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Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C
Curran, Anya, Gocalinska, Agnieszka, Pescaglini, Andrea, Secco, Eleonora, Mura, Enrica, Thomas, Kevin, Nagle, Roger E., Sheehan, Brendan, Povey, Ian M., Pelucchi, Emanuele, O’Dwyer, Colm, Hurley, Paul K., Gity, Farzan
Published in Crystals (Basel) (01.02.2021)
Published in Crystals (Basel) (01.02.2021)
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High Hole Mobility Polycrystalline GaSb Thin Films
Curran, Anya, Gity, Farzan, Gocalinska, Agnieszka, Mura, Enrica, Nagle, Roger E., Schmidt, Michael, Sheehan, Brendan, Pelucchi, Emanuele, O’Dwyer, Colm, Hurley, Paul K.
Published in Crystals (Basel) (01.11.2021)
Published in Crystals (Basel) (01.11.2021)
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Doping of ultra-thin Si films: Combined first-principles calculations and experimental study
Gity, Farzan, Meaney, Fintan, Curran, Anya, Hurley, Paul K., Fahy, Stephen, Duffy, Ray, Ansari, Lida
Published in Journal of applied physics (07.01.2021)
Published in Journal of applied physics (07.01.2021)
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Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III-V metalorganic vapour phase epitaxy thin films on amorphous substrates
Gocalinska, Agnieszka, Pescaglini, Andrea, Secco, Eleonora, Mura, Enrica E, Thomas, Kevin, Curran, Anya, Gity, Farzan, Nagle, Roger, Schmidt, Michael, Micha owski, Pawe P, Hurley, Paul K, Povey, Ian, Pelucchi, Emanuele
Published in JPhys photonics (02.03.2020)
Published in JPhys photonics (02.03.2020)
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Investigating Polycrystalline III-V Thin Films As Channel Materials for “Above IC” Logic and Memory Applications
Curran, Anya, Secco, Eleonora, Pescaglini, Andrea, Gocalinska, Agnieszka, Mura, Enrica, Thomas, Kevin, Povey, Ian M, Pelucchi, Emanuele, O'Dwyer, Colm, Hurley, P. K., Gity, Farzan
Published in Meeting abstracts (Electrochemical Society) (23.07.2018)
Published in Meeting abstracts (Electrochemical Society) (23.07.2018)
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