Improving the RF Performance of InP DHBT Using f T -Doubler Technique
Zhu, Zhaochen, Ding, Wuchang, Wang, Yanzhe, Ding, Jianjun, Zhou, Fugui, Su, Yongbo, Yang, Feng, Jin, Zhi
Published in IEEE microwave and wireless technology letters (Print) (01.12.2023)
Published in IEEE microwave and wireless technology letters (Print) (01.12.2023)
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Journal Article
Improving the RF Performance of InP DHBT Using fT-Doubler Technique
Zhu, Zhaochen, Ding, Wuchang, Wang, Yanzhe, Ding, Jianjun, Zhou, Fugui, Su, Yongbo, Yang, Feng, Jin, Zhi
Published in IEEE microwave and wireless technology letters (Print) (01.12.2023)
Published in IEEE microwave and wireless technology letters (Print) (01.12.2023)
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Journal Article
A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs
Ding, Wuchang, Ding, Peng, Su, Yongbo, Zhou, Jingtao, Yang, Feng, Hu, Jun, Peng, Songang, Shi, Jingyuan, Zhang, Dayong, Jin, Zhi
Published in International journal of RF and microwave computer-aided engineering (01.07.2020)
Published in International journal of RF and microwave computer-aided engineering (01.07.2020)
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Journal Article
TSPEM Parameter Extraction Method and Its Applications in the Modeling of Planar Schottky Diode in THz Band
Liu, Xiaoyu, Zhang, Yong, Wang, Haoran, Qi, Luwei, Wang, Bo, Zhou, Jingtao, Ding, Wuchang, Jin, Zhi, Xiao, Fei
Published in Electronics (Basel) (01.07.2021)
Published in Electronics (Basel) (01.07.2021)
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Journal Article
Analysis and design of a stacked power amplifier with 196% fractional bandwidth using equivalent circuit model
Hu, Jun, Wang, Xi, Li, Shaojun, Asif, Muhammad, Ding, Peng, Su, Yongbo, Ding, Wuchang, Yang, Feng, Chen, Xiaojuan, Jin, Zhi
Published in International journal of RF and microwave computer-aided engineering (01.05.2020)
Published in International journal of RF and microwave computer-aided engineering (01.05.2020)
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Journal Article
Ultra-thin 20 nm-PECVD-Si 3 N 4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance
Ding, Peng, Chen, Chen, Ding, Wuchang, Yang, Feng, Su, Yongbo, Wang, Dahai, Jin, Zhi
Published in Solid-state electronics (01.09.2016)
Published in Solid-state electronics (01.09.2016)
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Journal Article
Ultra-thin 20 nm-PECVD-Si sub(3)N sub(4) surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance
Ding, Peng, Chen, Chen, Ding, Wuchang, Yang, Feng, Su, Yongbo, Wang, Dahai, Jin, Zhi
Published in Solid-state electronics (01.09.2016)
Published in Solid-state electronics (01.09.2016)
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Journal Article
Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method
Zhang, Daisheng, Jia, Rui, Chen, Chen, Ding, Wuchang, Jin, Zhi, Liu, Xinyu, Ye, Tianchun
Published in Chemical physics letters (09.05.2014)
Published in Chemical physics letters (09.05.2014)
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Journal Article
Si 3 N 4 /Al 2 O 3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances
Ding, Peng, Jin, Zhi, Chen, Chen, Asif, Muhammad, Wang, Xi, Niu, Jiebin, Yang, Feng, Ding, Wuchang, Su, Yongbo, Wang, Dahai
Published in IEEE journal of the Electron Devices Society (2018)
Published in IEEE journal of the Electron Devices Society (2018)
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Journal Article
Numerical simulation and modeling of spectral conversion by silicon nanocrystals with multiple exciton generation
Ding, Wuchang, Jia, Rui, Wu, Deqi, Chen, Chen, Li, Haofeng, Liu, Xinyu, Ye, Tianchun
Published in Journal of applied physics (01.03.2011)
Published in Journal of applied physics (01.03.2011)
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Journal Article
f
Qing, Wang, Peng, Ding, Yongbo, Su, Wuchang, Ding, Asif, Muhammad, Wu, Tang, Zhi, Jin
Published in Journal of semiconductors (01.07.2016)
Published in Journal of semiconductors (01.07.2016)
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Journal Article
fT = 260 GHz and fmax = 607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max = 1441 mS/mmProject supported by the National Natural Science Foundation of China (No. 61434006)
Wang, Qing, Ding, Peng, Su, Yongbo, Ding, Wuchang, Asif, Muhammad, Tang, Wu, Jin, Zhi
Published in Journal of semiconductors (01.07.2016)
Published in Journal of semiconductors (01.07.2016)
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Journal Article
Optimization of Al 2 O 3 /SiN x stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells
Wu, Dawei, Jia, Rui, Ding, Wuchang, Chen, Chen, Wu, Deqi, Chen, Wei, Li, Haofeng, Yue, Huihui, Liu, Xinyu
Published in Journal of semiconductors (01.09.2011)
Published in Journal of semiconductors (01.09.2011)
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Journal Article
Semiconductor device structure, manufacturing method thereof and high electron mobility transistor
TONG ZHIHANG, LIU TONG, DING WUCHANG, SU YONGBO, WANG YANFU, FENG RUIZE, ZHOU JINGTAO, DING PENG, JIN ZHI, WANG BO, YANG FENG
Year of Publication 20.09.2022
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Year of Publication 20.09.2022
Patent
Parameter extraction modeling method suitable for discrete device after scribing
DING WUCHANG, ZHANG SHENG, YUAN TINGTING, CHEN XIAOJUAN, WEI KE, LIU XINYU, ZHENG YINGKUI, JIN ZHI, LI YANKUI, LIU GUOGUO
Year of Publication 26.07.2022
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Year of Publication 26.07.2022
Patent
Heterogeneous integrated radio frequency amplifier structure
SUN BING, DING WUCHANG, CHANG HUDONG, LIU HONGGANG, JIN ZHI, YANG FENG
Year of Publication 27.12.2019
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Year of Publication 27.12.2019
Patent