Quantum engineering at the silicon surface using dangling bonds
Schofield, S R, Studer, P, Hirjibehedin, C F, Curson, N J, Aeppli, G, Bowler, D R
Published in Nature communications (03.04.2013)
Published in Nature communications (03.04.2013)
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Atomically precise placement of single dopants in si
Schofield, S R, Curson, N J, Simmons, M Y, Ruess, F J, Hallam, T, Oberbeck, L, Clark, R G
Published in Physical review letters (26.09.2003)
Published in Physical review letters (26.09.2003)
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Phosphine dissociation on the Si(001) surface
Wilson, H F, Warschkow, O, Marks, N A, Schofield, S R, Curson, N J, Smith, P V, Radny, M W, McKenzie, D R, Simmons, M Y
Published in Physical review letters (26.11.2004)
Published in Physical review letters (26.11.2004)
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Journal Article
Progress in silicon-based quantum computing
Clark, R. G., Brenner, R., Buehler, T. M., Chan, V., Curson, N. J., Dzurak, A. S., Gauja, E., Goan, H. S., Greentree, A. D., Hallam, T., Hamilton, A. R., Hollenberg, L. C. L., Jamieson, D. N., McCallum, J. C., Milburn, G. J., O'Brien, J. L., Oberbeck, L., Pakes, C. I., Prawer, S. D., Reilly, D. J., Ruess, F. J., Schofield, S. R., Simmons, M. Y., Stanley, F. E., Starrett, R. P., Wellard, C., Yang, C.
Published in Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences (15.07.2003)
Published in Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences (15.07.2003)
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Journal Article
Reaction paths of phosphine dissociation on silicon (001)
Warschkow, O, Curson, N J, Schofield, S R, Marks, N A, Wilson, H F, Radny, M W, Smith, P V, Reusch, T C G, McKenzie, D R, Simmons, M Y
Published in The Journal of chemical physics (07.01.2016)
Published in The Journal of chemical physics (07.01.2016)
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Journal Article
Comparison of GaP and PH3 as dopant sources for STM-based device fabrication
Goh, Kuan Eng Johnson, Oberbeck, L, Butcher, M J, Curson, N J, Rueß, F J, Simmons, M Y
Published in Nanotechnology (14.02.2007)
Published in Nanotechnology (14.02.2007)
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Journal Article
Doping and STM tip-induced changes to single dangling bonds on Si(0 0 1)
Reusch, T.C.G., Warschkow, O., Radny, M.W., Smith, P.V., Marks, N.A., Curson, N.J., McKenzie, D.R., Simmons, M.Y.
Published in Surface science (15.09.2007)
Published in Surface science (15.09.2007)
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Conference Proceeding
Growth and evolution of nickel germanide nanostructures on Ge(001)
Grzela, T, Capellini, G, Koczorowski, W, Schubert, M A, Czajka, R, Curson, N J, Heidmann, I, Schmidt, Th, Falta, J, Schroeder, T
Published in Nanotechnology (25.09.2015)
Published in Nanotechnology (25.09.2015)
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Ba termination of Ge(001) studied with STM
Koczorowski, W, Grzela, T, Radny, M W, Schofield, S R, Capellini, G, Czajka, R, Schroeder, T, Curson, N J
Published in Nanotechnology (17.04.2015)
Published in Nanotechnology (17.04.2015)
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Journal Article
Phosphorus and hydrogen atoms on the (0 0 1) surface of silicon: A comparative scanning tunnelling microscopy study of surface species with a single dangling bond
Reusch, T.C.G., Curson, N.J., Schofield, S.R., Hallam, T., Simmons, M.Y.
Published in Surface science (15.01.2006)
Published in Surface science (15.01.2006)
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Journal Article
Ge(001) surface reconstruction with Sn impurities
Noatschk, K., Hofmann, E.V.S., Dabrowski, J., Curson, N.J., Schroeder, T., Klesse, W.M., Seibold, G.
Published in Surface science (01.11.2021)
Published in Surface science (01.11.2021)
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Journal Article
Hydrogen resist lithography and electron beam lithography for fabricating silicon targets for studying donor orbital states
Crane, E., Kölker, A., Stock, T. Z., Stavrias, N., Saeedi, K., van Loon, M. A. W., Murdin, B. N., Curson, N. J.
Published in Journal of physics. Conference series (01.08.2018)
Published in Journal of physics. Conference series (01.08.2018)
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STM imaging of buried P atoms in hydrogen-terminated Si for the fabrication of a Si:P quantum computer
Oberbeck, L., Curson, N.J., Hallam, T., Simmons, M.Y., Clark, R.G.
Published in Thin solid films (01.10.2004)
Published in Thin solid films (01.10.2004)
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Modification of a shallow 2DEG by AFM lithography
Nemutudi, R., Curson, N.J., Appleyard, N.J., Ritchie, D.A., Jones, G.A.C.
Published in Microelectronic engineering (01.09.2001)
Published in Microelectronic engineering (01.09.2001)
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Conference Proceeding
Scanning probe microscopy for silicon device fabrication
Simmons, M.Y., Ruess, F.J., Goh, K.E.J., Hallam, T., Schofield, S.R., Oberbeck, L., Curson, N.J., Hamilton, A.R., Butcher, M.J., Clark, R.G., Reusch, T.C.G.
Published in Molecular simulation (01.05.2005)
Published in Molecular simulation (01.05.2005)
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Journal Article
Valence surface electronic states on Ge(001)
Radny, M W, Shah, G A, Schofield, S R, Smith, P V, Curson, N J
Published in Physical review letters (20.06.2008)
Published in Physical review letters (20.06.2008)
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Journal Article
Electronic effects of single H atoms on Ge(001) revisited
Shah, G A, Radny, M W, Smith, P V, Schofield, S R, Curson, N J
Published in The Journal of chemical physics (07.07.2010)
Published in The Journal of chemical physics (07.07.2010)
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Scanning tunnelling microscope fabrication of arrays of phosphorus atom qubits for a silicon quantum computer
O’Brien, J L, Schofield, S R, Simmons, M Y, Clark, R G, Dzurak, A S, Curson, N J, Kane, B E, McAlpine, N S, Hawley, M E, Brown, G W
Published in Smart materials and structures (01.10.2002)
Published in Smart materials and structures (01.10.2002)
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Journal Article
Electronic effects induced by single hydrogen atoms on the Ge(001) surface
Radny, M W, Shah, G A, Smith, P V, Schofield, S R, Curson, N J
Published in The Journal of chemical physics (28.06.2008)
Published in The Journal of chemical physics (28.06.2008)
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