Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement
Fahed, M, Desplanque, L, Troadec, D, Patriarche, G, Wallart, X
Published in Nanotechnology (16.12.2016)
Published in Nanotechnology (16.12.2016)
Get full text
Journal Article
Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell
Khelifi, W, Coinon, C, Berthe, M, Troadec, D, Patriarche, G, Wallart, X, Grandidier, B, Desplanque, L
Published in Nanotechnology (12.04.2023)
Published in Nanotechnology (12.04.2023)
Get full text
Journal Article
In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate
Desplanque, L, Bucamp, A, Troadec, D, Patriarche, G, Wallart, X
Published in Nanotechnology (27.07.2018)
Published in Nanotechnology (27.07.2018)
Get full text
Journal Article
Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates
Desplanque, L., Bucamp, A., Troadec, D., Patriarche, G., Wallart, X.
Published in Journal of crystal growth (15.04.2019)
Published in Journal of crystal growth (15.04.2019)
Get full text
Journal Article
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
Sellier, H, Hackens, B, Pala, M G, Martins, F, Baltazar, S, Wallart, X, Desplanque, L, Bayot, V, Huant, S
Published in Semiconductor science and technology (01.06.2011)
Published in Semiconductor science and technology (01.06.2011)
Get full text
Journal Article
In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy
Bucamp, A, Coinon, C, Lepilliet, S, Troadec, D, Patriarche, G, Diallo, M H, Avramovic, V, Haddadi, K, Wallart, X, Desplanque, L
Published in Nanotechnology (02.04.2022)
Published in Nanotechnology (02.04.2022)
Get full text
Journal Article
Transport inefficiency in branched-out mesoscopic networks: an analog of the Braess paradox
Pala, M G, Baltazar, S, Liu, P, Sellier, H, Hackens, B, Martins, F, Bayot, V, Wallart, X, Desplanque, L, Huant, S
Published in Physical review letters (13.02.2012)
Published in Physical review letters (13.02.2012)
Get more information
Journal Article
Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE
Bucamp, A., Coinon, C., Codron, J.-L., Troadec, D., Wallart, X., Desplanque, L.
Published in Journal of crystal growth (15.04.2019)
Published in Journal of crystal growth (15.04.2019)
Get full text
Journal Article
Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III-V semiconductors
Post, L C, Xu, T, Franchina Vergel, N A, Tadjine, A, Lambert, Y, Vaurette, F, Yarekha, D, Desplanque, L, Stiévenard, D, Wallart, X, Grandidier, B, Delerue, C, Vanmaekelbergh, D
Published in Nanotechnology (12.04.2019)
Published in Nanotechnology (12.04.2019)
Get full text
Journal Article
Influence of nanoscale faceting on the tunneling properties of near broken gap InAs AlGaSb heterojunctions grown by selective area epitaxy
Desplanque, L, Fahed, M, Han, X, Chinni, V K, Troadec, D, Chauvat, M-P, Ruterana, P, Wallart, X
Published in Nanotechnology (21.11.2014)
Published in Nanotechnology (21.11.2014)
Get full text
Journal Article
Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness
Wang, Y., Ruterana, P., Desplanque, L., El Kazzi, S., Wallart, X.
Published in Journal of applied physics (15.01.2011)
Published in Journal of applied physics (15.01.2011)
Get full text
Journal Article
Imaging Coulomb islands in a quantum Hall interferometer
Hackens, B, Martins, F, Faniel, S, Dutu, C.A, Sellier, H, Huant, S, Pala, M, Desplanque, L, Wallart, X, Bayot, V
Published in Nature communications (27.07.2010)
Published in Nature communications (27.07.2010)
Get full text
Journal Article
Scanning gate spectroscopy of transport across a quantum Hall nano-island
Martins, F, Faniel, S, Rosenow, B, Pala, M G, Sellier, H, Huant, S, Desplanque, L, Wallart, X, Bayot, V, Hackens, B
Published in New journal of physics (01.01.2013)
Published in New journal of physics (01.01.2013)
Get full text
Journal Article
Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP
El Kazzi, S., Desplanque, L., Wallart, X., Wang, Y., Ruterana, P.
Published in Journal of applied physics (15.06.2012)
Published in Journal of applied physics (15.06.2012)
Get full text
Journal Article
High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
Get full text
Journal Article
Conference Proceeding
Coherent tunnelling across a quantum point contact in the quantum Hall regime
Martins, F, Faniel, S, Rosenow, B, Sellier, H, Huant, S, Pala, M G, Desplanque, L, Wallart, X, Bayot, V, Hackens, B
Published in Scientific reports (2013)
Published in Scientific reports (2013)
Get full text
Journal Article
Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications
Malmkvist, M., Lefebvre, E., Borg, M., Desplanque, L., Wallart, X., Dambrine, G., Bollaert, S., Grahn, J.
Published in IEEE transactions on microwave theory and techniques (01.12.2008)
Published in IEEE transactions on microwave theory and techniques (01.12.2008)
Get full text
Journal Article
Anisotropic transport properties in InAs/AlSb heterostructures
Moschetti, G., Zhao, H., Nilsson, P.-Å., Wang, S., Kalabukhov, A., Dambrine, G., Bollaert, S., Desplanque, L., Wallart, X., Grahn, J.
Published in Applied physics letters (13.12.2010)
Published in Applied physics letters (13.12.2010)
Get full text
Journal Article