Titanium Silicide/Titanium Nitride Full Metal Gates for Dual-Channel Gate-First CMOS
Frank, Martin M., Cabral, Cyril, Dechene, Jessica M., Ortolland, Claude, Yu Zhu, Marshall, Eric D., Murray, Conal E., Chudzik, Michael P.
Published in IEEE electron device letters (01.02.2016)
Published in IEEE electron device letters (01.02.2016)
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