Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials
Jallipalli, A., Balakrishnan, G., Huang, S.H., Khoshakhlagh, A., Dawson, L.R., Huffaker, D.L.
Published in Journal of crystal growth (01.05.2007)
Published in Journal of crystal growth (01.05.2007)
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Journal Article
Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors
Plis, E., Kutty, M.N., Myers, S., Kim, H.S., Gautam, N., Dawson, L.R., Krishna, S.
Published in Infrared physics & technology (01.05.2011)
Published in Infrared physics & technology (01.05.2011)
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Journal Article
Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates
Tatebayashi, J., Jallipalli, A., Kutty, M.N., Shenghong Huang, Nunna, K., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.
Published in IEEE journal of selected topics in quantum electronics (01.05.2009)
Published in IEEE journal of selected topics in quantum electronics (01.05.2009)
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Journal Article
Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode
Tatebayashi, J., Baolai Liang, Bussian, D.A., Htoon, H., Shenghong Huang, Balakrishnan, G., Klimov, V., Dawson, L.R., Huffaker, D.L.
Published in IEEE transactions on nanotechnology (01.03.2009)
Published in IEEE transactions on nanotechnology (01.03.2009)
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Journal Article
Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate
BALAKRISHNAN, G, HUANG, S. H, KHOSHAKHLAGH, A, JALLIPALLI, A, ROTELLA, P, AMTOUT, A, KRISHNA, S, HAINES, C. P, DAWSON, L. R, HUFFAKER, D. L
Published in Electronics letters (16.03.2006)
Published in Electronics letters (16.03.2006)
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Journal Article
Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications
Addamane, S.J., Mansoori, A., Renteria, E.J., Dawson, N., Shima, D.M., Rotter, T.J., Hains, C.P., Dawson, L.R., Balakrishnan, G.
Published in Journal of crystal growth (01.04.2016)
Published in Journal of crystal growth (01.04.2016)
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Journal Article
Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection
Khoshakhlagh, A., Plis, E., Myers, S., Sharma, Y.D., Dawson, L.R., Krishna, S.
Published in Journal of crystal growth (15.03.2009)
Published in Journal of crystal growth (15.03.2009)
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Journal Article
Conference Proceeding
Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy
Romero, O.S., Aragon, A.A., Rahimi, N., Shima, D., Addamane, S., Rotter, T.J., Mukherjee, S. D., Dawson, L.R., Lester, L.F., Balakrishnan, G.
Published in Journal of electronic materials (01.04.2014)
Published in Journal of electronic materials (01.04.2014)
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Journal Article
Conference Proceeding
Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors
Kurtz, S.R., Dawson, L.R., Biefeld, R.M., Fritz, I.J., Zipperian, T.E.
Published in IEEE electron device letters (01.04.1989)
Published in IEEE electron device letters (01.04.1989)
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Journal Article
Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate
Balakrishnan, G., Jallipalli, A., Rotella, P., Shenghong Huang, Khoshakhlagh, A., Amtout, A., Krishna, S., Dawson, L.R., Huffaker, D.L.
Published in IEEE journal of selected topics in quantum electronics (01.11.2006)
Published in IEEE journal of selected topics in quantum electronics (01.11.2006)
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Journal Article
Room-Temperature Operation of Buffer-Free GaSb-AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 \mum
Mehta, M., Jallipalli, A., Tatebayashi, J., Kutty, M.N., Albrecht, A., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.
Published in IEEE photonics technology letters (15.10.2007)
Published in IEEE photonics technology letters (15.10.2007)
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Journal Article
Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection
Gautam, N., Kim, H.S., Myers, S., Plis, E., Kutty, M.N., Naydenkov, Mikhail, Klein, B., Dawson, L.R., Krishna, S.
Published in Infrared physics & technology (01.05.2011)
Published in Infrared physics & technology (01.05.2011)
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Journal Article
1.54 [micro sign]m GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays
Jallipalli, A., Kutty, M.N., Balakrishnan, G., Tatebayashi, J., Nuntawong, N., Huang, S.H., Dawson, L.R., Huffaker, D.L., Mi, Z., Bhattacharya, P.
Published in Electronics letters (2007)
Published in Electronics letters (2007)
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Journal Article
Room-Temperature Operation of Buffer-Free GaSb-AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 [mu]m
Mehta, M, Jallipalli, A, Tatebayashi, J, Kutty, M.N, Albrecht, A, Balakrishnan, G, Dawson, L.R, Huffaker, D.L
Published in IEEE photonics technology letters (15.10.2007)
Published in IEEE photonics technology letters (15.10.2007)
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Journal Article
Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates
BALAKRISHNAN, G, MEHTA, M, KUTTY, M. N, PATEL, P, ALBRECHT, A. R, ROTELLA, P, KRISHNA, S, DAWSON, L. R, HUFFAKER, D. L
Published in Electronics letters (15.02.2007)
Published in Electronics letters (15.02.2007)
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Journal Article
Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array
Tatebayashi, J., Jallipalli, A., Kutty, M.N., Huang, S.H., Rotter, T.J., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.
Published in Journal of electronic materials (01.12.2008)
Published in Journal of electronic materials (01.12.2008)
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Journal Article
Multiple-wavelength emission from In/sub x/Ga/sub 1-x/As-GaAs quantum wells grown on a nanoscale faceted GaAs substrate by molecular beam epitaxy
Lee, S.C., Dawson, L.R., Malloy, K.J., Brueck, S.R.J.
Published in IEEE journal of selected topics in quantum electronics (01.09.2002)
Published in IEEE journal of selected topics in quantum electronics (01.09.2002)
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Journal Article
Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate
BALAKRISHNAN, G, HUANG, S. H, KHOSHAKHLAGH, A, HILL, P, AMTOUT, A, KRISHNA, S, DONATI, G. P, DAWSON, L. R, HUFFAKER, D. L
Published in Electronics letters (28.04.2005)
Published in Electronics letters (28.04.2005)
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Journal Article