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Year of Publication 13.09.2024
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Year of Publication 13.09.2024
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III족 질화물 반도체 성장 속도를 증가 및 이온 플럭스 훼손의 감소를 위한 시스템 및 방법
GUNNING BRENDAN PATRICK, FABIEN CHLOE A.M, DOOLITTLE WILLIAM ALAN, CLINTON EVAN A, MEROLA JOSEPH J
Year of Publication 21.03.2018
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Year of Publication 21.03.2018
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Wet-based digital etching on GaN and AlGaN
Shih, Pao-Chuan, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan, Palacios, Tomás
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Published in Applied physics letters (10.01.2022)
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Journal Article
III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices
Fabien, Chloe A. M., Maros, Aymeric, Honsberg, Christiana B., Doolittle, William Alan
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Published in IEEE journal of photovoltaics (01.03.2016)
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Journal Article
The origin of the residual conductivity of GaN films on ferroelectric materials
Lee, Kyoung-Keun, Cai, Zhuhua, Ziemer, Katherine, Doolittle, William Alan
Published in Journal of crystal growth (01.08.2009)
Published in Journal of crystal growth (01.08.2009)
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Journal Article
ALUMINUM NITRIDE-BASED HIGH POWER DEVICES AND METHODS OF MAKING THE SAME
DOOLITTLE, William Alan, MOTOKI, Keisuke, WEIDENBACH, Alex S, AHMAD, Habib, ENGEL, Zachary P, MATTHEWS, Christopher M
Year of Publication 22.02.2024
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Year of Publication 22.02.2024
Patent
ALUMINUM NITRIDE-BASED HIGH POWER DEVICES AND METHODS OF MAKING THE SAME
DOOLITTLE, William Alan, MOTOKI, Keisuke, WEIDENBACH, Alex S, AHMAD, Habib, ENGEL, Zachary P, MATTHEWS, Christopher M
Year of Publication 30.11.2023
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Year of Publication 30.11.2023
Patent