Experimental Study of Gate-First FinFET Threshold-Voltage Mismatch
Qintao Zhang, Wang, Cindy, Hailing Wang, Schnabel, Christopher, Dae-Gyu Park, Springer, Scott K., Leobandung, Effendi
Published in IEEE transactions on electron devices (01.02.2014)
Published in IEEE transactions on electron devices (01.02.2014)
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Journal Article
CMOS-Compatible Self-Aligned In0.53Ga0.47As MOSFETs With Gate Lengths Down to 30 nm
Majumdar, Amlan, Yanning Sun, Cheng-Wei Cheng, Young-Hee Kim, Rana, Uzma, Martin, Ryan M., Bruce, Robert L., Kuen-Ting Shiu, Yu Zhu, Farmer, Damon B., Hopstaken, Marinus, Joseph, Eric A., de Souza, Joel P., Frank, Martin M., Szu-Lin Cheng, Kobayashi, Masaharu, Duch, Elizabeth A., Sadana, Devendra K., Dae-Gyu Park, Leobandung, Effendi
Published in IEEE transactions on electron devices (01.10.2014)
Published in IEEE transactions on electron devices (01.10.2014)
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Journal Article
Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
Hashemi, Pouya, Kam-Leung Lee, Ando, Takashi, Balakrishnan, Karthik, Ott, John A., Koswatta, Syuranga, Engelmann, Sebastian U., Dae-Gyu Park, Narayanan, Vijay, Mo, Renee T., Leobandung, Effendi
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
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Conference Proceeding
On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors
Jin Cai, Ning, Tak H., D'Emic, Christopher P., Jeng-Bang Yau, Chan, Kevin K., Joonah Yoon, Muralidhar, Ramachandran, Dae-Gyu Park
Published in IEEE journal of the Electron Devices Society (01.09.2014)
Published in IEEE journal of the Electron Devices Society (01.09.2014)
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Journal Article
A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices
Muralidhar, R., Jin Cai, Lauer, I., Chan, K., Kulkarni, P., Young-Hee Kim, Zhibin Ren, Dae-Gyu Park, Oldiges, P., Shahidi, G.
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor
Park, Dae-Gyu, Cho, Heung-Jae, Lim, Kwan-Yong, Lim, Chan, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won
Published in Journal of applied physics (01.06.2001)
Published in Journal of applied physics (01.06.2001)
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Journal Article
High- \kappa/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length
Khater, M.H., Zhen Zhang, Jin Cai, Lavoie, C., D'Emic, C., Qingyun Yang, Bin Yang, Guillorn, M., Klaus, D., Ott, J.A., Yu Zhu, Ying Zhang, Changhwan Choi, Frank, M.M., Kam-Leung Lee, Narayanan, V., Dae-Gyu Park, Qiqing Ouyang, Haensch, W.
Published in IEEE electron device letters (01.04.2010)
Published in IEEE electron device letters (01.04.2010)
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Journal Article
Electrical characteristics and thermal stability of n+ polycrystalline- Si/ZrO2/SiO2/Si metal–oxide–semiconductor capacitors
Lim, Kwan-Yong, Park, Dae-Gyu, Cho, Heung-Jae, Kim, Joong-Jung, Yang, Jun-Mo, Choi, II-Sang, Yeo, In-Seok, Park, Jin Won
Published in Journal of applied physics (01.01.2002)
Published in Journal of applied physics (01.01.2002)
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Journal Article
Plasma Post-Oxidation for High Mobility Strained-Ge pFETs with Aggressively Scaled High-κ Dielectrics
Chern, Winston, Hashemi, Pouya, Kobayashi, Masaharu, Park, Dae-Gyu, Hoyt, Judy L.
Published in ECS transactions (12.08.2014)
Published in ECS transactions (12.08.2014)
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Journal Article
Prospects of High-Ge-Content Strained SiGe for Advanced FinFET Generations
Hashemi, Pouya, Balakrishnan, Karthik, Ando, Takashi, Bruley, John, Ott, John A., Engelmann, Sebastian, Chan, Kevin, Lee, Kam-Leung, Park, Dae-Gyu, Mo, Renee T., Leobandung, Effendi
Published in ECS transactions (18.08.2016)
Published in ECS transactions (18.08.2016)
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Journal Article
(Invited) Strained-SiGe Channel FinFETs for High-Performance CMOS: Opportunities and Challenges
Hashemi, Pouya, Balakrishnan, Karthik, Ott, John A., Leobandung, Effendi, Mo, Renee T., Park, Dae-Gyu
Published in ECS transactions (31.03.2015)
Published in ECS transactions (31.03.2015)
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Journal Article
(Invited) Strained SiGe on Insulator FinFETs: a P-FET Candidate for 10nm Node
Hashemi, Pouya, Balakrishnan, Karthik, Majumdar, Amlan, Engelmann, Sebastian, Hopstaken, Marinus, Kim, Wanki, Ott, John A., Leobandung, Effendi, Park, Dae-Gyu
Published in ECS transactions (12.08.2014)
Published in ECS transactions (12.08.2014)
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Journal Article
Preparation and characterization of expanded graphite intercalation compound/UV-crosslinked acrylic resin pressure sensitive adhesives
Park, Gyu-Dae, Jung, Hyun-Ok, Kim, Kyung-Min, Lim, Jung-Hyurk, Lee, Ju-Won, Lee, Sung-Goo, Lee, Jae Heung, Kim, Sung-Ryong
Published in Macromolecular research (01.04.2015)
Published in Macromolecular research (01.04.2015)
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Journal Article
Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
Hashemi, Pouya, Balakrishnan, Karthik, Majumdar, Amlan, Khakifirooz, Ali, Wanki Kim, Baraskar, Ashish, Yang, Li A., Chan, Kevin, Engelmann, Sebastian U., Ott, John A., Antoniadis, Dimitri A., Leobandung, Effendi, Dae-Gyu Park
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
Measurement and analysis of gate-induced drain leakage in short-channel strained silicon germanium-on-insulator pMOS FinFETs
Balakrishnan, Karthik, Hashemi, Pouya, Ott, John A., Leobandung, Effendi, Park, Dae-Gyu
Published in 72nd Device Research Conference (01.06.2014)
Published in 72nd Device Research Conference (01.06.2014)
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Conference Proceeding
Fatigue-resistant photochromic dithienylethenes by controlling the oxidation state
Jeong, YC, Park, DG, Kim, E, Ahn, KH, Yang, SI
Published in Chemical communications (Cambridge, England) (01.01.2006)
Published in Chemical communications (Cambridge, England) (01.01.2006)
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