CMOS for SoC
Yo-Sheng Lin, Chung-Cheng Wu, Chih-Sheng Chang, Rong-Ping Yang, Wei-Ming Chen, Jhon-Jhy Liaw, Diaz, C.H.
Published in IEEE transactions on electron devices (01.06.2002)
Published in IEEE transactions on electron devices (01.06.2002)
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Journal Article
Transistor-and Circuit-Design Optimization for Low-Power CMOS
Mi-Chang Chang, Chih-Sheng Chang, Chih-Ping Chao, Ken-Ichi Goto, Meikei Ieong, Lee-Chung Lu, Diaz, C.H.
Published in IEEE transactions on electron devices (01.01.2008)
Published in IEEE transactions on electron devices (01.01.2008)
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Journal Article
CMOS technology for MS/RF SoC
Diaz, C.H., Tang, D.D., Sun, J.Y.-C.
Published in IEEE transactions on electron devices (01.03.2003)
Published in IEEE transactions on electron devices (01.03.2003)
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Journal Article
Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs
van Dal, M.J.H., Vellianitis, G., Doornbos, G., Duriez, B., Holland, M.C., Vasen, T., Afzalian, A., Chen, E., Su, S.K., Chen, T.K., Shen, T.M., Wu, Z.Q., Diaz, C.H.
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Conference Proceeding
A Millisecond-Anneal-Assisted Selective Fully Silicided (FUSI) Gate Process
Da-Wen Lin, Wang, M., Ming-Lung Cheng, Yi-Ming Sheu, Tarng, B., Che-Min Chu, Chun-Wen Nieh, Chia-Ping Lo, Wen-Chi Tsai, Lin, R., Shyh-Wei Wang, Kuan-Lun Cheng, Chii-Ming Wu, Ming-Ta Lei, Chung-Cheng Wu, Diaz, C.H., Ming-Jer Chen
Published in IEEE electron device letters (01.09.2008)
Published in IEEE electron device letters (01.09.2008)
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Journal Article
Separation of channel backscattering coefficients in nanoscale MOSFETs
Ming-Jer Chen, Huan-Tsung Huang, Yi-Chin Chou, Rong-Ting Chen, Yin-Ta Tseng, Po-Nien Chen, Diaz, C.H.
Published in IEEE transactions on electron devices (01.09.2004)
Published in IEEE transactions on electron devices (01.09.2004)
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Journal Article
MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)
Chang-Hoon Choi, Jung-Suk Goo, Tae-Young Oh, Zhiping Yu, Dutton, R.W., Bayoumi, A., Min Cao, Voorde, P.V., Vook, D., Diaz, C.H.
Published in IEEE electron device letters (01.06.1999)
Published in IEEE electron device letters (01.06.1999)
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Journal Article
Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology
Wang, H.H.-C., Diaz, C.H., Boon-Khim Liew, Sun, J.Y.-C., Tahui Wang
Published in IEEE electron device letters (01.12.2000)
Published in IEEE electron device letters (01.12.2000)
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Journal Article
Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices
Wang, H.C.-H., Chih-Chiang Wang, Diaz, C.H., Boon-Khim Liew, Sun, J.Y.-C., Tahui Wang
Published in IEEE transactions on electron devices (01.01.2002)
Published in IEEE transactions on electron devices (01.01.2002)
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Journal Article
Al In1−As Sb1− alloys lattice matched to InAs(1 0 0) grown by molecular beam epitaxy
Rojas-Ramirez, J.S., Wang, S., Contreras-Guerrero, R., Caro, M., Bhatnagar, K., Holland, M., Oxland, R., Doornbos, G., Passlack, M., Diaz, C.H., Droopad, R.
Published in Journal of crystal growth (01.09.2015)
Published in Journal of crystal growth (01.09.2015)
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Journal Article
AlxIn1−xAsySb1−y alloys lattice matched to InAs(100) grown by molecular beam epitaxy
Rojas-Ramirez, J.S., Wang, S., Contreras-Guerrero, R., Caro, M., Bhatnagar, K., Holland, M., Oxland, R., Doornbos, G., Passlack, M., Diaz, C.H., Droopad, R.
Published in Journal of crystal growth (01.09.2015)
Published in Journal of crystal growth (01.09.2015)
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Journal Article
MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
Ramvall, Peter, Wang, C.H., Astromskas, Gvidas, Vellianitis, Georgios, Holland, Martin, Droopad, Ravi, Samuelson, Lars, Wernersson, Lars-Erik, Paslack, Matthias, Diaz, C.H.
Published in Journal of crystal growth (2013)
Published in Journal of crystal growth (2013)
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Journal Article
Growth of heterostructures on InAs for high mobility device applications
Contreras-Guerrero, R., Wang, S., Edirisooriya, M., Priyantha, W., Rojas-Ramirez, J.S., Bhuwalka, K., Doornbos, G., Holland, M., Oxland, R., Vellianitis, G., Van Dal, M., Duriez, B., Passlack, M., Diaz, C.H., Droopad, R.
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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Journal Article
Conference Proceeding