SILICON CARBIDE BARRIER LAYER BETWEEN SILICON SUBSTRATE AND METAL LAYER
ITO, GIKUO, FURUMURA, YUJI, ESHITA, DAKASHI, MIENO, FUMIDAKE, DOKI, MASAHIKO
Year of Publication 21.09.1992
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Year of Publication 21.09.1992
Patent
Characteristics of β‐SIC films grown from an SiHC1 3 ‐C 3 H 8 ‐H 2 system
Furumura, Yuji, Doki, Masahiko, Mieno, Fumitake, Maeda, Mamoru
Published in Electronics & communications in Japan. Part 2, Electronics (01.01.1987)
Published in Electronics & communications in Japan. Part 2, Electronics (01.01.1987)
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Journal Article