Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors
Shenai-Khatkhate, Deodatta V., Goyette, Randall J., DiCarlo Jr, Ronald L., Dripps, Gregory
Published in Journal of crystal growth (10.12.2004)
Published in Journal of crystal growth (10.12.2004)
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Journal Article
Conference Proceeding
Accurate vapor pressure equation for trimethylindium in OMVPE
Shenai-Khatkhate, Deodatta V., DiCarlo, Ronald L., Ware, Robert A.
Published in Journal of crystal growth (01.04.2008)
Published in Journal of crystal growth (01.04.2008)
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Journal Article
Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE
Shenai, Deo V., DiCarlo, Ronald L., Power, Michael B., Amamchyan, Artashes, Goyette, Randall J., Woelk, Egbert
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding
Stable vapor transportation of solid sources in MOVPE of III–V compound semiconductors
Shenai-Khatkhate, Deodatta V., DiCarlo, Ronald L., Marsman, Charles J., Polcari, Robert F., Ware, Robert A., Woelk, Egbert
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding
Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine
Shenai, Deodatta V., Timmons, Michael L., DiCarlo, Ronald L., Marsman, Charles J.
Published in Journal of crystal growth (10.12.2004)
Published in Journal of crystal growth (10.12.2004)
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Journal Article
Conference Proceeding