Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide
Okhapkin, A. I., Kraev, S. A., Arkhipova, E. A., Daniltsev, V. M., Khrykin, O. I., Yunin, P. A., Drozdov, M. N.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2021)
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Journal Article
Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates
Drozdov, Yu. N., Kraev, S. A., Okhapkin, A. I., Daniltsev, V. M., Skorokhodov, E. V.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2020)
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Journal Article
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
Daniltsev, V. M., Demidov, E. V., Drozdov, M. N., Drozdov, Yu. N., Kraev, S. A., Surovegina, E. A., Shashkin, V. I., Yunin, P. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2016)
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Investigation of X-ray diffraction limitations upon the analysis of tellurium-atom injection into GaAs epitaxial layers
Drozdov, Yu. N., Danil’tsev, V. M., Drozdov, M. N., Yunin, P. A., Demidov, E. V., Folomin, P. I., Gritsenko, A. B., Korolev, S. A., Surovegina, E. A.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.03.2017)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.03.2017)
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Journal Article
Novel technique for monitoring of MOVPE processes
Volkov, P.V., Goryunov, A.V., Daniltsev, V.M., Luk’yanov, A.Yu, Pryakhin, D.A., Tertyshnik, A.D., Khrykin, O.I., Shashkin, V.I.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
A nanomechanical system with piezoelectric actuation of a GaAs microbeam
Vopilkin, E A, Shashkin, V I, Drozdov, Y N, Daniltsev, V M, Gusev, S A, Shuleshova, I Yu
Published in Journal of micromechanics and microengineering (01.09.2008)
Published in Journal of micromechanics and microengineering (01.09.2008)
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Journal Article
Fabrication and characterization of stress-free microbeams for MEMS applications
Shashkin, V. I., Vostokov, N. V., Vopilkin, E. A., Klimov, A. Yu, Daniltsev, V. M., Rogov, V. V., Lazarev, S. G.
Published in Physica status solidi. C (01.01.2005)
Published in Physica status solidi. C (01.01.2005)
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Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling
Drozdov, M. N., Vostokov, N. V., Danil’tsev, V. M., Demidov, E. V., Drozdov, Yu. N., Khrykin, O. I., Shashkin, V. I.
Published in Bulletin of the Russian Academy of Sciences. Physics (01.02.2012)
Published in Bulletin of the Russian Academy of Sciences. Physics (01.02.2012)
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Recharging dynamics of Al Nanoclusters in a GaAs matrix
Vostokov, N. V., Danil’tsev, V. M., Shashkin, V. I.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.07.2012)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.07.2012)
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Journal Article
InGaAsN/GaAs QD and QW structures grown by MOVPE
Daniltsev, V.M., Drozdov, M.N., Drozdov, Yu.N., Gaponova, D.M., Khrykin, O.I., Murel, A.V., Shashkin, V.I., Vostokov, N.V.
Published in Journal of crystal growth (01.02.2003)
Published in Journal of crystal growth (01.02.2003)
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Journal Article
Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD
Moldavskaya, L.D., Shashkin, V.I., Drozdov, M.N., Drozdov, Yu.N., Daniltsev, V.M., Murel, A.V., Andreev, B.A., Yablonsky, A.N., Gusev, S.A., Gaponova, D.M., Khrykin, O.I., Luk'yanov, A.Yu, Sadova, E.N.
Published in Physica. E, Low-dimensional systems & nanostructures (01.04.2003)
Published in Physica. E, Low-dimensional systems & nanostructures (01.04.2003)
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Journal Article
Inter-well transitions and negative magnetoresistance in double-quantum-well heterostructures
Minkov, G M, Germanenko, A V, Rut, O E, Khrykin, O I, Shashkin, V I, Danil'tsev, V M
Published in Nanotechnology (01.12.2000)
Published in Nanotechnology (01.12.2000)
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Journal Article
Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
Yurasov, D. V., Bobrov, A. I., Daniltsev, V. M., Novikov, A. V., Pavlov, D. A., Skorokhodov, E. V., Shaleev, M. V., Yunin, P. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2015)
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Journal Article
Infrared Lateral Photoconductivity of InGaAs Quantum Dots: the Temperature Dependence
Moldavskaya, L.D., Shashkin, V.I., Drozdov, M.N., Daniltsev, V.M., Antonov, A.V., Yablonsky, A.N.
Published in Acta physica Polonica, A (01.06.2003)
Published in Acta physica Polonica, A (01.06.2003)
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