Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs
Sushkov, A. A., Pavlov, D. A., Andrianov, A. I., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Kriukov, R. N., Baidus, N. V., Yurasov, D. V., Rykov, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2022)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2022)
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Journal Article
Resistive Switching in Memristors Based on Ge/Si(001) Epitaxial Layers
Filatov, D. O., Shenina, M. E., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Kruglov, A. V., Vorontsov, V. A., Pavlov, D. A., Gorshkov, O. N.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2020)
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Journal Article
Resistive Switching in Metal–Oxide–Semiconductor Structures with GeSi Nanoislands on a Silicon Substrate
Tikhov, S. V., Shengurov, V. G., Denisov, S. A., Antonov, I. N., Kruglov, A. V., Belov, A. I., Filatov, D. O., Gorshkov, O. N., Mikhailov, A. N.
Published in Technical physics (01.10.2020)
Published in Technical physics (01.10.2020)
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Journal Article
Adsorption and electrical properties of nanodiamond powders in the presence of water vapor
Denisov, S. A., Sokolina, G. A., Bogatyreva, G. P., Grankina, T. Yu, Krasil’nikova, O. K., Plotnikova, E. V., Spitsyn, B. V.
Published in Protection of metals and physical chemistry of surfaces (01.05.2013)
Published in Protection of metals and physical chemistry of surfaces (01.05.2013)
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Journal Article
Experiment on Highly Efficient Deflection of a 1-GeV Proton Beam by a Bent Crystal at the PNPI Synchrocyclotron
Amerkanov, D. A., Vaishnene, L. A., Gavrikov, Yu. A., Gorshkov, B. L., Denisov, A. S., Ivanov, E. M., Ivanova, P. Yu, Ivanov, Yu. M., Koznov, M. A., Murzin, V. I., Shipunov, L. A.
Published in JETP letters (01.10.2023)
Published in JETP letters (01.10.2023)
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Journal Article
Ge/Si(001) Heteroepitaxial Layers Doped in the HW CVD Process by Impurity Evaporation from a Sublimating Ge Source
Titova, A. M., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Zaitsev, A. V., Alyabina, N. A., Kudrin, A. V., Zdoroveishev, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2024)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2024)
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Journal Article
Discrete Schrödinger Operator on a Tree, Angelesco Potentials, and Their Perturbations
Aptekarev, A. I., Denisov, S. A., Yattselev, M. L.
Published in Proceedings of the Steklov Institute of Mathematics (01.12.2020)
Published in Proceedings of the Steklov Institute of Mathematics (01.12.2020)
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Journal Article
Conference Proceeding
Formation of an Individual Modeling Environment in a Hybrid High-Performance Computing System
Volovich, K. I., Denisov, S. A., Malkovsky, S. I.
Published in Russian microelectronics (01.12.2020)
Published in Russian microelectronics (01.12.2020)
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Journal Article
GaAs diode structures with n+-p junction on Ge/Si templates
Rykov, A V, Denisov, S A, Shengurov, V G, Baidus, N V, Buzynin, Yu N
Published in Journal of physics. Conference series (01.03.2020)
Published in Journal of physics. Conference series (01.03.2020)
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Journal Article
Investigation of resistive switching in Ag/Ge/Si(001) stack by conductive atomic force microscopy
Vorontsov, V A, Antonov, D A, Kruglov, A V, Antonov, I N, Shenina, M E, Kotomina, V E, Shengurov, V G, Denisov, S A, Chalkov, V Yu, Pavlov, D A, Filatov, D O, Gorshkov, O N
Published in Journal of physics. Conference series (01.12.2021)
Published in Journal of physics. Conference series (01.12.2021)
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Journal Article
Scientific Services Consolidation Methods
Zatsarinny, A. A., Kondrashev, V. A., Sorokin, A. A., Denisov, S. A.
Published in Russian microelectronics (01.12.2020)
Published in Russian microelectronics (01.12.2020)
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Journal Article
Demonstration of the Effect of Resistive Switching of Individual Filaments in Memristor Ag/Ge/Si Structures Using Atomic Force Microscopy
Vorontsov, V. A., Antonov, D. A., Kruglov, A. V., Antonov, I. N., Kotomina, V. E., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Filatov, D. O., Gorshkov, O. N.
Published in Technical physics letters (01.11.2021)
Published in Technical physics letters (01.11.2021)
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Journal Article