Reliability of p-GaN Gate HEMTs in Reverse Conduction
Cingu, Deepthi, Li, Xiangdong, Bakeroot, Benoit, Amirifar, Nooshin, Geens, Karen, Jacobs, Kristof J. P., Zhao, Ming, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan
Published in IEEE transactions on electron devices (01.02.2021)
Published in IEEE transactions on electron devices (01.02.2021)
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Journal Article
Influence of GaN- and Si3N4-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination
Acurio, Eliana, Crupi, Felice, Ronchi, Nicolo, De Jaeger, Brice, Bakeroot, Benoit, Decoutere, Stefaan, Trojman, Lionel
Published in IEEE transactions on electron devices (01.02.2019)
Published in IEEE transactions on electron devices (01.02.2019)
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Journal Article
Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy
Hsu, Po-Chun, Simoen, Eddy, Liang, Hu, De Jaeger, Brice, Bakeroot, Benoit, Wellekens, Dirk, Decoutere, Stefaan
Published in Physica status solidi. A, Applications and materials science (01.12.2021)
Published in Physica status solidi. A, Applications and materials science (01.12.2021)
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Journal Article
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, Kalparupa, Borga, Matteo, Ruzzarin, Maria, De Santi, Carlo, Stoffels, Steve, You, Shuzhen, Geens, Karen, Liang, Hu, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in Applied physics express (01.02.2020)
Published in Applied physics express (01.02.2020)
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Journal Article
Experimental Benchmarking of Electrical Methods and \mu -Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs
Sodan, Vice, Kosemura, Daisuke, Stoffels, Steve, Oprins, Herman, Baelmans, Martine, Decoutere, Stefaan, De Wolf, Ingrid
Published in IEEE transactions on electron devices (01.06.2016)
Published in IEEE transactions on electron devices (01.06.2016)
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Journal Article
The Impact of Ti/Al Contacts on AlGaN/GaN HEMT Vertical Leakage and Breakdown
Rackauskas, Ben, Uren, Michael J., Stoffels, Steve, Ming Zhao, Bakeroot, Benoit, Decoutere, Stefaan, Kuball, Martin
Published in IEEE electron device letters (01.10.2018)
Published in IEEE electron device letters (01.10.2018)
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Journal Article
Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs
Marcon, Denis, Meneghesso, Gaudenzio, Tian-Li Wu, Stoffels, Steve, Meneghini, Matteo, Zanoni, Enrico, Decoutere, Stefaan
Published in IEEE transactions on electron devices (01.10.2013)
Published in IEEE transactions on electron devices (01.10.2013)
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Journal Article
Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination
Jie Hu, Stoffels, Steve, Lenci, Silvia, De Jaeger, Brice, Ronchi, Nicolo, Tallarico, Andrea Natale, Wellekens, Dirk, Shuzhen You, Bakeroot, Benoit, Groeseneken, Guido, Decoutere, Stefaan
Published in IEEE transactions on electron devices (01.09.2016)
Published in IEEE transactions on electron devices (01.09.2016)
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Journal Article
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
Jie Hu, Stoffels, Steve, Ming Zhao, Tallarico, Andrea Natale, Rossetto, Isabella, Meneghini, Matteo, Xuanwu Kang, Bakeroot, Benoit, Marcon, Denis, Kaczer, Ben, Decoutere, Stefaan, Groeseneken, Guido
Published in IEEE electron device letters (01.03.2017)
Published in IEEE electron device letters (01.03.2017)
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Journal Article
Substrate Network Modeling for Lateral p-GaN Gate HEMTs in a 200V GAN-IC Platform
Alaei, Mojtaba, De Pauw, Herbert, Chatterjee, Urmimala, Decoutere, Stefaan, Lauwaert, Johan, Bakeroot, Benoit
Published in 2023 International Semiconductor Conference (CAS) (11.10.2023)
Published in 2023 International Semiconductor Conference (CAS) (11.10.2023)
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Conference Proceeding
On the Identification of Buffer Trapping for Bias-Dependent Dynamic [Formula Omitted] of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier
Hu, Jie, Stoffels, Steve, Lenci, Silvia, Groeseneken, Guido, Decoutere, Stefaan
Published in IEEE electron device letters (01.03.2016)
Published in IEEE electron device letters (01.03.2016)
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Journal Article
Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI
Li, Xiangdong, Zhao, Ming, Bakeroot, Benoit, Geens, Karen, Guo, Weiming, You, Shuzhen, Stoffels, Steve, Lempinen, Vesa-Pekka, Sormunen, Jaakko, Groeseneken, Guido, Decoutere, Stefaan
Published in IEEE transactions on electron devices (01.01.2019)
Published in IEEE transactions on electron devices (01.01.2019)
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Journal Article
Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates
Li, Xiangdong, Geens, Karen, Wellekens, Dirk, Zhao, Ming, Magnani, Alessandro, Amirifar, Nooshin, Bakeroot, Benoit, You, Shuzhen, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Odnoblyudov, Vlad, Aktas, Ozgur, Basceri, Cem, Marcon, Denis, Groeseneken, Guido, Decoutere, Stefaan
Published in IEEE transactions on semiconductor manufacturing (01.11.2020)
Published in IEEE transactions on semiconductor manufacturing (01.11.2020)
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Journal Article
Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-μm Buffer Thickness by Local Substrate Removal
SRIVASTAVA, Puneet, DAS, Jo, DECOUTERE, Stefaan, MERTENS, Robert P, BORGHS, Gustaaf, VISALLI, Domenica, VAN HOVE, Marleen, MALINOWSKI, Pawel E, MARCON, Denis, LENCI, Silvia, GEENS, Karen, KAI CHENG, LEYS, Maarten
Published in IEEE electron device letters (2011)
Published in IEEE electron device letters (2011)
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Journal Article
Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress
Ruzzarin, Maria, Meneghini, Matteo, Rossetto, Isabella, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE electron device letters (01.11.2016)
Published in IEEE electron device letters (01.11.2016)
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Journal Article
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Borga, Matteo, Mukherjee, Kalparupa, De Santi, Carlo, Stoffels, Steve, Geens, Karen, You, Shuzhen, Bakeroot, Benoit, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Published in Applied physics express (01.02.2020)
Published in Applied physics express (01.02.2020)
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Journal Article
Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability
Gallardo, Jethro Oroceo, Dash, Sachidananda, Tran, Thanh Nga, Huang, Zhen-Hong, Tang, Shun-Wei, Wellekens, Dirk, Bakeroot, Benoit, Syshchyk, Olga, De Jaeger, Brice, Decoutere, Stefaan, Wu, Tian-Li
Published in Microelectronics and reliability (01.07.2022)
Published in Microelectronics and reliability (01.07.2022)
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Journal Article
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation
Chvála, Aleš, Marek, Juraj, Príbytný, Patrik, Šatka, Alexander, Stoffels, Steve, Posthuma, Niels, Decoutere, Stefaan, Donoval, Daniel
Published in Microelectronics and reliability (01.11.2017)
Published in Microelectronics and reliability (01.11.2017)
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Journal Article
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on \Delta V} and Underlying Degradation Mechanisms
Tallarico, Andrea Natale, Stoffels, Steve, Posthuma, Niels, Magnone, Paolo, Marcon, Denis, Decoutere, Stefaan, Sangiorgi, Enrico, Fiegna, Claudio
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article