Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaquiere, C., DeJaeger, J.-C., Cico, K., Frohlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmik, J.
Published in IEEE electron device letters (01.10.2009)
Published in IEEE electron device letters (01.10.2009)
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Journal Article
Small-signal characteristics of AlInN/GaN HEMTs
MEDJDOUB, F, CARLIN, J.-F, GONSCHOREK, M, PY, M. A, GRANDJEAN, N, VANDENBROUCK, S, GAQUIERE, C, DEJAEGER, J. C, KOHN, E
Published in Electronics letters (2006)
Published in Electronics letters (2006)
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Journal Article
MBE growth of ALGaN/GaN HEMTS on resistive Si(1 1 1) substrate with RF small signal and power performances
Cordier, Y., Semond, F., Lorenzini, P., Grandjean, N., Natali, F., Damilano, B., Massies, J., Hoël, V., Minko, A., Vellas, N., Gaquière, C., DeJaeger, J.C., Dessertene, B., Cassette, S., Surrugue, M., Adam, D., Grattepain, J-C., Aubry, R., Delage, S.L.
Published in Journal of crystal growth (01.04.2003)
Published in Journal of crystal growth (01.04.2003)
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Journal Article
Conference Proceeding
RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate
Lecourt, F, Ketteniss, N, Behmenburg, H, Defrance, N, Hoel, V, Eickelkamp, M, Vescan, A, Giesen, C, Heuken, M, DeJaeger, J C
Published in Electronics letters (03.02.2011)
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Published in Electronics letters (03.02.2011)
Journal Article
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates
Sghaier, N., Trabelsi, M., Yacoubi, N., Bluet, J.M., Souifi, A., Guillot, G., Gaquière, C., DeJaeger, J.C.
Published in Microelectronics (01.04.2006)
Published in Microelectronics (01.04.2006)
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Journal Article
Small-signal characteristics of AlInN/GaN HEMTs
Medjdoub, F, Carlin, J-F, Gonschorek, M, Py, M A, Grandjean, N, Vandenbrouck, S, Gaquière, C, Dejaeger, J C, Kohn, E
Published in Electronics letters (22.06.2006)
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Published in Electronics letters (22.06.2006)
Journal Article
Performance of Unstuck - Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10 GHz
Gerbedoen, J.-C., Soltani, A., Defrance, N., Rousseau, M., Gaquiere, C., De jaeger, J.-C., Joblot, S., Cordier, Y.
Published in 2008 European Microwave Integrated Circuit Conference (01.10.2008)
Published in 2008 European Microwave Integrated Circuit Conference (01.10.2008)
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Conference Proceeding
V-band monolithic AlGaAs/InGaAs/GaAs PM-HFET mixers
Kolanowski, C., Allam, R., De Jaeger, J. C., Bourne-Yaonaba, P., Dourlens, C., Favre, J.
Published in Microwave and optical technology letters (20.06.1997)
Published in Microwave and optical technology letters (20.06.1997)
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Journal Article
MBE growth of high quality AlGaN/GaN HEMTs on resistive Si[111] substrate with RF small signal and power performances
Cordier, Y., Semond, F., Lorenzini, P., Grandjean, N., Natali, F., Damilano, B., Massies, J., Hoel, V., Minko, A., Vellas, N., Gaquiere, C., DeJaeger, J.C., Dessertene, B., Cassette, S., Surrugue, M., Adam, D., Grattepain, J.-C., Delage, S.L.
Published in International Conference on Molecular Bean Epitaxy (2002)
Published in International Conference on Molecular Bean Epitaxy (2002)
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Conference Proceeding
High efficiency GalnAs/Inp heterojunction IMPATT diodes
De Jaeger, J-C, Kozlowski, R, SALMER, G
Published in IEEE transactions on electron devices (01.07.1983)
Published in IEEE transactions on electron devices (01.07.1983)
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Journal Article