Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures
Tian-Li Wu, Bakeroot, Benoit, Hu Liang, Posthuma, Niels, Shuzhen You, Ronchi, Nicolo, Stoffels, Steve, Marcon, Denis, Decoutere, Stefaan
Published in IEEE electron device letters (01.12.2017)
Published in IEEE electron device letters (01.12.2017)
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Journal Article
Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates
Chen, Zequan, Uren, Michael J., Huang, Peng, Sanyal, Indraneel, Smith, Matthew D., Vohra, Anurag, Kumar, Sujit, Decoutere, Stefaan, Bakeroot, Benoit, Kuball, Martin
Published in Applied physics letters (26.08.2024)
Published in Applied physics letters (26.08.2024)
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Journal Article
Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs
Rackauskas, Ben, Uren, Michael J., Stoffels, Steve, Ming Zhao, Decoutere, Stefaan, Kuball, Martin
Published in IEEE transactions on electron devices (01.05.2018)
Published in IEEE transactions on electron devices (01.05.2018)
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Journal Article
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs
Bisi, Davide, Meneghini, Matteo, Marino, Fabio Alessio, Marcon, Denis, Stoffels, Steve, Van Hove, Marleen, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE electron device letters (01.10.2014)
Published in IEEE electron device letters (01.10.2014)
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Journal Article
Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates
Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Bakeroot, Benoit, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan
Published in IEEE transactions on electron devices (01.05.2018)
Published in IEEE transactions on electron devices (01.05.2018)
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Journal Article
CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
Van Hove, M., Boulay, S., Bahl, S. R., Stoffels, S., Xuanwu Kang, Wellekens, D., Geens, K., Delabie, A., Decoutere, S.
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
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Journal Article
Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Geens, Karen, Guo, Weiming, You, Shuzhen, Stoffels, Steve, Lempinen, Vesa-Pekka, Sormunen, Jaakko, Groeseneken, Guido, Decoutere, Stefaan
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Gonçalez Filho, Walter, Borga, Matteo, Geens, Karen, Cingu, Deepthi, Chatterjee, Urmimala, Banerjee, Sourish, Vohra, Anurag, Han, Han, Minj, Albert, Hahn, Herwig, Marx, Matthias, Fahle, Dirk, Bakeroot, Benoit, Decoutere, Stefaan
Published in Scientific reports (23.09.2023)
Published in Scientific reports (23.09.2023)
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Journal Article
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Mukherjee, Kalparupa, De Santi, Carlo, Borga, Matteo, Geens, Karen, You, Shuzhen, Bakeroot, Benoit, Decoutere, Stefaan, Diehle, Patrick, Hübner, Susanne, Altmann, Frank, Buffolo, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in Materials (29.04.2021)
Published in Materials (29.04.2021)
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Journal Article
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate
Bisi, Davide, Meneghini, Matteo, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Wu, Tian-Li, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Journal Article
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
Mukherjee, Kalparupa, De Santi, Carlo, Borga, Matteo, You, Shuzhen, Geens, Karen, Bakeroot, Benoit, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in Materials (23.10.2020)
Published in Materials (23.10.2020)
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Journal Article
Integration of GaN analog building blocks on p-GaN wafers for GaN ICs
Li, Xiangdong, Geens, Karen, Amirifar, Nooshin, Zhao, Ming, You, Shuzhen, Posthuma, Niels, Liang, Hu, Groeseneken, Guido, Decoutere, Stefaan
Published in Journal of semiconductors (01.02.2021)
Published in Journal of semiconductors (01.02.2021)
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Journal Article
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
Wang, Jie, Chen, Zhanfei, You, Shuzhen, Bakeroot, Benoit, Liu, Jun, Decoutere, Stefaan
Published in Micromachines (Basel) (15.02.2021)
Published in Micromachines (Basel) (15.02.2021)
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Journal Article
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p + n - n Diodes: The Road to Reliable Vertical MOSFETs
Mukherjee, Kalparupa, De Santi, Carlo, Buffolo, Matteo, Borga, Matteo, You, Shuzhen, Geens, Karen, Bakeroot, Benoit, Decoutere, Stefaan, Gerosa, Andrea, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in Micromachines (Basel) (16.04.2021)
Published in Micromachines (Basel) (16.04.2021)
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Journal Article
Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates
Van Hove, Marleen, Posthuma, Niels, Geens, Karen, Wellekens, Dirk, Li, Xiangdong, Decoutere, Stefaan
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates
Su, Jie, Posthuma, Niels, Wellekens, Dirk, Saripalli, Yoga N., Decoutere, Stefaan, Arif, Ronald, Papasouliotis, George D.
Published in Journal of electronic materials (01.12.2016)
Published in Journal of electronic materials (01.12.2016)
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Journal Article
Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage
Srivastava, Puneet, Das, Jo, Visalli, Domenica, Derluyn, Joff, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Geens, Karen, Kai Cheng, Degroote, Stefan, Leys, Maarten, Germain, Marianne, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf
Published in IEEE electron device letters (01.08.2010)
Published in IEEE electron device letters (01.08.2010)
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