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The performance and reliability of 0.4 micron MOSFET's with gate oxynitrides grown by rapid thermal processing using mixtures of N2O and O2

The performance and reliability of 0.4 micron MOSFET's with gate oxynitrides grown by rapid thermal processing using mixtures of N2O and O2

by OKADA, Y, TOBIN, P. J, RUSHBROOK, P, DEHART, W. L
Published in IEEE transactions on electron devices (01.02.1994)

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Journal Article

The performance and reliability of 0.4 micron MOSFET' s with gateoxynitrides grown by rapid thermal processing using mixtures of N(2)O and O(2)

The performance and reliability of 0.4 micron MOSFET' s with gateoxynitrides grown by rapid thermal processing using mixtures of N(2)O and O(2)

by Okada, Y, Tobin, P J, Rushbrook, P, DeHart, W L
Published in IEEE transactions on electron devices (01.02.1994)

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Journal Article

The performance and reliability of 0.4 micron MOSFET''s with gateoxynitrides grown by rapid thermal processing using mixtures of N(2)O and O(2)

The performance and reliability of 0.4 micron MOSFET''s with gateoxynitrides grown by rapid thermal processing using mixtures of N(2)O and O(2)

by Okada, Y, Tobin, P J, Rushbrook, P, DeHart, W L
Published in IEEE transactions on electron devices (01.02.1994)

Get full text

Journal Article