Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz
EGARD, M, JOHANSSON, S, JOHANSSON, A.-C, PERSSON, K.-M, DEY, A. W, BORG, B. M, THELANDER, C, WERNERSSON, L.-E, LIND, E
Published in Nano letters (10.03.2010)
Published in Nano letters (10.03.2010)
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Journal Article
Vertical InAs Nanowire Wrap Gate Transistors with f t > 7 GHz and f max > 20 GHz
Egard, M, Johansson, S, Johansson, A.-C, Persson, K.-M, Dey, A. W, Borg, B. M, Thelander, C, Wernersson, L.-E, Lind, E
Published in Nano letters (10.03.2010)
Published in Nano letters (10.03.2010)
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Journal Article
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
Dey, A. W., Borg, B. M., Ganjipour, B., Ek, M., Dick, K. A., Lind, E., Thelander, C., Wernersson, L.
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Journal Article
High-Performance InAs Nanowire MOSFETs
Dey, A. W., Thelander, C., Lind, E., Dick, K. A., Borg, B. M., Borgstrom, M., Nilsson, P., Wernersson, L.
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
Design of radial nanowire tunnel field-effect transistors
Dey, A. W., Lind, E., Svensson, J., Ek, M., Thelander, C., Wernersson, L-E
Published in 72nd Annual Device Research Conference (DRC),2014-06-22 - 2014-06-25 (01.06.2014)
Published in 72nd Annual Device Research Conference (DRC),2014-06-22 - 2014-06-25 (01.06.2014)
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Conference Proceeding
High current density InAsSb/GaSb tunnel field effect transistors
Dey, A. W., Borg, B. M., Ganjipour, B., Ek, M., Dick, K. A., Lind, E., Nilsson, P., Thelander, C., Wernersson, Lars-Erik
Published in 70th Annual Device Research Conference (DRC),2012-06-18 (01.06.2012)
Published in 70th Annual Device Research Conference (DRC),2012-06-18 (01.06.2012)
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Conference Proceeding
15 nm diameter InAs nanowire MOSFETs
Dey, A. W., Thelander, C., Borgstrom, M., Borg, B. M., Lind, E., Wernersson, L.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz
Egard, M, Johansson, S, Johansson, A-C, Persson, K-M, Dey, A W, Borg, B M, Thelander, C, Wernersson, L-E, Lind, E
Published in Nano letters (10.03.2010)
Published in Nano letters (10.03.2010)
Get full text
Journal Article