Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN
Kruszewski, P, Kaminski, P, Kozlowski, R, Zelazko, J, Czernecki, R, Leszczynski, M, Turos, A
Published in Semiconductor science and technology (01.03.2021)
Published in Semiconductor science and technology (01.03.2021)
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Journal Article
A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN
Kamyczek, P., Placzek-Popko, E., Kolkovsky, Vl, Grzanka, S., Czernecki, R.
Published in Journal of applied physics (01.06.2012)
Published in Journal of applied physics (01.06.2012)
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Journal Article
Cavity suppression in nitride based superluminescent diodes
Kafar, A., Stańczyk, S., Grzanka, S., Czernecki, R., Leszczyński, M., Suski, T., Perlin, P.
Published in Journal of applied physics (15.04.2012)
Published in Journal of applied physics (15.04.2012)
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Journal Article
Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field
Suski, T., Łepkowski, S. P., Staszczak, G., Czernecki, R., Perlin, P., Bardyszewski, W.
Published in Journal of applied physics (01.09.2012)
Published in Journal of applied physics (01.09.2012)
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Journal Article
Bandgap behavior of InGaN/GaN short period superlattices grown by metal‐organic vapor phase epitaxy
Staszczak, G., Gorczyca, I., Grzanka, E., Smalc‐Koziorowska, J., Targowski, G., Czernecki, R., Siekacz, M., Grzanka, S., Skierbiszewski, C., Schulz, T., Christensen, N. E., Suski, T.
Published in physica status solidi (b) (01.08.2017)
Published in physica status solidi (b) (01.08.2017)
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Journal Article
Optimization of InGaN-GaN MQW Photodetector Structures for High-Responsivity Performance
Pereiro, J., Rivera, C., Navarro, A., Munoz, E., Czernecki, R., Grzanka, S., Leszczynski, M.
Published in IEEE journal of quantum electronics (01.06.2009)
Published in IEEE journal of quantum electronics (01.06.2009)
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Journal Article
Influence of GaN substrate off-cut on properties of InGaN and AlGaN layers
Sarzynski, M., Leszczynski, M., Krysko, M., Domagala, J. Z., Czernecki, R., Suski, T.
Published in Crystal research and technology (1979) (01.03.2012)
Published in Crystal research and technology (1979) (01.03.2012)
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Journal Article
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
Leszczynski, M., Czernecki, R., Krukowski, S., Krysko, M., Targowski, G., Prystawko, P., Plesiewicz, J., Perlin, P., Suski, T.
Published in Journal of crystal growth (01.03.2011)
Published in Journal of crystal growth (01.03.2011)
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Conference Proceeding
AlGaInN diode-laser technology for optical clocks and atom interferometry
Najda, S P, Perlin, P, Suski, T, Marona, L, Stanczyk, S, Leszczyński, M, Wisniewski, P, Czernecki, R, Targowski, G, Carson, C, Stothard, D, McKnight, L J
Published in Journal of physics. Conference series (01.02.2017)
Published in Journal of physics. Conference series (01.02.2017)
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Journal Article
Lateral grating DFB AlGaInN laser diodes for optical communications and atomic clocks
Najda, S P, Slight, T, Perlin, P, Odedina, O, Suski, T, Marona, L, Stanczyk, S, Leszczyński, M, Wisniewski, P, Czernecki, R, Targowski, G, Kelly, A E
Published in Journal of physics. Conference series (01.02.2017)
Published in Journal of physics. Conference series (01.02.2017)
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Journal Article
Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates
Suski, T., Staszczak, G., Grzanka, S., Czernecki, R., Litwin-Staszewska, E., Piotrzkowski, R., Dmowski, L. H., Khachapuridze, A., Kryśko, M., Perlin, P., Grzegory, I.
Published in Journal of applied physics (15.07.2010)
Published in Journal of applied physics (15.07.2010)
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Journal Article
Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior
Dmowski, L. H., Baj, M., Suski, T., Przybytek, J., Czernecki, R., Wang, X., Yoshikawa, A., Lu, H., Schaff, W. J., Muto, D., Nanishi, Y.
Published in Journal of applied physics (15.06.2009)
Published in Journal of applied physics (15.06.2009)
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Journal Article
InGaN tapered laser diodes
STANCZYK, S, KAFAR, A, SUSKI, T, WISNIEWSKI, P, CZERNECKI, R, LESZCZYNSKI, M, ZAJAC, M, PERLIN, P
Published in Electronics letters (13.09.2012)
Published in Electronics letters (13.09.2012)
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Journal Article
Nitride-based quantum structures and devices on modified GaN substrates
Perlin, Piotr, Franssen, Gijs, Szeszko, Justyna, Czernecki, R., Targowski, Grzegorz, Kryśko, Marcin, Grzanka, Szymon, Nowak, Grzegorz, Litwin-Staszewska, Elżbieta, Piotrzkowski, Ryszard, Leszczyński, Mike, Łucznik, Bolek, Grzegory, Izabella, Jakieła, Rafał, Albrecht, Martin, Suski, Tadek
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
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Journal Article
Conference Proceeding
Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction
Kret, S, Dłużewski, P, Szczepańska, A, Żak, M, Czernecki, R, Kryśko, M, Leszczyński, M, Maciejewski, G
Published in Nanotechnology (21.11.2007)
Published in Nanotechnology (21.11.2007)
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Journal Article
Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates
PŁaczek-Popko, E., Trzmiel, J., Zielony, E., Grzanka, S., Czernecki, R., Suski, T.
Published in Physica. B, Condensed matter (15.12.2009)
Published in Physica. B, Condensed matter (15.12.2009)
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Journal Article
New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation
PŁUSKA, M, CZERWINSKI, A, RATAJCZAK, J, KĄTCKI, J, MARONA, L, CZERNECKI, R, LESZCZYŃSKI, M, PERLIN, P
Published in Journal of microscopy (Oxford) (01.11.2009)
Published in Journal of microscopy (Oxford) (01.11.2009)
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Journal Article
Fabrication and properties of GaN-based lasers
Perlin, P., Świetlik, T., Marona, L., Czernecki, R., Suski, T., Leszczyński, M., Grzegory, I., Krukowski, S., Nowak, G., Kamler, G., Czerwinski, A., Plusa, M., Bednarek, M., Rybiński, J., Porowski, S.
Published in Journal of crystal growth (15.08.2008)
Published in Journal of crystal growth (15.08.2008)
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Journal Article
Conference Proceeding
Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate
Swietlik, T., Franssen, G., Czernecki, R., Leszczynski, M., Skierbiszewski, C., Grzegory, I., Suski, T., Perlin, P., Lauterbach, C., Schwarz, U. T.
Published in Journal of applied physics (15.04.2007)
Published in Journal of applied physics (15.04.2007)
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Journal Article
Control of Mg doping of GaN in RF-plasma molecular beam epitaxy
Feduniewicz, A., Skierbiszewski, C., Siekacz, M., Wasilewski, Z.R., Sproule, I., Grzanka, S., Jakieła, R., Borysiuk, J., Kamler, G., Litwin-Staszewska, E., Czernecki, R., Boćkowski, M., Porowski, S.
Published in Journal of crystal growth (01.05.2005)
Published in Journal of crystal growth (01.05.2005)
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Conference Proceeding