Gate oxide degradation of SiC MOSFET under short-circuit aging tests
Mbarek, S., Fouquet, F., Dherbecourt, P., Masmoudi, M., Latry, O.
Published in Microelectronics and reliability (01.09.2016)
Published in Microelectronics and reliability (01.09.2016)
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Journal Article
Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET
Mbarek, S., Dherbécourt, P., Latry, O., Fouquet, F.
Published in Microelectronics and reliability (01.09.2017)
Published in Microelectronics and reliability (01.09.2017)
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Journal Article
Robustness of 4H-SiC 1200 V Schottky diodes under high electrostatic discharge like human body model stresses: An in-depth failure analysis
DENIS, P, DHERBECOURT, P, LATRY, O, GENEVOIS, C, CUVILLY, F, BRAULT, M, KADI, M
Published in Diamond and related materials (01.04.2014)
Published in Diamond and related materials (01.04.2014)
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Journal Article
Achieving of an optical very high frequency modulated wave source using heterodyne technique
Dherbecourt, P., Latry, O., Joubert, E., Dibin, P., Ketata, M.
Published in Optics communications (01.02.2002)
Published in Optics communications (01.02.2002)
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Journal Article
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications
Latry, O., Dherbécourt, P., Mourgues, K., Maanane, H., Sipma, J.P., Cornu, F., Eudeline, P., Masmoudi, M.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Journal Article
Conference Proceeding
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application
Lachéze, L., Latry, O., Dherbécourt, P., Mourgues, K., Purohit, V., Maanane, H., Sipma, J.P., Cornu, F., Eudeline, P.
Published in Microelectronics and reliability (01.08.2011)
Published in Microelectronics and reliability (01.08.2011)
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Journal Article
Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena Project supported by the French Department of Defense (DGA)
Latry, O., Divay, A., Fadil, D., Dherbécourt, P.
Published in Journal of semiconductors (01.01.2017)
Published in Journal of semiconductors (01.01.2017)
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Journal Article
Experimental study of 600V GaN transistor under the short-circuit aging tests
Fu, J-Z., Fouquet, F., Kadi, M., Dherbecourt, P.
Published in 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON) (01.05.2018)
Published in 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON) (01.05.2018)
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Conference Proceeding
Aging of GaN GIT under repetitive short-circuit tests
Fu, J-Z., Fouquet, F., Kadi, M., Dherbecourt, P.
Published in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) (01.05.2018)
Published in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) (01.05.2018)
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Conference Proceeding
Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses: An in-depth failure analysis
Denis, P., Dherbécourt, P., Latry, O., Genevois, C., Cuvilly, F., Brault, M., Kadi, M.
Published in Diamond and related materials (01.04.2014)
Published in Diamond and related materials (01.04.2014)
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Journal Article
A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications
Latry, O., Dherbécourt, P., Mourgues, K., Maanane, H., Sipma, J.P., Cornu, F., Eudeline, P., Masmoudi, M.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Journal Article
New approach for thermal investigation of a III - V power transistor
Fontaine, M., Joubert, E., Latry, O., Dherbecourt, P., Ketata, M.
Published in 2008 14th International Workshop on Thermal Inveatigation of ICs and Systems (01.09.2008)
Published in 2008 14th International Workshop on Thermal Inveatigation of ICs and Systems (01.09.2008)
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Conference Proceeding