Mid-wavelength infrared p-on-n Hg1-xCdxTe heterostructure detectors: 30-120 kelvin state-of-the-art performance
ZANDIAN, Majid, GARNETT, J. D, ARIAS, J. M, VURAL, K, HALL, Donald N. B, DEWAMES, R. E, CARMODY, M, PASKO, J. G, FARRIS, M, CABELLI, C. A, COOPER, D. E, HILDEBRANDT, G, CHOW, J
Published in Journal of electronic materials (01.07.2003)
Published in Journal of electronic materials (01.07.2003)
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Model for minority carrier lifetimes in doped HgCdTe
KRISHNAMURTHY, S, BERDING, M. A, YU, Z. G, SWARTZ, C. H, MYERS, T. H, EDWALL, D. D, DEWAMES, R
Published in Journal of electronic materials (01.06.2005)
Published in Journal of electronic materials (01.06.2005)
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1/f noise in large-area Hg1-xCdxTe photodiodes
D'SOUZA, A. I, STAPELBROEK, M. G, DOLAN, P. N, WIJEWARNASURIYA, P. S, DEWAMES, R. E, SMITH, D. S, EHLERT, J. C
Published in Journal of electronic materials (01.07.2003)
Published in Journal of electronic materials (01.07.2003)
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Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote-sensing applications
WIJEWARNASURIYA, P. S, ZANDIAN, M, PHILLIPS, J, EDWALL, D, DEWAMES, R. E, HILDEBRANDT, G, BAJAJ, J, ARIAS, J. M, D'SOUZA, A. I, MOORE, F
Published in Journal of electronic materials (01.07.2002)
Published in Journal of electronic materials (01.07.2002)
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1/f noise in very-long-wavelength infrared Hg1-xCdxTe detectors
D'SOUZA, A. I, STAPELBROEK, M. G, WIJEWARNASURIYA, P. S, DEWAMES, R. E, WILLIAMS, G. M
Published in Journal of electronic materials (01.07.2002)
Published in Journal of electronic materials (01.07.2002)
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Current mechanisms in VLWIR Hg1-xCdxTe photodiodes
D'SOUZA, A. I, DEWAMES, R. E, WIJEWARNASURIYA, P. S, HILDEBRANDT, G, ARIAS, J. M
Published in Journal of electronic materials (01.06.2001)
Published in Journal of electronic materials (01.06.2001)
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Large VLWIR Hg1−xCdxTe photovoltaic detectors
D’Souza, A. I., Dawson, L. C., Staller, C., Wijewarnasuriya, P. S., Dewames, R. E., Mclevige, W. V., Arias, J. M., Edwall, D., Hildebrandt, G.
Published in Journal of electronic materials (01.06.2000)
Published in Journal of electronic materials (01.06.2000)
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Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors
D’Souza, A. I., Wijewarnasuriya, P. S., Dewames, R. E., Hildebrandt, G., Bajaj, J., Edwall, D. D., Pasko, J. G., Arias, J. M.
Published in Journal of electronic materials (01.06.1999)
Published in Journal of electronic materials (01.06.1999)
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Dark current generating mechanisms in short wavelength infrared photovoltaic detectors
Dewames, R. E., Edwall, D. D., Zandian, M., Bubulac, L. O., Pasko, J. G., Tennant, W. E., Arias, J. M., D’Souza, A.
Published in Journal of electronic materials (01.06.1998)
Published in Journal of electronic materials (01.06.1998)
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Origin of void defects in Hg1-xCdxTe grown by molecular beam epitaxy
ZANDIAN, M, ARIAS, J. M, BAJAJ, J, PASKO, J. G, BUBULAC, L. O, DEWAMES, R. E
Published in Journal of electronic materials (01.09.1995)
Published in Journal of electronic materials (01.09.1995)
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Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions
ARIAS, J, ZANDIAN, M, PASKO, J. G, SHIN, S. H, BUBULAC, L. O, DEWAMES, R. E, TENNANT, W. E
Published in Journal of applied physics (15.02.1991)
Published in Journal of applied physics (15.02.1991)
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Electro-Optical Characteristics of P^sup +^n In^sub 0.53^Ga^sub 0.47^As Hetero-Junction Photodiodes in Large Format Dense Focal Plane Arrays
Dewames, R, Littleton, R, Witte, K, Wichman, A, Bellotti, E, Pellegrino, J
Published in Journal of electronic materials (01.08.2015)
Published in Journal of electronic materials (01.08.2015)
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HgCdTe dual-band infrared photodiodes grown by molecular beam epitaxy
ARIAS, J. M, ZANDIAN, M, WILLIAMS, G. M, BLAZEJEWSKI, E. R, DEWAMES, R. E, PASKO, J. G
Published in Journal of applied physics (15.10.1991)
Published in Journal of applied physics (15.10.1991)
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LWIR 128x128 GaAs/AlGaAs multiple quantum well hybrid focal plane array
Kozlowski, L J, Williams, G M, Sullivan, G J, Farley, C W, Anderson, R J, Chen, J, Cheung, D T, Tennant, W E, DeWames, R E
Published in IEEE transactions on electron devices (01.05.1991)
Published in IEEE transactions on electron devices (01.05.1991)
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P-on-n arsenic-activated junctions in MOCVD LWIR HgCdTe/GaAs
Bubulac, L O, Edwall, D D, McConnell, D, DeWames, R E, Blazejewski, E R, Gertner, E R
Published in Semiconductor science and technology (01.03.1990)
Published in Semiconductor science and technology (01.03.1990)
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Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation
DeWames, R.E., Williams, G.M., Pasko, J.G., Vanderwyck, A.H.B.
Published in Journal of crystal growth (01.01.1988)
Published in Journal of crystal growth (01.01.1988)
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