Full InGaN red light emitting diodes
Dussaigne, A., Barbier, F., Damilano, B., Chenot, S., Grenier, A., Papon, A. M., Samuel, B., Ben Bakir, B., Vaufrey, D., Pillet, J. C., Gasse, A., Ledoux, O., Rozhavskaya, M., Sotta, D.
Published in Journal of applied physics (07.10.2020)
Published in Journal of applied physics (07.10.2020)
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Journal Article
Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes
Fan Arcara, V., Damilano, B., Feuillet, G., Vézian, S., Ayadi, K., Chenot, S., Duboz, J.-Y.
Published in Journal of applied physics (14.12.2019)
Published in Journal of applied physics (14.12.2019)
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Journal Article
Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y
Damilano, B, Vézian, S, Brault, J, Ruterana, P, Gil, B, Tchernycheva, M
Published in Nanotechnology (28.03.2023)
Published in Nanotechnology (28.03.2023)
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Journal Article
InGaN islands and thin films grown on epitaxial graphene
Paillet, C, Vézian, S, Matei, C, Michon, A, Damilano, B, Dussaigne, A, Hyot, B
Published in Nanotechnology (02.10.2020)
Published in Nanotechnology (02.10.2020)
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Journal Article
Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions
Gromovyi, M., Bhat, N., Tronche, H., Baldi, P., Kurdi, M. EL, Checoury, X., Damilano, B., Boucaud, P.
Published in Optics express (11.09.2023)
Published in Optics express (11.09.2023)
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Journal Article
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion
Damilano, B., Aristégui, R., Teisseyre, H., Vézian, S., Guigoz, V., Courville, A., Florea, I., Vennéguès, P., Bockowski, M., Guillet, T., Vladimirova, M.
Published in Journal of applied physics (07.03.2024)
Published in Journal of applied physics (07.03.2024)
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Journal Article
Bandwidth-unlimited polarization-maintaining metasurfaces
Song, Q, Khadir, S, Vézian, S, Damilano, B, Mierry, P D, Chenot, S, Brandli, V, Genevet, P
Published in Science advances (29.01.2021)
Published in Science advances (29.01.2021)
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Journal Article
Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence
Damilano, B., Vézian, S., Chauvat, M. P., Ruterana, P., Amador-Mendez, N., Collin, S., Tchernycheva, M., Valvin, P., Gil, B.
Published in Journal of applied physics (21.07.2022)
Published in Journal of applied physics (21.07.2022)
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Journal Article
Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization
Cooper, D., Fan Arcara, V., Damilano, B., Amichi, L., Mavel, A., Rochat, N., Feuillet, G., Courville, A., Vézian, S., Duboz, J. Y.
Published in Journal of applied physics (14.07.2021)
Published in Journal of applied physics (14.07.2021)
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Journal Article
Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
Brault, J., Matta, S., Ngo, T.-H., Al Khalfioui, M., Valvin, P., Leroux, M., Damilano, B., Korytov, M., Brändli, V., Vennéguès, P., Massies, J., Gil, B.
Published in Journal of applied physics (28.11.2019)
Published in Journal of applied physics (28.11.2019)
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Journal Article
Whispering-gallery mode InGaN microdisks on GaN substrates
Zi, H., Fu, W. Y., Tabataba-Vakili, F., Kim-Chauveau, H., Frayssinet, E., De Mierry, P., Damilano, B., Duboz, J- Y., Boucaud, Ph, Semond, F., Choi, H. W.
Published in Optics express (05.07.2021)
Published in Optics express (05.07.2021)
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Journal Article
On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations
Vennéguès, P., Largeau, L., Brändli, V., Damilano, B., Tavernier, K., Bernard, R., Courville, A., Rennesson, S., Semond, F., Feuillet, G., Cornet, C.
Published in Journal of applied physics (28.10.2022)
Published in Journal of applied physics (28.10.2022)
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Journal Article
High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials
Konczewicz, L., Juillaguet, S., Litwin-Staszewska, E., Piotrzkowski, R., Peyre, H., Matta, S., Al Khalfioui, M., Leroux, M., Damilano, B., Brault, J., Contreras, S.
Published in Journal of applied physics (28.08.2020)
Published in Journal of applied physics (28.08.2020)
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Journal Article
First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor
Mhedhbi, S., Lesecq, M., Altuntas, P., Defrance, N., Okada, E., Cordier, Y., Damilano, B., Tabares-Jimenez, G., Ebongue, A., Hoel, V.
Published in IEEE electron device letters (01.05.2016)
Published in IEEE electron device letters (01.05.2016)
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Journal Article
Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
Brault, J., Damilano, B., Kahouli, A., Chenot, S., Leroux, M., Vinter, B., Massies, J.
Published in Journal of crystal growth (15.01.2013)
Published in Journal of crystal growth (15.01.2013)
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Journal Article
Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
Di Russo, E, Mavel, A, Fan Arcara, V, Damilano, B, Dimkou, I, Vézian, S, Grenier, A, Veillerot, M, Rochat, N, Feuillet, G, Bonef, B, Rigutti, L, Duboz, J-Y, Monroy, E, Cooper, D
Published in Nanotechnology (13.11.2020)
Published in Nanotechnology (13.11.2020)
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Journal Article
III-nitride on silicon electrically injected microrings for nanophotonic circuits
Tabataba-Vakili, F, Rennesson, S, Damilano, B, Frayssinet, E, Duboz, J-Y, Semond, F, Roland, I, Paulillo, B, Colombelli, R, Kurdi, M El, Checoury, X, Sauvage, S, Doyennette, L, Brimont, C, Guillet, T, Gayral, B, Boucaud, P
Published in Optics express (15.04.2019)
Published in Optics express (15.04.2019)
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Journal Article