Advantages of LDD-only implanted fluorine with submicron CMOS technologies
Mogul, H.C., Rost, T.A., Der-Gao Lin
Published in IEEE transactions on electron devices (01.03.1997)
Published in IEEE transactions on electron devices (01.03.1997)
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Journal Article
The effect of fluorine on MOSFET channel length
Lin, D.-G., Rost, T.A., Lee, H.S., Lin, D.-Y., Tsao, A.J., McKee, B.
Published in IEEE electron device letters (01.10.1993)
Published in IEEE electron device letters (01.10.1993)
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Journal Article
The impact of fluorine on CMOS channel length and shallow junction formation
Der-Gao Lin, Rost, T.A.
Published in Proceedings of IEEE International Electron Devices Meeting (1993)
Published in Proceedings of IEEE International Electron Devices Meeting (1993)
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Conference Proceeding
A novel LDMOS structure with a step gate oxide
Der-Gao Lin, Tu, S.L., Yee-Chaung See, Pak Tam
Published in Proceedings of International Electron Devices Meeting (1995)
Published in Proceedings of International Electron Devices Meeting (1995)
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Conference Proceeding
METHOD OF FORMING SEMICONDUCTOR ELEMENT HAVING CAPACITOR STRUCTURE
LOHN CHRISTOPHER STERLING, LIN DER-GAO, WU KEVIN YUN-KANG, GANGER JEFFREY D, WENG KENNETH CHIA-KUN
Year of Publication 03.03.2000
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Year of Publication 03.03.2000
Patent
Method for forming a semiconductor device having a capacitor structure
WENG; KENNETH CHIA-KUN, LIN; DER-GAO, WU; KEVIN YUN-KANG, GANGER; JEFFREY D, LOHN; CHRISTOPHER STERLING
Year of Publication 16.11.1999
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Year of Publication 16.11.1999
Patent