Study of heavy ion induced single event gate rupture effect in SiC MOSFETs
Xiaowen, Liang, Haonan, Feng, Xiaojuan, Pu, Jiangwei, Cui, Jing, Sun, Ying, Wei, Dan, Zhang, Xuefeng, Yu, Qi, Guo
Published in Japanese Journal of Applied Physics (01.08.2022)
Published in Japanese Journal of Applied Physics (01.08.2022)
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Journal Article
Degradation Mechanisms of Gate leakage in GaN-based HEMTs at Low Dose Rate Irradiation
Li, Xiaolong, Wang, Xin, Liu, Mohan, Zhu, Kunfeng, Shui, Guohua, Zheng, Qiwen, Cui, Jiangwei, Lu, Wu, Li, Yudong, Guo, Qi
Published in IEEE access (01.01.2024)
Published in IEEE access (01.01.2024)
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Journal Article
The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET
Wang, Baoshun, Cui, Jiangwei, Guo, Qi, Zheng, Qiwen, Wei, Ying, Xi, Shanxue
Published in Journal of semiconductors (01.12.2020)
Published in Journal of semiconductors (01.12.2020)
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Journal Article
Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs
Zheng, Qiwen, Cui, Jiangwei, Liu, Mengxin, Zhou, Hang, Liu, Mohan, Wei, Ying, Su, Dandan, Ma, Teng, Lu, Wu, Yu, Xuefeng, Guo, Qi, He, Chengfa
Published in IEEE transactions on nuclear science (01.07.2017)
Published in IEEE transactions on nuclear science (01.07.2017)
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Journal Article
A comparison of TEM data from different near-source systems
Zhou, Nannan, Xue, Guoqiang, Chen, Weiying, Cui, Jiangwei, Chen, Kang
Published in Journal of geophysics and engineering (01.06.2017)
Published in Journal of geophysics and engineering (01.06.2017)
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Journal Article
Impact of switching frequencies on the TID response of SiC power MOSFETs
Yang, Sheng, Liang, Xiaowen, Cui, Jiangwei, Zheng, Qiwen, Sun, Jing, Liu, Mohan, Zhang, Dang, Feng, Haonan, Yu, Xuefeng, Xiang, Chuanfeng, Li, Yudong, Guo, Qi
Published in Journal of semiconductors (01.08.2021)
Published in Journal of semiconductors (01.08.2021)
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Journal Article
A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs
Zhao, Jinghao, Zheng, Qiwen, Cui, Jiangwei, Zhou, Hang, Liang, Xiaowen, Yu, Xuefeng, Guo, Qi
Published in Results in physics (01.06.2019)
Published in Results in physics (01.06.2019)
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Journal Article
Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs
Jiangwei Cui, Qiwen Zheng, Bingxu Ning, Xuefeng Yu, Kai Zhao, Ying Wei, Wu Lu, Chengfa He, Diyuan Ren, Fang Yu, Liewei Xu, Qi Guo
Published in 2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) (01.07.2018)
Published in 2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018) (01.07.2018)
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Conference Proceeding
Total dose ionizing irradiation effects on a static random access memory field programmable gate array
Gao, Bo, Yu, Xuefeng, Ren, Diyuan, Li, Yudong, Sun, Jing, Cui, Jiangwei, Wang, Yiyuan, Li, Ming
Published in Journal of semiconductors (01.03.2012)
Published in Journal of semiconductors (01.03.2012)
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Journal Article
Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si)
Zhang, Ruiqin, Cui, Jiangwei, Li, Yudong, Guo, Qi, Zheng, Qiwen
Published in IEEE transactions on electron devices (01.06.2024)
Published in IEEE transactions on electron devices (01.06.2024)
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Journal Article
Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells
Zheng, Qiwen, Cui, Jiangwei, Li, Yudong, Guo, Qi
Published in IEEE transactions on nuclear science (01.03.2024)
Published in IEEE transactions on nuclear science (01.03.2024)
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Journal Article
Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs
Wu, Haowen, Cui, Jiangwei, Li, Yudong, Guo, Qi, Zheng, Qiwen
Published in IEEE transactions on nuclear science (01.02.2024)
Published in IEEE transactions on nuclear science (01.02.2024)
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Journal Article
Anneal Behavior of Total Ionizing Dose Irradiated UTBB FD-SOI n-MOSFETs Activated by Hot Carrier Stress
Zheng, Qiwen, Cui, Jiangwei, Yu, Xuefeng, Li, Yudong, Guo, Qi
Published in IEEE transactions on nuclear science (01.01.2023)
Published in IEEE transactions on nuclear science (01.01.2023)
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Journal Article