Search Results - "DMITRI LOUBYCHEV" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

by Rode, Johann C., Han-Wei Chiang, Choudhary, Prateek, Jain, Vibhor, Thibeault, Brian J., Mitchell, William J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.
Published in IEEE transactions on electron devices (01.09.2015)

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Journal Article

$An InGaAs/InP DHBT With Simultaneous \text/\text}~404/901 GHz and 4.3 V Breakdown Voltage$

An InGaAs/InP DHBT With Simultaneous \text/\text}~404/901 GHz and 4.3 V Breakdown Voltage

by Rode, Johann C., Chiang, Han-Wei, Choudhary, Prateek, Jain, Vibhor, Thibeault, Brian J., Mitchell, William J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.
Published in IEEE journal of the Electron Devices Society (01.01.2015)

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Journal Article

Experimental Staggered-Source and N+ Pocket-Doped Channel III--V Tunnel Field-Effect Transistors and Their Scalabilities

Experimental Staggered-Source and N+ Pocket-Doped Channel III--V Tunnel Field-Effect Transistors and Their Scalabilities

by Mohata, Dheeraj, Mookerjea, Saurabh, Agrawal, Ashish, Li, Yuanyuan, Mayer, Theresa, Narayanan, Vijaykrishnan, Liu, Amy, Loubychev, Dmitri, Fastenau, Joel, Datta, Suman
Published in Applied physics express (01.02.2011)

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Journal Article

InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced C cb and increased RF cut‐off frequency

InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced C cb and increased RF cut‐off frequency

by Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han‐Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.
Published in Physica status solidi. C (01.05.2013)

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Journal Article

InGaAs/InP DHBTs with 120-nm collector having simultaneously high fτ, fmax ≥ 450 GHz

InGaAs/InP DHBTs with 120-nm collector having simultaneously high fτ, fmax ≥ 450 GHz

by GRIFFITH, Zach, RODWELL, Mark J. W, FANG, Xiao-Ming, LOUBYCHEV, Dmitri, YING WU, FASTENAU, Joel M, LIU, Amy W. K
Published in IEEE electron device letters (01.08.2005)

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Journal Article

InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced C sub(c)band increased RF cut-off frequency

InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced C sub(c)band increased RF cut-off frequency

by Lobisser, Evan, Rode, Johann C, Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J, Thibeault, Brian J, Rodwell, Mark JW, Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M, Liu, Amy WK
Published in Physica status solidi. C (01.05.2013)

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Journal Article

InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency

InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency

by Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.
Published in Physica status solidi. C (01.05.2013)

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Journal Article

200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz

200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz

by Lobisser, E., Griffith, Z., Jain, V., Thibeault, B.J., Rodwell, M.J.W., Loubychev, D., Snyder, A., Ying Wu, Fastenau, J.M., Liu, A.W.K.
Published in 2009 IEEE International Conference on Indium Phosphide & Related Materials (01.05.2009)

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Conference Proceeding

Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

by Parthasarathy, N., Griffith, Z., Kadow, C., Singisetti, U., Rodwell, M.J.W., Xiao-Ming Fang, Loubychev, D., Ying Wu, Fastenau, J.M., Liu, A.W.K.
Published in IEEE electron device letters (01.05.2006)

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Journal Article

250 nm InGaAs/InP DHBTs w/650 GHz /spl conint/max and 420 GHz /spl conint/τ, operating above 30 mW/μm2

250 nm InGaAs/InP DHBTs w/650 GHz /spl conint/max and 420 GHz /spl conint/τ, operating above 30 mW/μm2

by Lind, Erik, Griffith, Zach, Rodwell, Mark J.W., Fang, Xiao-ming, Loubychev, Dmitri, Wu, Yu, Fastenau, Joel M., K. Liu, Amy W.
Published in 2006 64th Device Research Conference (01.06.2006)

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Conference Proceeding

In/sub 0.53/Ga/sub 0.47/As/InP type-I DHBTs having 450 GHz f/sub T/ and GHz f/sub max/ w/C/sub cb/I/sub c/ = 0.38 ps/V

In/sub 0.53/Ga/sub 0.47/As/InP type-I DHBTs having 450 GHz f/sub T/ and GHz f/sub max/ w/C/sub cb/I/sub c/ = 0.38 ps/V

by Liu, Amy W.K., Fastenau, Joel M., Wu, Ying, Loubychev, Dmitri, Fang, Xiao-Ming, Rodwell, Mark J.W., Griffith, Zach
Published in 63rd Device Research Conference Digest, 2005. DRC '05 (2005)

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Conference Proceeding

New apparatus for performing perturbed-angular-correlation spectroscopy on epitaxially grown III–V surfaces

New apparatus for performing perturbed-angular-correlation spectroscopy on epitaxially grown III–V surfaces

by Adams, JamesM, Catchen, GaryL, Loubychev, Dmitri, Fu, Jianming, Miller, D.L.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.10.1998)

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Journal Article

Métodos paera formar uma arquitetura de camada amortecedora em silício e estruturas formadas por meio destes

Métodos paera formar uma arquitetura de camada amortecedora em silício e estruturas formadas por meio destes

by DMITRI LOUBYCHEV, PETER G. TOLCHINSKY, JOEL M. FASTENAU, MANTU K. HUDAIT, AMY W.K. LIU, LOREN A. CHOW
Year of Publication 25.08.2015

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Patent

Semiconductor buffer architecture for III-V devices on silicon substrates

Semiconductor buffer architecture for III-V devices on silicon substrates

by SHAHEEN MOHAMAD A, LOUBYCHEV DMITRI, FASTENAU JOEL M, LIU AMY W. K, HUDAIT MANTU K
Year of Publication 11.10.2011

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Patent

Semiconductor buffer architecture for III-V devices on silicon substrates

Semiconductor buffer architecture for III-V devices on silicon substrates

by Hudait, Mantu K, Shaheen, Mohamad A, Loubychev, Dmitri, Liu, Amy W. K, Fastenau, Joel M
Year of Publication 11.10.2011

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Patent

Stacking fault and twin blocking barrier for integrating III-V on Si

Stacking fault and twin blocking barrier for integrating III-V on Si

by SHAHEEN MOHAMAD A, TOLCHINSKY PETER G, LOUBYCHEV DMITRI, CHOW LOREN A, FASTENAU JOEL M, LIU AMY W. K, HUDAIT MANTU K
Year of Publication 31.12.2013

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Patent

Methods of forming buffer layer architecture on silicon and structures formed thereby

Methods of forming buffer layer architecture on silicon and structures formed thereby

by LOREN A CHOW, DMITRI LOUBYCHEV, MANTU K HUDAIT, AMY W.K. LIU, PETER G TOLCHINSKY, JOEL M FASTENAU
Year of Publication 10.10.2012

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Patent

SEMICONDUCTOR BUFFER ARCHITECTURE FOR III-V DEVICES ON SILICON SUBSTRATES

SEMICONDUCTOR BUFFER ARCHITECTURE FOR III-V DEVICES ON SILICON SUBSTRATES

by SHAHEEN MOHAMAD A, LOUBYCHEV DMITRI, FASTENAU JOEL M, LIU AMY W. K, HUDAIT MANTU K
Year of Publication 24.02.2011

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Patent

STACKING FAULT AND TWIN BLOCKING BARRIER FOR INTEGRATING III-V ON SI

STACKING FAULT AND TWIN BLOCKING BARRIER FOR INTEGRATING III-V ON SI

by SHAHEEN MOHAMAD A, LIU AMY W.K, TOLCHINSKY PETER G, LOUBYCHEV DMITRI, CHOW LOREN A, FASTENAU JOEL M, HUDAIT MANTU K
Year of Publication 07.06.2012

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Patent

Semiconductor buffer architecture for III-V devices on silicon substrates

Semiconductor buffer architecture for III-V devices on silicon substrates

by SHAHEEN MOHAMAD A, LOUBYCHEV DMITRI, FASTENAU JOEL M, LIU AMY W. K, HUDAIT MANTU K
Year of Publication 14.12.2010

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Patent