Mid-wavelength infrared p-on-n Hg1-xCdxTe heterostructure detectors: 30-120 kelvin state-of-the-art performance
ZANDIAN, Majid, GARNETT, J. D, ARIAS, J. M, VURAL, K, HALL, Donald N. B, DEWAMES, R. E, CARMODY, M, PASKO, J. G, FARRIS, M, CABELLI, C. A, COOPER, D. E, HILDEBRANDT, G, CHOW, J
Published in Journal of electronic materials (01.07.2003)
Published in Journal of electronic materials (01.07.2003)
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Numerical simulation of HgCdTe detector characteristics
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1/f noise in large-area Hg1-xCdxTe photodiodes
D'SOUZA, A. I, STAPELBROEK, M. G, DOLAN, P. N, WIJEWARNASURIYA, P. S, DEWAMES, R. E, SMITH, D. S, EHLERT, J. C
Published in Journal of electronic materials (01.07.2003)
Published in Journal of electronic materials (01.07.2003)
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Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote-sensing applications
WIJEWARNASURIYA, P. S, ZANDIAN, M, PHILLIPS, J, EDWALL, D, DEWAMES, R. E, HILDEBRANDT, G, BAJAJ, J, ARIAS, J. M, D'SOUZA, A. I, MOORE, F
Published in Journal of electronic materials (01.07.2002)
Published in Journal of electronic materials (01.07.2002)
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LWIR 128x128 GaAs/AlGaAs multiple quantum well hybrid focal plane array
Kozlowski, L J, Williams, G M, Sullivan, G J, Farley, C W, Anderson, R J, Chen, J, Cheung, D T, Tennant, W E, DeWames, R E
Published in IEEE transactions on electron devices (01.05.1991)
Published in IEEE transactions on electron devices (01.05.1991)
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1/f noise in very-long-wavelength infrared Hg1-xCdxTe detectors
D'SOUZA, A. I, STAPELBROEK, M. G, WIJEWARNASURIYA, P. S, DEWAMES, R. E, WILLIAMS, G. M
Published in Journal of electronic materials (01.07.2002)
Published in Journal of electronic materials (01.07.2002)
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Current mechanisms in VLWIR Hg1-xCdxTe photodiodes
D'SOUZA, A. I, DEWAMES, R. E, WIJEWARNASURIYA, P. S, HILDEBRANDT, G, ARIAS, J. M
Published in Journal of electronic materials (01.06.2001)
Published in Journal of electronic materials (01.06.2001)
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Large VLWIR Hg1−xCdxTe photovoltaic detectors
D’Souza, A. I., Dawson, L. C., Staller, C., Wijewarnasuriya, P. S., Dewames, R. E., Mclevige, W. V., Arias, J. M., Edwall, D., Hildebrandt, G.
Published in Journal of electronic materials (01.06.2000)
Published in Journal of electronic materials (01.06.2000)
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Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing
Edwall, D. D., DeWames, R. E., McLevige, W. V., Pasko, J. G., Arias, J. M.
Published in Journal of electronic materials (01.06.1998)
Published in Journal of electronic materials (01.06.1998)
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Molecular beam epitaxial HgCdTe material characteristics and device performance : reproducibility status
BAJAJ, J, ARIAS, J. M, ZANDIAN, M, PASKO, J. G, KOZLOWSKI, L. J, DE WAMES, R. E, TENNANT, W. E
Published in Journal of electronic materials (01.09.1995)
Published in Journal of electronic materials (01.09.1995)
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Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors
D’Souza, A. I., Wijewarnasuriya, P. S., Dewames, R. E., Hildebrandt, G., Bajaj, J., Edwall, D. D., Pasko, J. G., Arias, J. M.
Published in Journal of electronic materials (01.06.1999)
Published in Journal of electronic materials (01.06.1999)
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Dark current generating mechanisms in short wavelength infrared photovoltaic detectors
Dewames, R. E., Edwall, D. D., Zandian, M., Bubulac, L. O., Pasko, J. G., Tennant, W. E., Arias, J. M., D’Souza, A.
Published in Journal of electronic materials (01.06.1998)
Published in Journal of electronic materials (01.06.1998)
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Origin of void defects in Hg1-xCdxTe grown by molecular beam epitaxy
ZANDIAN, M, ARIAS, J. M, BAJAJ, J, PASKO, J. G, BUBULAC, L. O, DEWAMES, R. E
Published in Journal of electronic materials (01.09.1995)
Published in Journal of electronic materials (01.09.1995)
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MBE HgCdTe heterostructure p-on-n planar infrared photodiodes
ARIAS, J. M, PASKO, J. G, ZANDIAN, M, SHIN, S. H, WILLIAMS, G. M, BUBULAC, L. O, DE WAMES, R. E, TENNANT, W. E
Published in Journal of electronic materials (01.08.1993)
Published in Journal of electronic materials (01.08.1993)
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High performance SWIR HgCdTe detector arrays
Bubulac, L. O., Tennant, W. E., Pasko, J. G., Kozlowski, L. J., Zandian, M., Motamedi, M. E., De Wames, R. E., Bajaj, J., Nayar, N., McLevige, W. V., Gluck, N. S., Melendes, R., Cooper, D. E., Edwall, D. D., Arias, J. M., Hall, R., D’souza, A. I.
Published in Journal of electronic materials (01.06.1997)
Published in Journal of electronic materials (01.06.1997)
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Molecular beam epitaxy HgCdTe growth-induced void defects and their effect on infrared photodiodes
ARIAS, J. M, ZANDIAN, M, BAJAJ, J, PASKO, J. G, BUBULAC, L. O, SHIN, S. H, DE WAMES, R. E
Published in Journal of electronic materials (01.05.1995)
Published in Journal of electronic materials (01.05.1995)
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Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTe
SHIN, S. H, ARIAS, J. M, ZANDIAN, M, PASKO, J. G, BUBULAC, L. O, DE WAMES, R. E
Published in Journal of electronic materials (01.08.1993)
Published in Journal of electronic materials (01.08.1993)
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Photoinduced excess low-frequency noise in HgCdTe photodiodes
Williams, G M, De Wames, R E, Bajaj, J, Blazejewski, E R
Published in Journal of electronic materials (01.08.1993)
Published in Journal of electronic materials (01.08.1993)
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Enhanced arsenic diffusion and activation in HgCdTe
SHIN, S. H, ARIAS, J. M, ZANDIAN, M, PASKO, J. G, BUBULAC, L. O, DE WAMES, R. E
Published in Journal of electronic materials (01.05.1995)
Published in Journal of electronic materials (01.05.1995)
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