Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression
Kim, Donguk, Kim, Je-Hyuk, Choi, Woo Sik, Yang, Tae Jun, Jang, Jun Tae, Belmonte, Attilio, Rassoul, Nouredine, Subhechha, Subhali, Delhougne, Romain, Kar, Gouri Sankar, Lee, Wonsok, Cho, Min Hee, Ha, Daewon, Kim, Dae Hwan
Published in Scientific reports (12.11.2022)
Published in Scientific reports (12.11.2022)
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Transient Characteristics of the Reset Programming of a Phase-Change Line Cell and the Effect of the Reset Parameters on the Obtained State
Goux, L., Gille, T., Castro, D.T., Hurkx, G., Lisoni, J.G., Delhougne, R., Gravesteijn, D.J., De Meyer, K., Attenborough, K., Wouters, D.J.
Published in IEEE transactions on electron devices (01.07.2009)
Published in IEEE transactions on electron devices (01.07.2009)
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Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime
Cho, Yongjun, Kang, Bo Soo, Kumbhare, Pankaj, Delhougne, Romain, Nyns, Laura, Mao, Ming, Goux, Ludovic, Kar, Gouri Sankar, Belmonte, Attilio
Published in Solid-state electronics (01.09.2024)
Published in Solid-state electronics (01.09.2024)
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Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor
Tang, Hongwei, Dekkers, Harold, Rassoul, Nouredine, Sutar, Surajit, Subhechha, Subhali, Afanas'ev, Valeri, Van Houdt, Jan, Delhougne, Romain, Kar, Gouri Sankar, Belmonte, Attilio
Published in IEEE transactions on electron devices (01.01.2024)
Published in IEEE transactions on electron devices (01.01.2024)
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Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch
Ravsher, Taras, Garbin, Daniele, Fantini, Andrea, Degraeve, Robin, Clima, Sergiu, Donadio, Gabriele Luca, Kundu, Shreya, Hody, Hubert, Devulder, Wouter, Van Houdt, Jan, Afanas'ev, Valeri, Delhougne, Romain, Kar, Gouri Sankar
Published in IEEE transactions on electron devices (01.05.2023)
Published in IEEE transactions on electron devices (01.05.2023)
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Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors
Lee, Sumi, Ronchi, Nicolo, Bizindavyi, Jasper, Popovici, Mihaela I., Banerjee, Kaustuv, Walke, Amey, Delhougne, Romain, Houdt, Jan Van, Shin, Changhwan
Published in IEEE transactions on electron devices (01.05.2023)
Published in IEEE transactions on electron devices (01.05.2023)
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Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal-Ferroelectric-Metal Capacitors
Walke, Amey M., Popovici, Mihaela I., Banerjee, Kaustuv, Clima, Sergiu, Kumbhare, Pankaj, Desmet, Johan, Meersschaut, Johan, Bosch, Geert Van den, Delhougne, Romain, Kar, Gouri Sankar, Houdt, Jan Van
Published in IEEE transactions on electron devices (01.08.2022)
Published in IEEE transactions on electron devices (01.08.2022)
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Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures
Tang, Hongwei, Belmonte, Attilio, Lin, Dennis, Afanas'ev, Valeri, Verdonck, Patrick, Chasin, Adrian, Dekkers, Harold, Delhougne, Romain, Van Houdt, Jan, Sankar Kar, Gouri
Published in Solid-state electronics (01.04.2024)
Published in Solid-state electronics (01.04.2024)
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A combinatorial study of SiGeAsTe thin films for application as an Ovonic threshold switch selector
Devulder, Wouter, Garbin, Daniele, Clima, Sergiu, Donadio, Gabriele Luca, Fantini, Andrea, Govoreanu, Bogdan, Detavernier, Christophe, Chen, Larry, Miller, Michael, Goux, Ludovic, Elshocht, Sven Van, Swerts, Johan, Delhougne, Romain, Kar, Gouri Sankar
Published in Thin solid films (01.07.2022)
Published in Thin solid films (01.07.2022)
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Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching
Zhou, Xue, Hu, Zeyu, Chai, Zheng, Zhang, Weidong, Clima, Sergiu, Degraeve, Robin, Zhang, Jian Fu, Fantini, Andrea, Garbin, Daniele, Delhougne, Romain, Goux, Ludovic, Kar, Gouri Sankar
Published in IEEE electron device letters (01.07.2022)
Published in IEEE electron device letters (01.07.2022)
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New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors
Hu, Zeyu, Zhang, Weidong, Degraeve, Robin, Garbin, Daniele, Chai, Zheng, Saxena, Nishant, Freitas, Pedro, Fantini, Andrea, Ravsher, Taras, Clima, Sergiu, Zhang, Jian Fu, Delhougne, Romain, Goux, Ludovic, Kar, Gouri
Published in IEEE transactions on electron devices (01.02.2023)
Published in IEEE transactions on electron devices (01.02.2023)
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Carbon-Based Liner for RESET Current Reduction in Self-Heating Phase- Change Memory Cells
De Proft, Anabel, Garbin, Daniele, Donadio, Gabriele Luca, Hody, Hubert, Witters, Thomas, Lodewijks, Kristof, Rottenberg, Xavier, Goux, Ludovic, Delhougne, Romain, Kar, Gouri Sankar
Published in IEEE transactions on electron devices (01.10.2020)
Published in IEEE transactions on electron devices (01.10.2020)
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The Impact of IGZO Channel Composition on DRAM Transistor Performance
Kruv, Anastasiia, Van Setten, M. J., Dekkers, Hendrik F. W., Lorant, Christophe, Verreck, Devin, Smets, Quentin, Venkataramana, Bhuvaneshwari Yengula, Belmonte, Attilio, Subhechha, Subhali, Chasin, Adrian Vaisman, Delhougne, Romain, Kar, Gouri Sankar
Published in IEEE transactions on electron devices (01.09.2023)
Published in IEEE transactions on electron devices (01.09.2023)
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Ovonic Threshold Switch Chalcogenides: Connecting the First-Principles Electronic Structure to Selector Device Parameters
Clima, Sergiu, Ravsher, Taras, Garbin, Daniele, Degraeve, Robin, Fantini, Andrea, Delhougne, Romain, Kar, Gouri Sankar, Pourtois, Geoffrey
Published in ACS applied electronic materials (24.01.2023)
Published in ACS applied electronic materials (24.01.2023)
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CAYMAX MATHIEU, DELHOUGNE ROMAIN, PARK YONGKOOK, HAIDER ALI, GIVENS MICHAEL EUGENE
Year of Publication 29.03.2022
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Hsu, P.-C., Simoen, Eddy Roger, Lin, D, Stesmans, Andre, Goux, Laurent, Delhougne, Romain, Kar, Gouri Sankar
Published in ECS transactions (03.07.2019)
Published in ECS transactions (03.07.2019)
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Hsu, P.-C., Simoen, Eddy Roger, Lin, D, Stesmans, Andre, Goux, Laurent, Delhougne, Romain, Kar, Gouri Sankar
Published in ECS transactions (03.07.2019)
Published in ECS transactions (03.07.2019)
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Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications
Oh, Hyungrock, Belmonte, Attilio, Perumkunnil, Manu, Mitard, Jerome, Rassoul, Nouredine, Donadio, Gabriele Luca, Delhougne, Romain, Furnemont, Arnaud, Kar, Gouri Sankar, Dehaene, Wim
Published in ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) (13.09.2021)
Published in ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) (13.09.2021)
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