Search Results - "Da Nobrega, Rafael V. T." :: K.UTB vyhledávací portál

A Channel Loss Model for THz Networks From 100-600 GHz Considering Both Molecular and Water Vapor Continuum Absorptions

by Da Nobrega, Rafael V. T., Raddo, Thiago R., Jurado-Navas, Antonio, Loiola, Murilo B., Sanches, Anderson L., Debbah, Merouane
Published in IEEE open journal of vehicular technology (2023)

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Modeling of peak voltage and current of nanowire resonant tunneling devices: case study on InAs/InP double-barrier heterostructures

by Ragi, R., da Nobrega, Rafael V.T., Romero, Murilo A.
Published in International journal of numerical modelling (01.09.2013)

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A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration

by Ragi, Regiane, da Nobrega, Rafael V.T., Romero, Murilo A.
Published in Compel (01.01.2012)

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On the modelling of the C-V characteristics of semiconductor nanowire transistors

by da Nobrega, Rafael V T, Ragi, R, Romero, Murilo A
Published in 2010 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) (01.10.2010)

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Conference Proceeding

A Channel Loss Model for THz Networks From 100-600 GHz Considering Both Molecular and Water Vapor Continuum Absorptions

Modeling of peak voltage and current of nanowire resonant tunneling devices: case study on InAs/InP double-barrier heterostructures

A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration

On the modelling of the C-V characteristics of semiconductor nanowire transistors

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