Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers
Matsukura, Yusuke, Inazu, Tetsuhiko, Pernot, Cyril, Shibata, Naoki, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Amano, Hiroshi
Published in Applied physics express (01.08.2021)
Published in Applied physics express (01.08.2021)
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Journal Article
Experimental demonstration of GaN IMPATT diode at X-band
Kawasaki, Seiya, Ando, Yuto, Deki, Manato, Watanabe, Hirotaka, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Arai, Manabu, Amano, Hiroshi
Published in Applied physics express (01.04.2021)
Published in Applied physics express (01.04.2021)
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Journal Article
Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching
Kumabe, Takeru, Ando, Yuto, Watanabe, Hirotaka, Deki, Manato, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
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Journal Article
Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
Sato, Shin-ichiro, Li, Shuo, Greentree, Andrew D., Deki, Manato, Nishimura, Tomoaki, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Gibson, Brant C., Ohshima, Takeshi
Published in Scientific reports (08.12.2022)
Published in Scientific reports (08.12.2022)
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Journal Article
Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions
Jadhav, Aakash, Ozawa, Takashi, Baratov, Ali, Asubar, Joel T., Kuzuhara, Masaaki, Wakejima, Akio, Yamashita, Shunpei, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Roy, Sourajeet, Sarkar, Biplab
Published in IEEE transactions on electron devices (01.12.2021)
Published in IEEE transactions on electron devices (01.12.2021)
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Journal Article
Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates
Usami, Shigeyoshi, Tanaka, Atsushi, Fukushima, Hayata, Ando, Yuto, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors
Uemura, Keisuke, Deki, Manato, Honda, Yoshio, Amano, Hiroshi, Sato, Taketomo
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
Ye, Zheng, Nitta, Shugo, Nagamatsu, Kentaro, Fujimoto, Naoki, Kushimoto, Maki, Deki, Manato, Tanaka, Atsushi, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi
Published in Journal of crystal growth (15.06.2019)
Published in Journal of crystal growth (15.06.2019)
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Journal Article
Morphological study of InGaN on GaN substrate by supersaturation
Liu, Zhibin, Nitta, Shugo, Robin, Yoann, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi
Published in Journal of crystal growth (15.02.2019)
Published in Journal of crystal growth (15.02.2019)
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Journal Article
Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics
Yoshino, Michitaka, Ando, Yuto, Deki, Manato, Toyabe, Toru, Kuriyama, Kazuo, Honda, Yoshio, Nishimura, Tomoaki, Amano, Hiroshi, Kachi, Tetsu, Nakamura, Tohru
Published in Materials (26.02.2019)
Published in Materials (26.02.2019)
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Journal Article
Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
Takahashi, Masahiro, Tanaka, Atsushi, Ando, Yuto, Watanabe, Hirotaka, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Shima, Kohei, Kojima, Kazunobu, Chichibu, Shigefusa F., Chen, Kevin J., Amano, Hiroshi
Published in physica status solidi (b) (01.04.2020)
Published in physica status solidi (b) (01.04.2020)
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Journal Article
Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching
Yamada, Takehiro, Ando, Yuto, Watanabe, Hirotaka, Furusawa, Yuta, Tanaka, Atsushi, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Suda, Jun, Amano, Hiroshi
Published in Applied physics express (01.03.2021)
Published in Applied physics express (01.03.2021)
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Journal Article
Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency
Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P, Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi
Published in Sensors (Basel, Switzerland) (21.11.2019)
Published in Sensors (Basel, Switzerland) (21.11.2019)
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Journal Article
Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
Liu, Zhibin, Nitta, Shugo, Usami, Shigeyoshi, Robin, Yoann, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi
Published in Journal of crystal growth (01.03.2019)
Published in Journal of crystal growth (01.03.2019)
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Journal Article
Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes
Usami, Shigeyoshi, Miyagoshi, Ryosuke, Tanaka, Atsushi, Nagamatsu, Kentaro, Kushimoto, Maki, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi
Published in Physica status solidi. A, Applications and materials science (01.08.2017)
Published in Physica status solidi. A, Applications and materials science (01.08.2017)
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Journal Article
V-shaped dislocations in a GaN epitaxial layer on GaN substrate
Tanaka, Atsushi, Nagamatsu, Kentaro, Usami, Shigeyoshi, Kushimoto, Maki, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Bockowski, Michal, Amano, Hiroshi
Published in AIP advances (01.09.2019)
Published in AIP advances (01.09.2019)
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Journal Article
Optical properties of neodymium ions in nanoscale regions of gallium nitride
Sato, Shin-ichiro, Deki, Manato, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Nishimura, Tomoaki, Gibson, Brant C., Greentree, Andrew D., Amano, Hiroshi, Ohshima, Takeshi
Published in Optical materials express (01.10.2020)
Published in Optical materials express (01.10.2020)
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Journal Article
Effect of V/III ratio on the surface morphology and electrical properties of m–plane (101¯0) GaN homoepitaxial layers
Barry, Ousmane I, Tanaka, Atsushi, Nagamatsu, Kentaro, Bae, Si-Young, Lekhal, Kaddour, Matsushita, Junya, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi
Published in Journal of crystal growth (15.06.2017)
Published in Journal of crystal growth (15.06.2017)
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Journal Article
Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs
Jadhav, Aakash, Ozawa, Takashi, Baratov, Ali, Asubar, Joel T., Kuzuhara, Masaaki, Wakejima, Akio, Yamashita, Shunpei, Deki, Manato, Honda, Yoshio, Roy, Sourajeet, Amano, Hiroshi, Sarkar, Biplab
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
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Journal Article
An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs using Rational Functions and Dependent Current Sources
Jadhav, Aakash, Ozawa, Takashi, Baratov, Ali, Asubar, Joel T., Kuzuhara, Masaaki, Wakejima, Akio, Yamashita, Shunpei, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Roy, Sourajeet, Sarkar, Biplab
Published in IEEE journal of the Electron Devices Society (2022)
Published in IEEE journal of the Electron Devices Society (2022)
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Journal Article