Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond ( invited)
Schnabel, R.F, Clevenger, L.A, Costrini, G, Dobuzinsky, D.M, Filippi, R, Gambino, J, Lee, G.Y, Iggulden, R.C, Lin, C, Lu, Z.G, Ning, X.J, Ramachandran, R, Ronay, M, Többen, D, Weber, S.J
Published in Microelectronic engineering (2000)
Published in Microelectronic engineering (2000)
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Published in Journal of the Electrochemical Society (01.07.1995)
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Journal Article
Aluminum dual damascene metallization for 0.175 mu m DRAM generations and beyond
Schnabel, R F, Clevenger, L A, Costiri, G, Dobuzinsky, D M, Filippi, R, Gambino, J, Lee, G Y, Iggulden, R C, Lin, C, Lu, Z G
Published in Microelectronic engineering (07.03.1999)
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Published in Microelectronic engineering (07.03.1999)
Journal Article