Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Vincent, B., Shimura, Y., Takeuchi, S., Nishimura, T., Eneman, G., Firrincieli, A., Demeulemeester, J., Vantomme, A., Clarysse, T., Nakatsuka, O., Zaima, S., Dekoster, J., Caymax, M., Loo, R.
Published in Microelectronic engineering (01.04.2011)
Published in Microelectronic engineering (01.04.2011)
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Temperature dependence of energy gap of Ge1−xSnx alloys with x < 0.11 studied by photoreflectance
Zelazna, K, We na, M, Misiewicz, J, Dekoster, J, Kudrawiec, R
Published in Journal of physics. D, Applied physics (13.05.2016)
Published in Journal of physics. D, Applied physics (13.05.2016)
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Growth of high quality InP layers in STI trenches on miscut Si (0 0 1) substrates
Wang, G., Leys, M.R., Nguyen, N.D., Loo, R., Brammertz, G., Richard, O., Bender, H., Dekoster, J., Meuris, M., Heyns, M.M., Caymax, M.
Published in Journal of crystal growth (2011)
Published in Journal of crystal growth (2011)
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Ge1―xSnx stressors for strained-Ge CMOS
TAKEUCHI, S, SHIMURA, Y, LOO, R, SAKAI, A, NAKATSUKA, O, ZAIMA, S, NISHIMURA, T, VINCENT, B, ENEMAN, G, CLARYSSE, T, DEMEULEMEESTER, J, VANTOMME, A, DEKOSTER, J, CAYMAX, M
Published in Solid-state electronics (01.06.2011)
Published in Solid-state electronics (01.06.2011)
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Growth of high Ge content SiGe on (110) oriented Si wafers
Hikavyy, A., Vanherle, W., Vincent, B., Dekoster, J., Bender, H., Moussa, A., Witters, L., Hoffman, T., Loo, R.
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
Vincent, B., Loo, R., Vandervorst, W., Delmotte, J., Douhard, B., Valev, V.K., Vanbel, M., Verbiest, T., Rip, J., Brijs, B., Conard, T., Claypool, C., Takeuchi, S., Zaima, S., Mitard, J., De Jaeger, B., Dekoster, J., Caymax, M.
Published in Solid-state electronics (01.06.2011)
Published in Solid-state electronics (01.06.2011)
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Single crystalline InxGa1−xN layers on germanium by molecular beam epitaxy
Lieten, R. R, Tseng, W.-J, Yu, K. M, van de Graaf, W, Locquet, J.-P, Dekoster, J, Borghs, G
Published in CrystEngComm (01.01.2013)
Published in CrystEngComm (01.01.2013)
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Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
MERCKLING, C, CHANG, Y. C, MEURIS, M, HEYNS, M, CAYMAX, M, LU, C. Y, PENAUD, J, BRAMMERTZ, G, SCARROZZA, M, POURTOIS, G, KWO, J, HONG, M, DEKOSTER, J
Published in Surface science (01.10.2011)
Published in Surface science (01.10.2011)
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Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS
Merckling, C., Penaud, J., Kohen, D., Bellenger, F., Alian, A., Brammertz, G., El-Kazzi, M., Houssa, M., Dekoster, J., Caymax, M., Meuris, M., Heyns, M.M.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As
Lin, C.A., Chiu, H.C., Chiang, T.H., Chang, Y.C., Lin, T.D., Kwo, J., Wang, W.-E., Dekoster, J., Heyns, M., Hong, M.
Published in Journal of crystal growth (15.05.2011)
Published in Journal of crystal growth (15.05.2011)
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H2S molecular beam passivation of Ge(0 0 1)
MERCKLING, C, CHANG, Y. C, DEKOSTER, J, HEYNS, M. M, CAYMAX, M, LU, C. Y, PENAUD, J, EL-KAZZI, M, BELLENGER, F, BRAMMERTZ, G, HONG, M, KWO, J, MEURIS, M
Published in Microelectronic engineering (01.04.2011)
Published in Microelectronic engineering (01.04.2011)
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Stable and metastable iron silicide phases on Si(1 0 0)
Dézsi, I., Fetzer, Cs, Szűcs, I., Dekoster, J., Vantomme, A., Caymax, M.
Published in Surface science (30.12.2005)
Published in Surface science (30.12.2005)
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Coarsening of antiferromagnetic domains in multilayers: the key role of magnetocrystalline anisotropy
Nagy, D L, Bottyán, L, Croonenborghs, B, Deák, L, Degroote, B, Dekoster, J, Lauter, H J, Lauter-Pasyuk, V, Leupold, O, Major, M, Meersschaut, J, Nikonov, O, Petrenko, A, Rüffer, R, Spiering, H, Szilágyi, E
Published in Physical review letters (15.04.2002)
Published in Physical review letters (15.04.2002)
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GaN-on-Si: A scalable material system to realize cost effective next-generation solid state lighting and power devices
Decoutere, S, Osman, H, Dekoster, J, Dutta, B, Biesemans, S
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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(Invited) Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications
Nguyen, Ngoc Duy, Wang, Gang, Brammertz, Guy, Leys, Maarten, Waldron, Niamh, Winderickx, Gillis, Lismont, Kevin, Dekoster, J., Loo, Roger, Meuris, Marc, Degroote, Stefan, Buttitta, Francesco, O'Neil, Barry, Féron, Olivier, Lindner, Johannes, Schulte, Frank, Schineller, Bernd, Heuken, Michael, Caymax, Matty
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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Spin Density Wave Instability for Chromium in Fe/Cr(100) Multilayers
Meersschaut, J, Dekoster, J, Schad, R, Beliën, P, Rots, M
Published in Physical review letters (21.08.1995)
Published in Physical review letters (21.08.1995)
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Conservation of uniaxial symmetry in Fe/Ag multilayers grown on stepped Ag(0 0 1)
Degroote, B., Major, M., Meersschaut, J., Dekoster, J., Langouche, G.
Published in Surface science (2001)
Published in Surface science (2001)
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Respiratory symptoms and lung function abnormalities among machine operators in automobile production
Sprince, Nancy L., Thorne, Peter S., Popendorf, William, Zwerling, Craig, Miller, Elizabeth Ruth, DeKoster, Jeannine A.
Published in American journal of industrial medicine (01.04.1997)
Published in American journal of industrial medicine (01.04.1997)
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Observation of the bulk spin-flop in an Fe/Cr superlattice
Bottyán, L., Deák, L., Dekoster, J., Kunnen, E., Langouche, G., Meersschaut, J., Major, M., Nagy, D.L., Rüter, H.D., Szilágyi, E., Temst, K.
Published in Journal of magnetism and magnetic materials (01.02.2002)
Published in Journal of magnetism and magnetic materials (01.02.2002)
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