An Insight Into the ESD Behavior of the Nanometer-Scale Drain-Extended NMOS Device-Part I: Turn-On Behavior of the Parasitic Bipolar
Chatterjee, A, Shrivastava, M, Gossner, H, Pendharkar, S, Brewer, F, Duvvury, C
Published in IEEE transactions on electron devices (01.02.2011)
Published in IEEE transactions on electron devices (01.02.2011)
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Journal Article
An Insight Into ESD Behavior of Nanometer-Scale Drain Extended NMOS (DeNMOS) Devices: Part II (Two-Dimensional Study-Biasing & Comparison With NMOS)
Chatterjee, A, Shrivastava, M, Gossner, H, Pendharkar, S, Brewer, F, Duvvury, C
Published in IEEE transactions on electron devices (01.02.2011)
Published in IEEE transactions on electron devices (01.02.2011)
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Journal Article
ESD Stress Data Analysis with Machine Learning: A Case Study
Middaugh, Caige, Nourani, Mehrdad, Duvvury, Charvaka, Schichl, Joe
Published in 2023 45th Annual EOS/ESD Symposium (EOS/ESD) (02.10.2023)
Published in 2023 45th Annual EOS/ESD Symposium (EOS/ESD) (02.10.2023)
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Conference Proceeding
New presepectives on component and system ESD
Duvvury, Charvaka
Published in 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (01.06.2014)
Published in 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (01.06.2014)
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Conference Proceeding
Characterization and Optimization of Sub-32-nm FinFET Devices for ESD Applications
Thijs, S., Tremouilles, D., Russ, C., Griffoni, A., Collaert, N., Rooyackers, R., Linten, D., Scholz, M., Duvvury, C., Gossner, H., Jurczak, M., Groeseneken, G.
Published in IEEE transactions on electron devices (01.12.2008)
Published in IEEE transactions on electron devices (01.12.2008)
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Journal Article
Drain Extended NMOS High Current Behavior and ESD Protection Strategy for HV Applications in Sub-100nm CMOS Technologies
Boselli, G., Vassilev, V., Duvvury, C.
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
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Conference Proceeding
Analysis of nonuniform ESD current distribution in deep submicron NMOS transistors
Kwang-Hoon Oh, Duvvury, C., Banerjee, K., Dutton, R.W.
Published in IEEE transactions on electron devices (01.12.2002)
Published in IEEE transactions on electron devices (01.12.2002)
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Journal Article
Robust high current ESD performance of nano-meter scale DeNMOS by source ballasting
Chatterjee, A, Brewer, F, Gossner, H, Pendharkar, S, Duvvury, C
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
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Conference Proceeding
Lightly doped drain transistors for advanced VLSI circuits
Baglee, D.A., Duvvury, C., Smayling, M.C., Duane, M.P.
Published in IEEE transactions on electron devices (01.01.1985)
Published in IEEE transactions on electron devices (01.01.1985)
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Journal Article
Improving surface bipolar activity in thin gate oxide DE-NMOS - A critical HV I/O protection element for nano-meter scale technologies
Chatterjee, A, Pendharkar, S, Gossner, H, Duvvury, C, Brewer, F
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
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Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
Conference Proceeding
A.1 ESD protection targets
Duvvury, Charvaka
Published in EOS/ESD 2008 - 2008 30th Electrical Overstress/Electrostatic Discharge Symposium (01.09.2008)
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Published in EOS/ESD 2008 - 2008 30th Electrical Overstress/Electrostatic Discharge Symposium (01.09.2008)
Conference Proceeding