Gate Length and Performance Scaling of Undoped-Body Extremely Thin SOI MOSFETs
Majumdar, A., Xinlin Wang, Kumar, A., Holt, J.R., Dobuzinsky, D., Venigalla, R., Ouyang, C., Koester, S.J., Haensch, W.
Published in IEEE electron device letters (01.04.2009)
Published in IEEE electron device letters (01.04.2009)
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Journal Article
High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors
Majumdar, A., Zhibin Ren, Sleight, J.W., Dobuzinsky, D., Holt, J.R., Venigalla, R., Koester, S.J., Haensch, W.
Published in IEEE electron device letters (01.05.2008)
Published in IEEE electron device letters (01.05.2008)
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Journal Article
CVD of fluorosilicate glass for ULSI applications
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Conference Proceeding
Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond ( invited)
Schnabel, R.F, Clevenger, L.A, Costrini, G, Dobuzinsky, D.M, Filippi, R, Gambino, J, Lee, G.Y, Iggulden, R.C, Lin, C, Lu, Z.G, Ning, X.J, Ramachandran, R, Ronay, M, Többen, D, Weber, S.J
Published in Microelectronic engineering (2000)
Published in Microelectronic engineering (2000)
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Conference Proceeding
High yielding self-aligned contact process for a 0.150-μm DRAM technology
RUPP, Thomas S, DOBUZINSKY, David, ZHIJIAN LU, SARDESAI, Viraj Y, LIU, Hang-Yip, MALDEI, Michael, FALTERMEIER, John, GAMBINO, Jeff
Published in IEEE transactions on semiconductor manufacturing (01.05.2002)
Published in IEEE transactions on semiconductor manufacturing (01.05.2002)
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Journal Article
Dry etch challenges of 0.25 μm dual damascene structures
Schnabel, R.F., Dobuzinsky, D., Gambino, J., Muller, K.P., Wang, F., Perng, D.C., Palm, H.
Published in Microelectronic engineering (01.11.1997)
Published in Microelectronic engineering (01.11.1997)
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Journal Article
Ultrathin RTP oxynitride dielectrics on planar, trench and three dimensional structures
Nguyen, Son V., Nguyen, Tue, Carl, D., Pricer, D., Korejwa, J.W., Dobuzinsky, D.
Published in Microelectronics and reliability (01.01.1998)
Published in Microelectronics and reliability (01.01.1998)
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Journal Article
Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films
Nguyen, S.V, Dobuzinsky, D, Dopp, D, Gleason, R, Gibson, M, Fridmann, S
Published in Thin solid films (15.12.1990)
Published in Thin solid films (15.12.1990)
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Journal Article
A novel fingered stacked capacitor cell
NGUYEN, T, NGUYEN, S. V, DOBUZINSKY, D. M, CARL, D. A
Published in Journal of the Electrochemical Society (01.07.1995)
Published in Journal of the Electrochemical Society (01.07.1995)
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Journal Article
Ultra-thin SOI replacement gate CMOS with ALD TaN/high-k gate stack
Doris, B., Park, D.G., Settlemyer, K., Jamison, P., Boyd, D., Li, Y., Hagan, J., Staendert, T., Mezzapelli, J., Dobuzinsky, D., Linder, B., Narayanan, V., Callegari, S., Gousev, E., Guarini, K., Jammy, R., Leong, M.
Published in IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech) (2005)
Published in IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech) (2005)
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Conference Proceeding
Cleans for Al vias in a 0.175 μm dual damascene process
GAMBINO, J, CLEVENGER, L, BRULEY, J, DOMENICUCCI, A, COSTRINI, G, SCHNABEL, F, RAVIKUMAR, R, DOBUZINSKY, D, IGGULDEN, R, DZIOBKOWSKI, C, WILDMAN, H, BENEDICT, J
Year of Publication 1999
Year of Publication 1999
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Conference Proceeding
High yielding self-aligned contact process for a 0.150-[micro]m DRAM technology
Rupp, T.S, Dobuzinsky, D, Sardesai, V.Y, Liu, Hang-Yip, Maldei, M, Faltermeier, J, Gambino, J
Published in IEEE transactions on semiconductor manufacturing (01.05.2002)
Published in IEEE transactions on semiconductor manufacturing (01.05.2002)
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Journal Article
High yielding self-aligned contact process for a 0.150-mum DRAM technology
Rupp, T S, Dobuzinsky, D, Sardesai, V Y, Liu, Hang-Yip, Maldei, M, Faltermeier, J, Gambino, J
Published in IEEE transactions on semiconductor manufacturing (01.05.2002)
Published in IEEE transactions on semiconductor manufacturing (01.05.2002)
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Journal Article
Aluminum dual damascene metallization for 0.175 mu m DRAM generations and beyond
Schnabel, R F, Clevenger, L A, Costiri, G, Dobuzinsky, D M, Filippi, R, Gambino, J, Lee, G Y, Iggulden, R C, Lin, C, Lu, Z G
Published in Microelectronic engineering (07.03.1999)
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Published in Microelectronic engineering (07.03.1999)
Journal Article
High selectivity magnetically enhanced reactive ion etching of boron nitride films
COTE, D, NGUYEN, S, DOBUZINSKY, D, BASA, C, NEUREITHER, B
Published in Journal of the Electrochemical Society (01.12.1994)
Published in Journal of the Electrochemical Society (01.12.1994)
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Journal Article
Ultra-Low Leakage Silicon-on-Insulator Technology for 65 nm Node and Beyond
Jin Cai, Majumdar, A., Dobuzinsky, D., Ning, T.H., Koester, S.J., Haensch, W.E.
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
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