Growth of GaN films on PLD-deposited TaC substrates
Kirchner, K.W., Derenge, M.A., Zheleva, T.S., Vispute, R.D., Jones, K.A.
Published in Journal of crystal growth (15.09.2010)
Published in Journal of crystal growth (15.09.2010)
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Journal Article
Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC
Jones, K.A., Wood, M.C., Zheleva, T.S., Kirchner, K.W., Derenge, M.A., Bolonikov, A., Sudarshan, T.S., Vispute, R.D., Hullavarad, S.S., Dhar, S.
Published in Journal of electronic materials (01.06.2008)
Published in Journal of electronic materials (01.06.2008)
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Journal Article
Al, B, and Ga ion-implantation doping of SiC
HANDY, Evan M, RAO, Mulpuri V, HOLLAND, O. W, CHI, P. H, JONES, K. A, DERENGE, M. A, VISPUTE, R. D, VENKATESAN, T
Published in Journal of electronic materials (01.11.2000)
Published in Journal of electronic materials (01.11.2000)
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Journal Article
Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications
Hullavarad, S S, Vispute, R D, Nagaraj, B, Kulkarni, V N
Published in Journal of electronic materials (01.04.2006)
Published in Journal of electronic materials (01.04.2006)
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Journal Article
A comparison of graphite and AlN caps used for annealing ion-implanted SiC
JONES, K. A, DERENGE, M. A, VISPUTE, R. D, SHAH, P. B, ZHELEVA, T. S, ERVIN, M. H, KIRCHNER, K. W, WOOD, M. C, THOMAS, C, SPENCER, M. G, HOLLAND, O. W
Published in Journal of electronic materials (01.06.2002)
Published in Journal of electronic materials (01.06.2002)
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Journal Article
Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications
Hullavarad, S. S., Vispute, R. D., Nagaraj, B., Kulkarni, V. N., Dhar, S., Venkatesan, T., Jones, K. A., Derenge, M., Zheleva, T., Ervin, M. H., Lelis, A., Scozzie, C. J., Habersat, D., Wickenden, A. E., Currano, L. J., Dubey, M.
Published in Journal of electronic materials (01.04.2006)
Published in Journal of electronic materials (01.04.2006)
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Journal Article
Characterization with TEM of AlN/GaN Heterostructures for Implant Activation Annealing
Zheleva, TS, Hager, CE, Jones, KA, Derenge, MA
Published in Microscopy and microanalysis (01.08.2008)
Published in Microscopy and microanalysis (01.08.2008)
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Journal Article
The properties of annealed AlN films deposited by pulsed laser deposition
Jones, K. A., Derenge, M. A., Zheleva, T. S., Kirchner, K. W., Ervin, M. H., Wood, M. C., Vispute, R. D., Sharma, R. P., Venkatesan, T.
Published in Journal of electronic materials (01.03.2000)
Published in Journal of electronic materials (01.03.2000)
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Journal Article
Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes
Noor Mohammad, Z.-F. Fan, A. E. Bot, S.
Published in Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties. (01.05.2001)
Published in Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties. (01.05.2001)
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Journal Article
Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN
Hogan, K., Tozier, S., Rocco, E., Mahaboob, I., Meyers, V., McEwen, B., Shahedipour-Sandvik, F., Tompkins, R., Derenge, M., Jones, Kenneth, Shevelev, M., Sklyar, V., Lang, A., Hart, J., Taheri, M., Reshchikov, M.
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
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Conference Proceeding
Achieving Low Doped (<10 16 ) GaN with Large Breakdown Voltages (~1000 V)
Tompkins, Randy P., Smith, J. R., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Jones, Kenneth A., Metzger, R., Leach, Jacob, Suvana, Puneet, Tungare, Mihir, Shahedipou-Sandvik, Fatemeh
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
GaN Power Schottky Diodes
Tompkins, Randy P., Smith, Joshua R., Zhou, Shuai, Kirchner, Kevin W., Derenge, Michael A., Jones, Kenneth A., Leach, Jacob H., Mulholland, Greg, Udwary, Kevin, Preble, Edward, Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, F.
Published in ECS transactions (27.04.2012)
Published in ECS transactions (27.04.2012)
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Journal Article
Structural and Chemical Comparison of Graphite and BN/AIN Caps Used for Annealing Ion Implanted SiC
Jones, KA, Wood, M C, Zheleva, T S, Kirchner, K W, Derenge, M A, Bolonikov, A, Sudarshan, T S, Vispute, R D, Hullavarad, S S, Dhar, S
Published in Journal of electronic materials (01.06.2008)
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Published in Journal of electronic materials (01.06.2008)
Journal Article
A study of metal-Ga ohmic metallizations to p-type 6H-SiC
Kanyogoro, E.N., Liu, L., Iliadis, A.A., Jones, K.A., Wood, M.C., Derenge, M., Loughran, T.C.
Published in 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) (2001)
Published in 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) (2001)
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Conference Proceeding
A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere
Derenge, M.A., Jones, K.A., Kirchner, K.W., Ervin, M.H., Zheleva, T.S., Hullavarad, S., Vispute, R.D.
Published in Solid-state electronics (01.10.2004)
Published in Solid-state electronics (01.10.2004)
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Journal Article
Advances in pulsed-laser-deposited AlN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications: Group III Nitrides, SiC, and ZnO
HULLAVARAD, S. S, VISPUTE, R. D, LELIS, A, SCOZZIE, C. J, HABERSAT, D, WICKENDEN, A. E, CURRANO, L. J, DUBEY, M, NAGARAJ, B, KULKARNI, V. N, DHAR, S, VENKATESAN, T, JONES, K. A, DERENGE, M, ZHELEVA, T, ERVIN, M. H
Published in Journal of electronic materials (2006)
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Published in Journal of electronic materials (2006)
Journal Article