Determination of the Free Gibbs Energy of Plate-Like Precipitates of Hydrogen Molecules and Silicon Vacancies Formed after H+ Ion Implantation into Silicon and Annealing
Cherkashin, Nikolay, Claverie, Alain, Darras, Francois Xavier
Published in Solid state phenomena (2016)
Published in Solid state phenomena (2016)
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Journal Article
Modelling of point defect complex formation and its application to H+ ion implanted silicon
Cherkashin, N., Darras, F.-X., Pochet, P., Reboh, S., Ratel-Ramond, N., Claverie, A.
Published in Acta materialia (01.10.2015)
Published in Acta materialia (01.10.2015)
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Journal Article
Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers
Darras, F.-X., Cherkashin, N., Cristiano, F., Scheid, E., Kononchuk, O., Capello, L., Claverie, A.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15.05.2014)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15.05.2014)
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