Search Results - "DOKI, MASAHIKO" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

THIN FILM FORMING METHOD USING RADIO FREQUENCY PLASMA AND APPARATUS THEREOF

THIN FILM FORMING METHOD USING RADIO FREQUENCY PLASMA AND APPARATUS THEREOF

by SUZUKI, SHIGERU, DORAGUCHI, MAKOTO, DOKI, MASAHIKO
Year of Publication 04.02.1994

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Patent

SILICON CARBIDE BARRIER LAYER BETWEEN SILICON SUBSTRATE AND METAL LAYER

SILICON CARBIDE BARRIER LAYER BETWEEN SILICON SUBSTRATE AND METAL LAYER

by ITO, GIKUO, FURUMURA, YUJI, ESHITA, DAKASHI, MIENO, FUMIDAKE, DOKI, MASAHIKO
Year of Publication 21.09.1992

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Patent

Apparatus for and method of processing a semiconductor device using microwave-generated plasma

Apparatus for and method of processing a semiconductor device using microwave-generated plasma

by OOIWA, KIYOSHI, DOKI, MASAHIKO
Year of Publication 15.03.1995

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Patent

Plasma process apparatus and plasma processing method

Plasma process apparatus and plasma processing method

by OOIWA; KIYOSHI, DOKI; MASAHIKO
Year of Publication 10.05.1994

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Patent

TREATING METHOD AND APPARATUS USING PLASMA

TREATING METHOD AND APPARATUS USING PLASMA

by DOKI, MASAHIKO, OIWA, KIYOSHI
Year of Publication 15.03.1993

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Patent

Method of forming shallow junctions

Method of forming shallow junctions

by TAKEI; MICHIKO, DOKI; MASAHIKO
Year of Publication 02.02.1993

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Patent

PLASMA PROCESS APPARATUS AND PLASMA PROCESSING METHOD

PLASMA PROCESS APPARATUS AND PLASMA PROCESSING METHOD

by OOIWA; KIYOSHI, DOKI; MASAHIKO
Year of Publication 03.11.1992

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Patent

PLASMA PROCESSING APPARATUS

PLASMA PROCESSING APPARATUS

by KIYOSHI OOIWA, MASAHIKO DOKI
Year of Publication 12.02.1992

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Patent

APPARATUS FOR AND METHOD OF PROCESSING A SEMICONDUCTOR DEVICE USING MICROWAVE-GENERATED PLASMA

APPARATUS FOR AND METHOD OF PROCESSING A SEMICONDUCTOR DEVICE USING MICROWAVE-GENERATED PLASMA

by OOIWA, KIYOSHI, DOKI, MASAHIKO
Year of Publication 24.07.1991

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Patent

Apparatus for and method of processing a semiconductor device using microwave-generated plasma

Apparatus for and method of processing a semiconductor device using microwave-generated plasma

by OOIWA, KIYOSHI, DOKI, MASAHIKO
Year of Publication 31.10.1990

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Patent

METHOD OF FORMING SHALLOW JUNCTION AND SEMICONDUCTOR DEVICE HAVING SAID SHALLOW JUNCTION

METHOD OF FORMING SHALLOW JUNCTION AND SEMICONDUCTOR DEVICE HAVING SAID SHALLOW JUNCTION

by DOKI, MASAHIKO, TAKEI, MICHIKO
Year of Publication 16.08.1990

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Patent

Plasma processing apparatus

Plasma processing apparatus

by OOIWA; KIYOSHI, DOKI; MASAHIKO
Year of Publication 02.01.1990

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Patent

PLASMA PROCESSING APPARATUS

PLASMA PROCESSING APPARATUS

by KIYOSHI OOIWA, MASAHIKO DOKI
Year of Publication 02.08.1989

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Patent

Method of forming shallow junction and semiconductor device having said shallow junction

Method of forming shallow junction and semiconductor device having said shallow junction

by DOKI, MASAHIKO, TAKEI, MICHIKO
Year of Publication 05.07.1989

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Patent

Method for forming multilayer insulating film of semiconductor device

Method for forming multilayer insulating film of semiconductor device

by FURUMURA; YUJI, DOKI; MASAHIKO, NISHIO; HIDETOSHI
Year of Publication 09.06.1998

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Patent

Characteristics of β-SIC films grown from an SiHC13-C3H8-H2 system

Characteristics of β-SIC films grown from an SiHC13-C3H8-H2 system

by Furumura, Yuji, Doki, Masahiko, Mieno, Fumitake, Maeda, Mamoru
Published in Electronics & communications in Japan. Part 2, Electronics (1987)

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Journal Article

Characteristics of β‐SIC films grown from an SiHC1 3 ‐C 3 H 8 ‐H 2 system

Characteristics of β‐SIC films grown from an SiHC1 3 ‐C 3 H 8 ‐H 2 system

by Furumura, Yuji, Doki, Masahiko, Mieno, Fumitake, Maeda, Mamoru
Published in Electronics & communications in Japan. Part 2, Electronics (01.01.1987)

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Journal Article

yethod of depositing insulating layer on underlying layer using plasma-assisted CVD process using pulse-modulated plasma

yethod of depositing insulating layer on underlying layer using plasma-assisted CVD process using pulse-modulated plasma

by FURUMURA, YUJI, NAKAHIRA, JUNYA, DOKI, MASAHIKO
Year of Publication 10.07.1996

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Patent

Multilayer insulating film of semiconductor device and method for forming the film

Multilayer insulating film of semiconductor device and method for forming the film

by FURUMURA; YUJI, DOKI; MASAHIKO, NISHIO; HIDETOSHI
Year of Publication 09.04.1996

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Patent

INSULATING FILM FORMING METHOD USING PULSE MODULATED PLASMA

INSULATING FILM FORMING METHOD USING PULSE MODULATED PLASMA

by NAKAHIRA, JUNYA, HURUMURA, YUJI, DOKI, MASAHIKO
Year of Publication 10.02.1996

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Patent