Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs
Vandooren, A., Leonelli, D., Rooyackers, R., Hikavyy, A., Devriendt, K., Demand, M., Loo, R., Groeseneken, G., Huyghebaert, C.
Published in Solid-state electronics (01.05.2013)
Published in Solid-state electronics (01.05.2013)
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Journal Article
Conference Proceeding
Temperature and RF Current Sensor Wafers for Plasma Etching
Milenin, A. P., Demand, M., Boullart, W., Arleo, P.
Published in Journal of the Electrochemical Society (01.01.2012)
Published in Journal of the Electrochemical Society (01.01.2012)
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Journal Article
Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22nm node on a 6T-SRAM cell
Altamirano-Sánchez, E., Paraschiv, V., Demand, M., Boullart, W.
Published in Microelectronic engineering (01.09.2011)
Published in Microelectronic engineering (01.09.2011)
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Journal Article
Ferromagnetic resonance studies of nickel and permalloy nanowire arrays
Demand, M, Encinas-Oropesa, A, Kenane, S, Ebels, U, Huynen, I, Piraux, L
Published in Journal of magnetism and magnetic materials (01.08.2002)
Published in Journal of magnetism and magnetic materials (01.08.2002)
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Challenges in using optical lithography for the building of a 22 nm node 6T-SRAM cell
Ercken, M., Altamirano-Sanchez, E., Baerts, C., Brus, S., De Backer, J., Delvaux, C., Demand, M., Horiguchi, N., Locorotondo, S., Vandeweyer, T., Veloso, A., Verhaegen, S.
Published in Microelectronic engineering (01.05.2010)
Published in Microelectronic engineering (01.05.2010)
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Conference Proceeding
Challenges in using optical lithography for the building of a 22nm node 6T-SRAM cell
Ercken, M., Altamirano-Sanchez, E., Baerts, C., Brus, S., De Backer, J., Delvaux, C., Demand, M., Horiguchi, N., Locorotondo, S., Vandeweyer, T., Veloso, A., Verhaegen, S.
Published in Microelectronic engineering (01.05.2010)
Published in Microelectronic engineering (01.05.2010)
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Journal Article
Effect of the pH on the microstructure and magnetic properties of electrodeposited cobalt nanowires
Encinas, A., Demand, M., George, J.-M., Piraux, L.
Published in IEEE transactions on magnetics (01.09.2002)
Published in IEEE transactions on magnetics (01.09.2002)
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Journal Article
Conference Proceeding
Vortex sates stability in circular Co(0001) dots
Buda, L D, Prejbeanu, I L, Demand, M, Ebels, U, Ounadjela, K
Published in IEEE transactions on magnetics (01.07.2001)
Published in IEEE transactions on magnetics (01.07.2001)
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Journal Article
Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Veloso, A., Yu, H.Y., Lauwers, A., Chang, S.Z., Adelmann, C., Onsia, B., Demand, M., Brus, S., Vrancken, C., Singanamalla, R., Lehnen, P., Kittl, J., Kauerauf, T., Vos, R., O′Sullivan, B.J., Van Elshocht, S., Mitsuhashi, R., Whittemore, G., Yin, K.M., Niwa, M., Hoffmann, T., Absil, P., Jurczak, M., Biesemans, S.
Published in Solid-state electronics (01.09.2008)
Published in Solid-state electronics (01.09.2008)
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Conference Proceeding
Implementation of high- k and metal gate materials for the 45 nm node and beyond: gate patterning development
Beckx, S., Demand, M., Locorotondo, S., Henson, K., Claes, M., Paraschiv, V., Shamiryan, D., Jaenen, P., Boullart, W., Degendt, S., Biesemans, S., Vanhaelemeersch, S., Vertommen, J., Coenegrachts, B.
Published in Microelectronics and reliability (01.05.2005)
Published in Microelectronics and reliability (01.05.2005)
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Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs
Veloso, A., Witters, L., Demand, M., Ferain, I., Son, N.J., Kaczer, B., Roussel, P.J., Simoen, E., Kauerauf, T., Adelmann, C., Brus, S., Richard, O., Bender, H., Conard, T., Vos, R., Rooyackers, R., Van Elshocht, S., Collaert, N., De Meyer, K., Biesemans, S., Jurczak, M.
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Published in 2008 Symposium on VLSI Technology (01.06.2008)
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Conference Proceeding
Vortex states stability in circular Co(0001) dots
Buda, L.D., Prejbeanu, I.L., Demand, M., Ebels, U., Punadjela, K.
Published in IEEE transactions on magnetics (01.07.2001)
Published in IEEE transactions on magnetics (01.07.2001)
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Journal Article
Conference Proceeding
Structure and magnetic properties of epitaxial cobalt islands
Demand, M., Hehn, M., Stamps, R.L., Meny, C., Ounadjela, K.
Published in The European physical journal. B, Condensed matter physics (01.02.2002)
Published in The European physical journal. B, Condensed matter physics (01.02.2002)
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Journal Article
High yield sub-0.1µm2 6T-SRAM cells, featuring high-k/metal-gate finfet devices, double gate patterning, a novel fin etch strategy, full-field EUV lithography and optimized junction design & layout
Horiguchi, N, Demuynck, S, Ercken, M, Locorotondo, S, Lazzarino, F, Altamirano, E, Huffman, C, Brus, S, Demand, M, Struyf, H, De Backer, J, Hermans, J, Delvaux, C, Vandeweyer, T, Baerts, C, Mannaert, G, Truffert, V, Verluijs, J, Alaerts, W, Dekkers, H, Ong, P, Heylen, N, Kellens, K, Volders, H, Hikavyy, A, Vrancken, C, Rakowski, M, Verhaegen, S, Vandenberghe, G, Beyer, G, Lauwers, A, Absil, P, Hoffman, T, Ronse, K, Biesemans, S
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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Conference Proceeding
Capping-metal gate integration technology for multiple-VT CMOS in MuGFETs
Veloso, A., Witters, L., Demand, M., Ferain, I., Son, N.J., Kaczer, B., Roussel, P.J., Adelmann, C., Brus, S., Richard, O., Bender, H., Conard, T., Vos, R., Rooyackers, R., Van Elshocht, S., Collaert, N., De Meyer, K., Biesemans, S., Jurczak, M.
Published in 2008 IEEE International SOI Conference (01.10.2008)
Published in 2008 IEEE International SOI Conference (01.10.2008)
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Conference Proceeding
A new complementary hetero-junction vertical Tunnel-FET integration scheme
Rooyackers, R., Vandooren, A., Verhulst, A. S., Walke, A., Devriendt, K., Locorotondo, S., Demand, M., Bryce, G., Loo, R., Hikavyy, A., Vandeweyer, T., Huyghebaert, C., Collaert, N., Thean, A.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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