High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal
Li, Z., Waldron, J., Chowdhury, S., Zhao, L., Detchprohm, T., Wetzel, C., Karlicek Jr, R. F., Chow, T. P.
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Journal Article
Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond
Lee, S. C, Jiang, Y.-B, Durniak, M. T, Detchprohm, T, Wetzel, C, Brueck, S. R. J
Published in Crystal growth & design (06.04.2016)
Published in Crystal growth & design (06.04.2016)
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Journal Article
Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes
Senawiratne, J., Li, Y., Zhu, M., Xia, Y., Zhao, W., Detchprohm, T., Chatterjee, A., Plawsky, J.L., Wetzel, C.
Published in Journal of electronic materials (01.05.2008)
Published in Journal of electronic materials (01.05.2008)
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Journal Article
Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates
Detchprohm, T., Zhu, M., Li, Y., Xia, Y., Liu, L., Hanser, D., Wetzel, C.
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Journal Article
Conference Proceeding
Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition
Chen, Jeng-Hung, Feng, Zhe-Chuan, Tsai, Hung-Ling, Yang, Jer-Ren, Li, P., Wetzel, C., Detchprohm, T., Nelson, J.
Published in Thin solid films (01.03.2006)
Published in Thin solid films (01.03.2006)
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Journal Article
Conference Proceeding
Determination of the conduction band electron effective mass in hexagonal GaN
DRECHSLER, M, HOFMANN, D. M, MEYER, B. K, DETCHPROHM, T, AMANO, H, AKASAKI, I
Published in Japanese Journal of Applied Physics (1995)
Published in Japanese Journal of Applied Physics (1995)
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Journal Article
Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth
Detchprohm, T., Xia, Y., Xi, Y., Zhu, M., Zhao, W., Li, Y., Schubert, E.F., Liu, L., Tsvetkov, D., Hanser, D., Wetzel, C.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding
Light-emitting diode development on polar and non-polar GaN substrates
Wetzel, C., Zhu, M., Senawiratne, J., Detchprohm, T., Persans, P.D., Liu, L., Preble, E.A., Hanser, D.
Published in Journal of crystal growth (15.08.2008)
Published in Journal of crystal growth (15.08.2008)
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Journal Article
Conference Proceeding
Characterization of GaInN/GaN layers for green emitting laser diodes
Wetzel, C., Li, Yufeng, Senawiratne, J., Zhu, Mingwei, Xia, Yong, Tomasulo, S., Persans, P.D., Liu, Lianghong, Hanser, D., Detchprohm, T.
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Journal Article
Conference Proceeding
Improved performance of GaInN based deep green light emitting diodes through V-defect reduction
Detchprohm, T., Zhu, M., Xia, Y., Li, Y., Zhao, W., Senawiratne, J., Wetzel, C.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
Shallow donors in GaN—The binding energy and the electron effective mass
Meyer, B.K., Volm, D., Graber, A., Alt, H.C., Detchprohm, T., Amano, A., Akasaki, I.
Published in Solid state communications (01.09.1995)
Published in Solid state communications (01.09.1995)
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Journal Article
Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates
Senawiratne, J., Zhao, W., Detchprohm, T., Chatterjee, A., Li, Y., Zhu, M., Xia, Y., Plawsky, J. L., Wetzel, C.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
Very strong nonlinear optical absorption in green GaInN/GaN multiple quantum well structures
Zhao, W., Zhu, M., Xia, Y., Li, Y., Senawiratne, J., You, S., Detchprohm, T., Wetzel, C.
Published in Physica Status Solidi (b) (01.05.2008)
Published in Physica Status Solidi (b) (01.05.2008)
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Journal Article
V-defect analysis in green and deep green light emitting diode structures
Zhu, M., Detchprohm, T., You, S., Wang, Y., Xia, Y., Zhao, W., Li, Y., Senawiratne, J., Zhang, Z., Wetzel, C.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
Photon modulated electroluminescence of GaInN/GaN multiple quantum well light emitting diodes
Li, Y., Senawiratne, J., Xia, Y., Zhao, W., Zhu, M., Detchprohm, T., Wetzel, C.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
The growth of thick GaN film on sapphire substrate by using ZnO buffer layer
Detchprohm, T., Amano, H., Hiramatsu, K., Akasaki, I.
Published in Journal of crystal growth (01.03.1993)
Published in Journal of crystal growth (01.03.1993)
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Journal Article
Conference Proceeding
Temperature dependence of the quantum efficiency in green light emitting diode dies
Li, Y., Zhao, W., Xia, Y., Zhu, M., Senawiratne, J., Detchprohm, T., Schubert, E. F., Wetzel, C.
Published in Physica status solidi. C (01.06.2007)
Published in Physica status solidi. C (01.06.2007)
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Journal Article
The barrier height and interface effect of Au-n-GaN Schottky diode
Khan, M R H, Detchprohm, T, Hacke, P, Hiramatsu, K, Sawaki, N
Published in Journal of physics. D, Applied physics (14.06.1995)
Published in Journal of physics. D, Applied physics (14.06.1995)
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Journal Article