Method of production the magnesium doped epitaxial layer of InxAlyGa1-x-yN of type p conductivity, for which )0 x 0,2 and 0 y 0,3 and multilayer semiconductor structures containing such epitaxial layer
PERLIN PIOTR, PIOTRZKOWSKI RYSZARD, GRZEGORY IZABELLA, SUSKI TADEUSZ, KRY KO MARCIN, POROWSKI SYLWESTER, LESZCZY SKI MICHA, PRYSTAWKO PAWE, UCZNIK BOLES AW, CZERNECKI ROBERT, LITWIN-STASZEWSKA EL BIETA, GRZANKA SZYMON, DMOWSKI LES AW
Year of Publication 09.11.2009
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Year of Publication 09.11.2009
Patent