Search Results - "Daewon Ha" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Analog reservoir computing via ferroelectric mixed phase boundary transistors

Analog reservoir computing via ferroelectric mixed phase boundary transistors

by Kim, Jangsaeng, Park, Eun Chan, Shin, Wonjun, Koo, Ryun-Han, Han, Chang-Hyeon, Kang, He Young, Yang, Tae Gyu, Goh, Youngin, Lee, Kilho, Ha, Daewon, Cheema, Suraj S., Jeong, Jae Kyeong, Kwon, Daewoong
Published in Nature communications (23.10.2024)

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Journal Article

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

by Kim, Donguk, Kim, Je-Hyuk, Choi, Woo Sik, Yang, Tae Jun, Jang, Jun Tae, Belmonte, Attilio, Rassoul, Nouredine, Subhechha, Subhali, Delhougne, Romain, Kar, Gouri Sankar, Lee, Wonsok, Cho, Min Hee, Ha, Daewon, Kim, Dae Hwan
Published in Scientific reports (12.11.2022)

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Journal Article

Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications

Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications

by Daewon Ha, Yang, C., Lee, J., Lee, S., Lee, S. H., Seo, K.-I, Oh, H. S., Hwang, E. C., Do, S. W., Park, S. C., Sun, M.-C, Kim, D. H., Lee, J. H., Kang, M. I., Ha, S.-S, Choi, D. Y., Jun, H., Shin, H. J., Kim, Y. J., Moon, C. W., Cho, Y. W., Park, S. H., Son, Y., Park, J. Y., Lee, B. C., Kim, C., Oh, Y. M., Park, J. S., Kim, S. S., Kim, M. C., Hwang, K. H., Nam, S. W., Maeda, S., Kim, D.-W, Lee, J.-H, Liang, M. S., Jung, E. S.
Published in 2017 Symposium on VLSI Technology (01.06.2017)

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Conference Proceeding

Extremely scaled silicon nano-CMOS devices

Extremely scaled silicon nano-CMOS devices

by Chang, L., Yang-kyu Choi, Ha, D., Ranade, P., Shiying Xiong, Bokor, J., Chenming Hu, King, T.J.
Published in Proceedings of the IEEE (01.11.2003)

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Journal Article

Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs

Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs

by Daewon Ha, Takeuchi, H., Yang-Kyu Choi, Tsu-Jae King
Published in IEEE transactions on electron devices (01.12.2004)

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Journal Article

Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs

Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs

by Choi, Yang-Kyu, Ha, Daewon, King, Tsu-Jae, Bokor, Jeffrey
Published in Japanese Journal of Applied Physics (2003)

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Journal Article

Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

by Jeong-Soo Lee, Yang-Kyu Choi, Daewon Ha, Balasubramanian, S., Tsu-Jae King, Bokor, J.
Published in IEEE electron device letters (01.03.2003)

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Journal Article

Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

by Kim, Taikyu, Choi, Cheol Hee, Hur, Jae Seok, Ha, Daewon, Kuh, Bong Jin, Kim, Yongsung, Cho, Min Hee, Kim, Sangwook, Jeong, Jae Kyeong
Published in Advanced materials (Weinheim) (01.10.2023)

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Journal Article

Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain

Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain

by Choi, Yang-Kyu, Ha, Daewon, King, Tsu-Jae, Hu, Chenming
Published in IEEE electron device letters (01.09.2001)

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Journal Article

Design Guidelines of Multibridge Channel-Ferroelectric FET for 3-nm Node and Beyond

Design Guidelines of Multibridge Channel-Ferroelectric FET for 3-nm Node and Beyond

by Lee, Kynghwan, Hong, Jungpyo, Kuh, Bong Jin, Ha, Daewon, Hyun, Sangjin, Ahn, Sujin, Song, Jaihyuk
Published in IEEE transactions on electron devices (01.11.2024)

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Journal Article

A Comprehensive Study of Transient Characteristics in FeFET Using In-Situ V t Measurement Method

A Comprehensive Study of Transient Characteristics in FeFET Using In-Situ V t Measurement Method

by Myeong, Ilho, Kim, Hyoseok, Kim, Wanki, Ha, Daewon, Ahn, Sujin, Song, Jaihyuk
Published in IEEE electron device letters (01.08.2024)

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Journal Article

A Comprehensive Study of Transient Characteristics in FeFET Using In-Situ Vt Measurement Method

A Comprehensive Study of Transient Characteristics in FeFET Using In-Situ Vt Measurement Method

by Myeong, Ilho, Kim, Hyoseok, Kim, Wanki, Ha, Daewon, Ahn, Sujin, Song, Jaihyuk
Published in IEEE electron device letters (01.08.2024)

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Journal Article

Prospective Innovation of DRAM, Flash, and Logic Technologies for Digital Transformation (DX) Era

Prospective Innovation of DRAM, Flash, and Logic Technologies for Digital Transformation (DX) Era

by Ha, Daewon, Kim, Hyoung-Sub
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)

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Conference Proceeding

Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics

Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics

by Park, Ju Yong, Choe, Duk-Hyun, Lee, Dong Hyun, Yu, Geun Taek, Yang, Kun, Kim, Se Hyun, Park, Geun Hyeong, Nam, Seung-Geol, Lee, Hyun Jae, Jo, Sanghyun, Kuh, Bong Jin, Ha, Daewon, Kim, Yongsung, Heo, Jinseong, Park, Min Hyuk
Published in Advanced materials (Weinheim) (01.10.2023)

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Journal Article

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2

by Qin, Yixin, Zhao, Zijian, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Ni, Kai
Published in IEEE transactions on electron devices (01.08.2024)

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Journal Article

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO 2

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO 2

by Qin, Yixin, Zhao, Zijian, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Ni, Kai
Published in IEEE transactions on electron devices (01.08.2024)

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Journal Article

Strategies for a Wide Memory Window of Ferroelectric FET for Multilevel Ferroelectric VNAND Operation

Strategies for a Wide Memory Window of Ferroelectric FET for Multilevel Ferroelectric VNAND Operation

by Myeong, Ilho, Kim, Hyoseok, Kim, Seunghyun, Lim, Suhwan, Kim, Kwangsu, Kim, Wanki, Ha, Daewon, Ahn, Sujin, Song, Jaihyuk
Published in IEEE electron device letters (01.07.2024)

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Journal Article

Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

by Ha, Daewon, Cho, Changhyun, Shin, Dongwon, Koh, Gwan-Hyeob, Chung, Tae-Young, Kim, Kinam
Published in IEEE transactions on electron devices (01.05.1999)

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Journal Article

A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping

A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping

by Zhao, Zijian, Qin, Yixin, Duan, Jiahui, Lee, YuShan, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Ni, Kai
Published in IEEE electron device letters (09.10.2024)

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Journal Article

MEMORY DEVICE AND OPERTING METHOD THEREOF

MEMORY DEVICE AND OPERTING METHOD THEREOF

by KWANGSOO KIM, SUHWAN LIM, DAEWON HA, TAEYOUNG KIM
Year of Publication 30.07.2024

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Patent

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