Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy
White, B.D., Bataiev, M., Brillson, L.J., Choi, B.K., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.I., Dettmer, R.W., Schaff, W.J., Champlain, J.G., Mishra, A.K.
Published in IEEE transactions on nuclear science (01.12.2002)
Published in IEEE transactions on nuclear science (01.12.2002)
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Journal Article
High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC
Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.
Published in IEEE electron device letters (01.11.2003)
Published in IEEE electron device letters (01.11.2003)
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Journal Article
The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors
Xinwen Hu, Choi, B.K., Barnaby, H.J., Fleetwood, D.M., Schrimpf, R.D., Sungchul Lee, Shojah-Ardalan, S., Wilkins, R., Mishra, U.K., Dettmer, R.W.
Published in IEEE transactions on nuclear science (01.04.2004)
Published in IEEE transactions on nuclear science (01.04.2004)
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Journal Article
Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy
Jessen, G.H, White, B.D, Bradley, S.T, Smith, P.E, Brillson, L.J, Van Nostrand, J.E, Fitch, R, Via, G.D, Gillespie, J.K, Dettmer, R.W, Sewell, J.S
Published in Solid-state electronics (01.09.2002)
Published in Solid-state electronics (01.09.2002)
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Journal Article
Wet chemical digital etching of GaAs at room temperature
DESALVO, G. C, BOZADA, C. A, NAKANO, K, PETTIFORD, C. I, QUACH, T. K, SEWELL, J. S, VIA, G. D, EBEL, J. L, LOOK, D. C, BARRETTE, J. P, CERNY, C. L. A, DETTMER, R. W, GILLESPIE, J. K, HAVASY, C. K, JENKINS, T. J
Published in Journal of the Electrochemical Society (01.11.1996)
Published in Journal of the Electrochemical Society (01.11.1996)
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Journal Article
Simplified ohmic and Schottky contact formation for field effect transistors using the single layer integrated metal field effect transistor (SLIMFET) process
DeSalvo, G.C., Quach, T.K., Bozada, C.A., Dettmer, R.W., Nakano, K., Gillespie, J.K., Via, G.D., Ebel, J.L., Havasy, C.K.
Published in IEEE transactions on semiconductor manufacturing (01.08.1995)
Published in IEEE transactions on semiconductor manufacturing (01.08.1995)
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Journal Article
Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors
Xinwen Hu, Choi, B.K., Barnaby, H.J., Fleetwood, D.M., Schrimpf, R.D., Galloway, K.F., Weller, R.A., McDonald, K., Mishra, U.K., Dettmer, R.W.
Published in IEEE transactions on nuclear science (01.12.2002)
Published in IEEE transactions on nuclear science (01.12.2002)
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Journal Article
Bias, frequency, and area dependencies of high frequency noise in AlGaAs/GaAs HBT's
Liou, J.J., Jenkins, T.J., Liou, L.L., Neidhard, R., Barlage, D.W., Fitch, R., Barrette, J.P., Mack, M., Bozada, C.A., Lee, R.H.Y., Dettmer, R.W., Sewell, J.S.
Published in IEEE transactions on electron devices (01.01.1996)
Published in IEEE transactions on electron devices (01.01.1996)
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Journal Article
Xs-MET-a reduced complexity fabrication process using complementary heterostructure field effect transistors for analog, low power, space applications
Cerny, C.L., Via, G.D., Ebel, J.L., DeSalvo, G.C., Quach, T.K., Bozada, C.A., Dettmer, R.W., Gillespie, J.K., Jenkins, T.J., Pettiford, C.I., Sewell, J.S., Ehret, J.E., Merkel, K., Wilson, A., Lyke, J.
Published in IEEE aerospace and electronic systems magazine (01.03.1998)
Published in IEEE aerospace and electronic systems magazine (01.03.1998)
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Magazine Article
High performance 0.14 mum gate-length AlGaN/GaN power HEMTs on SiC
Jessen, G H, Fitch, R C, Gillespie, J K, Via, G D, Moser, N A, Yannuzzi, M J, Crespo, A, Sewell, J S, Dettmer, R W, Jenkins, T J, Davis, R F, Yang, J, Khan, M A, Binari, S C
Published in IEEE electron device letters (01.11.2003)
Published in IEEE electron device letters (01.11.2003)
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Journal Article
Gate optimization of AlGaN/GaN HEMTs using WSi, Ir, Pd, and Ni Schottky contacts
Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Dettmer, R.W., Jenkins, T.J.
Published in 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003 (2003)
Published in 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003 (2003)
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Conference Proceeding
Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub
Bozada, C.A., Barlage, D.W., Barrette, J.P., Dettmer, R.W., Mack, M.P., Sewell, J.S., Via, G.D., Yang, L.W., Helms, D.R., Komiak, J.J.
Published in GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 (1995)
Published in GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 (1995)
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Conference Proceeding
Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers
Bozada, C.A., Dettmer, R.W., Eppers, C.L., Nakano, K., Stutz, C.E., Walline, R.E.
Published in [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (1991)
Published in [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (1991)
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Conference Proceeding