The investigation of properties of electron transport in AlGaN/GaN heterostructures
Danylyuk, S.V., Vitusevich, S.A., Podor, B., Belyaev, A.E., Avksentyev, A.Yu, Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.
Published in Microelectronics (01.05.2003)
Published in Microelectronics (01.05.2003)
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Journal Article
Aluminium nitride–niobium multilayers and free-standing structures for MEMS
Danylyuk, S.V., Ott, R., Panaitov, G., Pickartz, G., Hollmann, E., Vitusevich, S.A., Belyaev, A.E., Klein, N.
Published in Thin solid films (25.10.2006)
Published in Thin solid films (25.10.2006)
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Journal Article
Conference Proceeding
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
Vitusevich, S A, Petrychuk, M V, Kurakin, A M, Danylyuk, S V, Mayer, D, Bougrioua, Z, Naumov, A V, Belyaev, A E, Klein, N
Published in Journal of statistical mechanics (01.01.2009)
Published in Journal of statistical mechanics (01.01.2009)
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Journal Article
Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structures
Vitusevich, S.A., Danylyuk, S.V., Petrychuk, M.V., Antoniuk, O.A., Klein, N., Belyaev, A.E.
Published in Applied surface science (15.11.2004)
Published in Applied surface science (15.11.2004)
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Journal Article
Conference Proceeding
Resonance and current instabilities in AlN/GaN resonant tunnelling diodes
Belyaev, A.E, Makarovsky, O, Walker, D.J, Eaves, L, Foxon, C.T, Novikov, S.V, Zhao, L.X, Dykeman, R.I, Danylyuk, S.V, Vitusevich, S.A, Kappers, M.J, Barnard, J.S, Humphreys, C.J
Published in Physica. E, Low-dimensional systems & nanostructures (01.03.2004)
Published in Physica. E, Low-dimensional systems & nanostructures (01.03.2004)
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Journal Article
Resonant tunneling effect in a periodically modulated electrical field
Vitusevich, S.A, Förster, A, Belyaev, A.E, Sheka, D.I, Lüth, H, Klein, N, Danylyuk, S.V, Konakova, R.V
Published in Physica. E, Low-dimensional systems & nanostructures (01.03.2002)
Published in Physica. E, Low-dimensional systems & nanostructures (01.03.2002)
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Journal Article
Low-Frequency Noise in AlGaN/GaN High Electron Mobility Transistors Irradiated by γ-Ray Quanta
Vitusevich, S.A., Klein, N., Petrychuk, M.V., Belyaev, A.E., Danylyuk, S.V., Konakova, R.V., Avksentyev, A.Yu, Danilchenko, B.A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.
Published in Physica status solidi. C (2003)
Published in Physica status solidi. C (2003)
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Journal Article
Two-Dimensional Electron Dynamics in GaN/AlGaN Heterostructures
Vitusevich, S.A., Danylyuk, S.V., Klein, N., Petrychuk, M.V., Avksentyev, A.Yu, Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.
Published in Physica status solidi. C (2003)
Published in Physica status solidi. C (2003)
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Journal Article
Ultra-high electric field transport in GaN-based heterostructures
Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Budnik, A.P., Avksentyev, A.Yu, Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.
Published in International Semiconductor Device Research Symposium, 2003 (2003)
Published in International Semiconductor Device Research Symposium, 2003 (2003)
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Conference Proceeding
Low frequency noise parameters in an AlGaN/GaN heterostructure with 33% and 75% Al mole fraction
Vitusevich, S.A., Danylyuk, S.V., Klein, N., Petrychuk, M.V., Belyaev, A.E., Vertiatchikh, A., Eastman, L.F.
Published in Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004 (2004)
Published in Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004 (2004)
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Conference Proceeding
The effect of gamma-irradiation on the operating parameters of group III nitrides-based field effect transistors
Belyaev, A.E., Konakova, R.V., Petrychuk, M.V., Avksentyev, A.Yu, Kurakin, A.M., Vitusevich, S.A., Klein, N., Danylyuk, S.V., Danylchenko, B.A.
Published in 12th International Conference Microwave and Telecommunication Technology (2002)
Published in 12th International Conference Microwave and Telecommunication Technology (2002)
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Conference Proceeding