Epitaxial n+-Ge/p+-Si(001) heterostructures with ultra sharp doping profiles for light emitting diode applications
Titova, A.M., Shengurov, V.G., Filatov, D.O., Denisov, S.A., Chalkov, V.Yu, Ved', M.V., Zaitzev, A.V., Sushkov, A.A., Alyabina, N.A.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.03.2023)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.03.2023)
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Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with co-evaporation of Sn
Shengurov, V.G., Chalkov, V.Yu, Denisov, S.A., Trushin, V.N., Zaitsev, A.V., Nezhdanov, A.V., Pavlov, D.A., Filatov, D.O.
Published in Journal of crystal growth (15.01.2022)
Published in Journal of crystal growth (15.01.2022)
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Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition
Shengurov, V.G., Denisov, S.A., Yu. Chalkov, V., Filatov, D.O., Kudrin, A.V., Sychyov, S.M., Trushin, V.N., Zaitsev, A.V., Titova, A.M., Alyabina, N.A.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.09.2020)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.09.2020)
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Conditions of growth of high-quality relaxed [Si.sub.1 - x][Ge.sub.x] layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
Shengurov, V.G, Chalkov, V.Yu, Denisov, S.A, Matveev, S.A, Nezhdanov, A.V, Mashin, A.I, Filatov, D.O, Stepikhova, M.V, Krasilnik, Z.F
Published in Semiconductors (Woodbury, N.Y.) (01.09.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2016)
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Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands
Filatov, D. O., Guseinov, D. V., Chalkov, V. Yu, Denisov, S. A., Shengurov, V. G.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2018)
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Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy
Filatov, D. O., Kazantseva, I. A., Shengurov, V. G., Chalkov, V. Yu, Denisov, S. A., Gorshkov, A. P., Mishkin, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2017)
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Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique
Shengurov, V. G., Chalkov, V. Yu, Denisov, S. A., Alyabina, N. A., Guseinov, D. V., Trushin, V. N., Gorshkov, A. P., Volkova, N. S., Ivanova, M. M., Kruglov, A. V., Filatov, D. O.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2015)
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Journal Article
Epitaxially grown monoisotopic Si, Ge, and [Si.sub.1-x] [Ge.sub.x] alloy layers: production and some properties
Detochenko, A.P, Denisov, S.A, Drozdov, M.N, Mashin, A.I, Gavva, V.A, Bulanov, A.D, Nezhdanov, A.V, Ezhevskii, A.A, Stepikhov, M.V, Chalkov, V. Yu, Trushin, V.N, Shengurov, D.V, Shengurov, V.G, Abrosimov, N.V, Riemann, H
Published in Semiconductors (Woodbury, N.Y.) (01.03.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2016)
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Journal Article
Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy
Boldyrevskii, P. B., Korovin, A. G., Denisov, S. A., Svetlov, S. P., Shengurov, V. G.
Published in Technical physics (01.11.2014)
Published in Technical physics (01.11.2014)
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Journal Article
[Ge.sub.x]/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates
Denisov, S.A, Matveev, S.A, Chalkov, V. Yu, Shengurov, V.G, Drozdov, Yu. N, Stepikhova, M.V, Shengurov, D.V, Krasilnik, Z.F
Published in Semiconductors (Woodbury, N.Y.) (01.03.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2014)
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Journal Article
Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands
Mashin, A. I., Nezhdanov, A. V., Filatov, D. O., Isakov, M. A., Shengurov, V. G., Chalkov, V. Yu, Denisov, S. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2010)
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