Indium droplet formation during molecular beam epitaxy of InGaN
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Published in Journal of crystal growth (01.10.1999)
Published in Journal of crystal growth (01.10.1999)
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Use of molecular beam epitaxy for high-power AlGaAs laser production
Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu, Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu, Shkurko, A.P., Ter-Martirosyan, A.L.
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Published in Journal of crystal growth (01.05.1995)
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EPITAXIAL SEMICONDUCTOR NITRIDE STRUCTURE OF GROUP A3 ELEMENTS
SOKOLOV I.A, CHALYJ V.P, TER-MARTIROSJAN A.L, DEMIDOV D.M, POGOREL'SKIJ JU.V
Year of Publication 20.11.2000
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Year of Publication 20.11.2000
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METHOD OF PREPARING EPITAXIAL STRUCTURES OF NITRIDES OF A GROUP ELEMENTS
SOKOLOV I.A, KARPOV S.JU, CHALYJ V.P, DEMIDOV D.M, TER-MARTIROSJAN A.L, POGOREL'SKIJ JU.V
Year of Publication 10.07.1999
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Year of Publication 10.07.1999
Patent