Characterization of high-purity Si-doped molecular beam epitaxial GaAs
SKROMME, B. J, BOSE, S. S, LEE, B, LOW, T. S, LEPKOWSKI, T. R, DEJULE, R. Y, STILLMAN, G. E, HWANG, J. C. M
Published in Journal of applied physics (15.12.1985)
Published in Journal of applied physics (15.12.1985)
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Multiple-wavelength operation of a laser-diode array coupled to an external cavity
Papen, G C, Murphy, G M, Brady, D J, Howe, A T, Dallesasse, J M, Dejule, R Y, Holmgren, D J
Published in Optics letters (01.09.1993)
Published in Optics letters (01.09.1993)
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Depletion corrections in variable temperature Hall measurements
LEPKOWSKI, T. R, DEJULE, R. Y, TIEN, N. C, KIM, M. H, STILLMAN, G. E
Published in Journal of applied physics (15.05.1987)
Published in Journal of applied physics (15.05.1987)
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Measurements of deep levels in high-purity molecular beam epitaxial GaAs
DEJULE, R. Y, HAASE, M. A, STILLMAN, G. E, PALMATEER, S. C, HWANG, J. C. M
Published in Journal of applied physics (15.06.1985)
Published in Journal of applied physics (15.06.1985)
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Implantation and annealing studies of laterally seeded recrystallized silicon on silicon dioxide
BANERJEE, S. K, TONG, R. Y, LEE, B, DEJULE, R. Y, STREETMAN, B. G, LAM, H. W
Published in Journal of the Electrochemical Society (01.01.1984)
Published in Journal of the Electrochemical Society (01.01.1984)
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Constant capacitance DLTS circuit for measuring high purity semiconductors
DeJule, R.Y., Haase, M.A., Ruby, D.S., Stillman, G.E.
Published in Solid-state electronics (01.01.1985)
Published in Solid-state electronics (01.01.1985)
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Planar Be-implanted GaAs junction formation using swept-line electron beam annealing
Banerjee, S.K., DeJule, R.Y., Soda, K.J., Streetman, B.G.
Published in IEEE transactions on electron devices (01.12.1983)
Published in IEEE transactions on electron devices (01.12.1983)
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