Numerical study of a sinusoidal transverse propeller
Fasse, G, Bayeul-Lainé, A C, Coutier-Delgosha, O, Curutchet, A, Paillard, B, Hauville, F
Published in IOP conference series. Earth and environmental science (27.03.2019)
Published in IOP conference series. Earth and environmental science (27.03.2019)
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Journal Article
Influence of Expectations Created by Label on Consumers Acceptance of Uruguayan Low-Fat Cheeses
Arcia, P.L., Curutchet, A., Costell, E., Tárrega, A.
Published in Journal of sensory studies (01.10.2012)
Published in Journal of sensory studies (01.10.2012)
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Journal Article
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress
Brunel, L., Lambert, B., Mezenge, P., Bataille, J., Floriot, D., Grünenpütt, J., Blanck, H., Carisetti, D., Gourdel, Y., Malbert, N., Curutchet, A., Labat, N.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Journal Article
Conference Proceeding
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
Karboyan, S., Tartarin, J.G., Rzin, M., Brunel, L., Curutchet, A., Malbert, N., Labat, N., Carisetti, D., Lambert, B., Mermoux, M., Romain-Latu, E., Thomas, F., Bouexière, C., Moreau, C.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Journal Article
Conference Proceeding
Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature
Iñiguez-de-la-Torre, I, González, T, Pardo, D, Gardès, C, Roelens, Y, Bollaert, S, Curutchet, A, Gaquiere, C, Mateos, J
Published in Semiconductor science and technology (10.12.2010)
Published in Semiconductor science and technology (10.12.2010)
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Journal Article
A test structure set for on-wafer 3D-TRL calibration
Potereau, M., Curutchet, A., D'Esposito, R., De Matos, M., Fregonese, S., Zimmer, T.
Published in 2016 International Conference on Microelectronic Test Structures (ICMTS) (01.03.2016)
Published in 2016 International Conference on Microelectronic Test Structures (ICMTS) (01.03.2016)
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Journal Article
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test
Lambert, B., Labat, N., Carisetti, D., Karboyan, S., Tartarin, J.G., Thorpe, J., Brunel, L., Curutchet, A., Malbert, N., Latu-Romain, E., Mermoux, M.
Published in Microelectronics and reliability (01.09.2012)
Published in Microelectronics and reliability (01.09.2012)
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Journal Article
Uranium Uptake by Montmorillonite-Biomass Complexes
Olivelli, Melisa S, Curutchet, Gustavo A, Torres Sánchez, Rosa M
Published in Industrial & engineering chemistry research (13.02.2013)
Published in Industrial & engineering chemistry research (13.02.2013)
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Journal Article
Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors
Curutchet, A., Theron, D., Werquin, M., Ducatteau, D., Happy, H., Dambrine, G., Bethoux, J.M., Derycke, V., Gaquiere, C.
Published in IEEE transactions on microwave theory and techniques (01.07.2008)
Published in IEEE transactions on microwave theory and techniques (01.07.2008)
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Journal Article
Importance of the Hydration Degree in the Use of Clay–Fungal Biocomposites as Adsorbents for Uranium Uptake
Olivelli, Melisa S, Schampera, Birgit, Woche, Susanne K, Torres Sánchez, Rosa M, Curutchet, Gustavo A
Published in Industrial & engineering chemistry research (15.03.2017)
Published in Industrial & engineering chemistry research (15.03.2017)
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Journal Article
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements
Sozza, A., Curutchet, A., Dua, C., Malbert, N., Labat, N., Touboul, A.
Published in Microelectronics and reliability (01.09.2006)
Published in Microelectronics and reliability (01.09.2006)
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Journal Article
Conference Proceeding
RF doubling and rectification in three-terminal junctions: experimental characterization and Monte Carlo analysis
Iñiguez-de-la-Torre, I, González, T, Pardo, D, Gardès, C, Roelens, Y, Bollaert, S, Curutchet, A, Gaquiere, C, Mateos, J
Published in Journal of physics. Conference series (01.11.2009)
Published in Journal of physics. Conference series (01.11.2009)
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Journal Article
Environmental biotechnology and engineering: two convergent areas to provide real solutions for a growing world
Candal, Roberto, Curutchet, Gustavo A., Domínguez-Montero, Lilian, Macarie, Hervé, Poggi-Varaldo, Héctor M., Sastre-Conde, Isabel, Vázquez, Susana C.
Published in Environmental science and pollution research international (01.08.2018)
Published in Environmental science and pollution research international (01.08.2018)
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Journal Article
Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates
Curutchet, A., Malbert, N., Labat, N., Touboul, A, Gaquière, C., Minko, A., Uren, M.
Published in Microelectronics and reliability (01.09.2003)
Published in Microelectronics and reliability (01.09.2003)
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Journal Article
Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs
Malbert, N, Labat, N, Curutchet, A, Sury, C, Hoel, V, de Jaeger, J.-C, Defrance, N, Douvry, Y, Dua, C, Oualli, M, Piazza, M, Bru-Chevallier, C, Bluet, J.-M, Chikhaoui, W
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
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Conference Proceeding
Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests
Magnier, F., Lambert, B., Chang, C., Curutchet, A., Labat, N., Malbert, N.
Published in Microelectronics and reliability (01.09.2019)
Published in Microelectronics and reliability (01.09.2019)
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Journal Article
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices
Mukherjee, K., Darracq, F., Curutchet, A., Malbert, N., Labat, N.
Published in Microelectronics and reliability (01.09.2017)
Published in Microelectronics and reliability (01.09.2017)
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Journal Article
Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design
Khandelwal, Sourabh, Yadav, Chandan, Agnihotri, Shantanu, Chauhan, Yogesh Singh, Curutchet, Arnaud, Zimmer, Thomas, De Jaeger, Jean-Claude, Defrance, Nicolas, Fjeldly, Tor A.
Published in IEEE transactions on electron devices (01.10.2013)
Published in IEEE transactions on electron devices (01.10.2013)
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Journal Article
PDMS-based porous particles as support beds for cell immobilization: Bacterial biofilm formation as a function of porosity and polymer composition
Fernández, M.R., Casabona, M.G., Anupama, V.N., Krishnakumar, B., Curutchet, G.A., Bernik, D.L.
Published in Colloids and surfaces, B, Biointerfaces (01.11.2010)
Published in Colloids and surfaces, B, Biointerfaces (01.11.2010)
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Journal Article
Schottky gate of AlGaN/GaN HEMTs: Investigation with DC and low frequency noise measurements after 7000 hours HTOL test
Rzin, M., Curutchet, A., Labat, N., Malbert, N., Brunel, L., Lambert, B.
Published in 2015 International Conference on Noise and Fluctuations (ICNF) (01.06.2015)
Published in 2015 International Conference on Noise and Fluctuations (ICNF) (01.06.2015)
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Conference Proceeding