Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs
Doi, Takuma, Shibayama, Shigehisa, Sakashita, Mitsuo, Taoka, Noriyuki, Shimizu, Mitsuaki, Nakatsuka, Osamu
Published in Japanese Journal of Applied Physics (01.02.2022)
Published in Japanese Journal of Applied Physics (01.02.2022)
Get full text
Journal Article
Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment
Doi, Takuma, Takeuchi, Wakana, Shibayama, Shigehisa, Sakashita, Mitsuo, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki
Published in Japanese Journal of Applied Physics (22.02.2019)
Published in Japanese Journal of Applied Physics (22.02.2019)
Get full text
Journal Article
Erratum: "Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment" [Jpn. J. Appl. Phys. 58 SBBD05 (2019)]
Doi, Takuma, Takeuchi, Wakana, Shibayama, Shigehisa, Sakashita, Mitsuo, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki
Published in Japanese Journal of Applied Physics (27.03.2019)
Published in Japanese Journal of Applied Physics (27.03.2019)
Get full text
Journal Article
Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion
Doi, Takuma, Shibayama, Shigehisa, Sakashita, Mitsuo, Shimizu, Mitsuaki, Nakatsuka, Osamu
Published in Japanese Journal of Applied Physics (01.07.2021)
Published in Japanese Journal of Applied Physics (01.07.2021)
Get full text
Journal Article
Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method
Nagano, Jotaro, Ikeguchi, Shota, Doi, Takuma, Sakashita, Mitsuo, Nakatsuka, Osamu, Shibayama, Shigehisa
Published in Materials science in semiconductor processing (15.08.2023)
Published in Materials science in semiconductor processing (15.08.2023)
Get full text
Journal Article
Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height
Doi, Takuma, Shibayama, Shigehisa, Sakashita, Mitsuo, Kojima, Kazutoshi, Shimizu, Mitsuaki, Nakatsuka, Osamu
Published in Applied physics express (01.01.2022)
Published in Applied physics express (01.01.2022)
Get full text
Journal Article
Fermi-level pinning at metal/4H-SiC contact induced by SiC x O y interlayer
Hashimoto, Kentaro, Doi, Takuma, Shibayama, Shigehisa, Nakatsuka, Osamu
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
Get full text
Journal Article
Fermi-level pinning at metal/4H-SiC contact induced by SiCx Oy interlayer
Hashimoto, Kentaro, Doi, Takuma, Shibayama, Shigehisa, Nakatsuka, Osamu
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
Get full text
Journal Article
Final report on supplementary comparison on step heights standards (APMP.L-S7)
Sharma, Rina, Moona, Girija, Tonmueanwai, Anusorn, Buajarern, Jariya, Shihua, Wang, Matus, Michael, Doi, Takuma, Sugawara, Kentaro
Published in Metrologia (01.01.2021)
Published in Metrologia (01.01.2021)
Get full text
Journal Article
Erratum: “Effect of carbon in Si oxide interlayers of the Al 2 O 3 /4H-SiC structure on interfacial reaction by oxygen radical treatment” [Jpn. J. Appl. Phys. 58 SBBD05 (2019)]
Doi, Takuma, Takeuchi, Wakana, Shibayama, Shigehisa, Sakashita, Mitsuo, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
Get full text
Journal Article
Effect of carbon in Si oxide interlayers of the Al 2 O 3 /4H-SiC structure on interfacial reaction by oxygen radical treatment
Doi, Takuma, Takeuchi, Wakana, Shibayama, Shigehisa, Sakashita, Mitsuo, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
Get full text
Journal Article
Descriptor-Free Multi-View Region Matching for Instance-Wise 3D Reconstruction
Doi, Takuma, Okura, Fumio, Nagahara, Toshiki, Matsushita, Yasuyuki, Yagi, Yasushi
Year of Publication 27.11.2020
Year of Publication 27.11.2020
Get full text
Journal Article
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
KATONO, Kazuhiro, SAITO, Yuta, TORATANI, Kenichiro, MUTO, Yusuke, DOI, Takuma, TODA, Masaya, MATSUO, Kazuhiro, TAKAHASHI, Kota, NAKATA, Masaya, GAWASE, Akifumi
Year of Publication 26.09.2024
Get full text
Year of Publication 26.09.2024
Patent