Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0-1.6 mu m operation
Fuji, H.S., Ray, S., Williams, T.J., Griem, H.T., Harrang, J.P., Daniels, R.R., LaGasse, M.J., West, D.L.
Published in IEEE journal of quantum electronics (01.03.1991)
Published in IEEE journal of quantum electronics (01.03.1991)
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Journal Article
Nature of the band discontinuities at semiconductor heterojunction interfaces
Margaritondo, G., Katnani, A.D., Stoffel, N.G., Daniels, R.R., Zhao, Te-Xiu
Published in Solid state communications (01.01.1982)
Published in Solid state communications (01.01.1982)
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Journal Article
New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation
Shur, M.S., Arch, D.K., Daniels, R.R., Abrokwah, J.K.
Published in IEEE electron device letters (01.02.1986)
Published in IEEE electron device letters (01.02.1986)
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Journal Article
A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach
Daniels, R.R., Yang, A.T., Harrang, J.P.
Published in IEEE transactions on electron devices (01.10.1993)
Published in IEEE transactions on electron devices (01.10.1993)
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Journal Article
Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors
Ruden, P.P., Shur, M., Arch, D.K., Daniels, R.R., Grider, D.E., Nohava, T.E.
Published in IEEE transactions on electron devices (01.11.1989)
Published in IEEE transactions on electron devices (01.11.1989)
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Journal Article
Resonant-photoemission identification of the valence states of NiPS 3
Kelly, M.K., Daniels, R.R., Margaritondo, G., Lévy, F.
Published in Solid state communications (1984)
Published in Solid state communications (1984)
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Journal Article
New mechanism of gate current in heterostructure insulated gate field-effect transistors
Jun Ho Baek, Shur, M., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.
Published in IEEE electron device letters (01.09.1986)
Published in IEEE electron device letters (01.09.1986)
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Journal Article
IIA-6 modulation-doped field-effect transistors utilizing superlattice AlGaAs/n+-GaAs charge-control layers
Arch, D.K., Abrokwah, J.K., Vold, P.J., Fraasch, A.M., Daniels, R.R., Cirillo, N.C., Shur, M.S., Xu, J.
Published in IEEE transactions on electron devices (01.11.1986)
Published in IEEE transactions on electron devices (01.11.1986)
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Journal Article
GaSeGe: A “Schottky-like” heterojunction
Daniels, R.R., Margaritondo, G., Quaresima, C., Capozi, M., Perfetti, P., Lévy, F.
Published in Solid state communications (01.01.1984)
Published in Solid state communications (01.01.1984)
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Journal Article
Resonant-photoemission identification of the valence states of NiPS3
KELLY, M. K, DANIELS, R. R, MARGARITONDO, G, LEVY, F
Published in Solid state communications (01.01.1984)
Published in Solid state communications (01.01.1984)
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Journal Article
Modeling and simulation of higb-frequency integrated circuits based on scattering parameters
Yang, A.T., Chan, C.H., Yao, J.T., Daniels, R.R., Harrang, J.P.
Published in 28th ACM/IEEE Design Automation Conference (1991)
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Published in 28th ACM/IEEE Design Automation Conference (1991)
Conference Proceeding
An efficient non-quasi-static diode model for circuit simulation
Yang, Andrew T., Liu, Yu, Yao, Jack T., Daniels, R. R.
Published in 30th ACM/IEEE Design Automation Conference (01.07.1993)
Published in 30th ACM/IEEE Design Automation Conference (01.07.1993)
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Conference Proceeding