Lifetime Studies of 130 nm nMOS Transistors Intended for Long-Duration, Cryogenic High-Energy Physics Experiments
Hoff, J. R., Arora, R., Cressler, J. D., Deptuch, G. W., Gui, P., Lourenco, N. E., Wu, G., Yarema, R. J.
Published in IEEE transactions on nuclear science (01.08.2012)
Published in IEEE transactions on nuclear science (01.08.2012)
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Journal Article
5 MeV Proton irradiation effects on 200 GHz silicon-germanium heterojunction bipolar transistors
Gnana Prakash, A. P., Hegde, Vinayakprasanna N., Pradeep, T. M., Pushpa, N., Bajpai, P. K., Patel, S. P., Trivedi, Tarkeshwar, Cressler, J. D.
Published in Radiation effects and defects in solids (02.12.2017)
Published in Radiation effects and defects in solids (02.12.2017)
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Journal Article
Multiple-Bit Upset in 130 nm CMOS Technology
Tipton, A.D., Pellish, J.A., Reed, R.A., Schrimpf, R.D., Weller, R.A., Mendenhall, M.H., Sierawski, B., Sutton, A.K., Diestelhorst, R.M., Espinel, G., Cressler, J.D., Marshall, P.W., Vizkelethy, G.
Published in IEEE transactions on nuclear science (01.12.2006)
Published in IEEE transactions on nuclear science (01.12.2006)
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Journal Article
The revolution in SiGe: impact on device electronics
Harame, D.L, Koester, S.J, Freeman, G, Cottrel, P, Rim, K, Dehlinger, G, Ahlgren, D, Dunn, J.S, Greenberg, D, Joseph, A, Anderson, F, Rieh, J.-S, Onge, S.A.S.T, Coolbaugh, D, Ramachandran, V, Cressler, J.D, Subbanna, S
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
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Journal Article
Conference Proceeding
Nuclear microbeam studies of silicon–germanium heterojunction bipolar transistors (HBTs)
Vizkelethy, G., Phillips, S.D., Najafizadeh, L., Cressler, J.D.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.06.2010)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.06.2010)
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Journal Article
Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)
Marshall, P., Carts, M., Currie, S., Reed, R., Randall, B., Fritz, K., Kennedy, K., Berg, M., Krithivasan, R., Siedleck, C., Ladbury, R., Marshall, C., Cressler, J., Guofu Niu, LaBel, K., Gilbert, B.
Published in IEEE transactions on nuclear science (01.12.2005)
Published in IEEE transactions on nuclear science (01.12.2005)
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Journal Article
Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits
Najafizadeh, L., Phillips, S.D., Moen, K.A., Diestelhorst, R.M., Bellini, M., Saha, P.K., Cressler, J.D., Vizkelethy, G., Turowski, M., Raman, A., Marshall, P.W.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology
MORTON, M. A, COMEAU, J. P, CRESSLER, J. D, MITCHELL, M, PAPAPOLYMEROU, J
Published in IET microwaves, antennas & propagation (01.02.2008)
Published in IET microwaves, antennas & propagation (01.02.2008)
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Journal Article
A unified approach to RF and microwave noise parameter modeling in bipolar transistors
Niu, G., Cressler, J.D., Shiming Zhang, Ansley, W.E., Webster, C.S., Harame, D.L.
Published in IEEE transactions on electron devices (01.11.2001)
Published in IEEE transactions on electron devices (01.11.2001)
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Journal Article
Optimization of SiGe bandgap-based circuits for up to 300°C operation
Thomas, D.B., Najafizadeh, L., Cressler, J.D., Moen, K.A., Lourenco, N.
Published in Solid-state electronics (01.02.2011)
Published in Solid-state electronics (01.02.2011)
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Journal Article
A Novel Device Architecture for SEU Mitigation: The Inverse-Mode Cascode SiGe HBT
Phillips, S.D., Thrivikraman, T., Appaswamy, A., Sutton, A.K., Cressler, J.D., Vizkelethy, G., Dodd, P., Reed, R.A.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs
Pellish, J.A., Reed, R.A., McMorrow, D., Vizkelethy, G., Cavrois, V.F., Baggio, J., Paillet, P., Duhamel, O., Moen, K.A., Phillips, S.D., Diestelhorst, R.M., Cressler, J.D., Sutton, A.K., Raman, A., Turowski, M., Dodd, P.E., Alles, M.L., Schrimpf, R.D., Marshall, P.W., LaBel, K.A.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
Laser-Induced Current Transients in Silicon-Germanium HBTs
Pellish, J.A., Reed, R.A., McMorrow, D., Melinger, J.S., Jenkins, P., Sutton, A.K., Diestelhorst, R.M., Phillips, S.D., Cressler, J.D., Pouget, V., Pate, N.D., Kozub, J.A., Mendenhall, M.H., Weller, R.A., Schrimpf, R.D., Marshall, P.W., Tipton, A.D., Niu, G.
Published in IEEE transactions on nuclear science (01.12.2008)
Published in IEEE transactions on nuclear science (01.12.2008)
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Journal Article
Si/SiGe epitaxial-base transistors - Part I: Materials, physics, and circuits
Harame, D L, Comfort, J H, Cressler, J D, Crabbe, E F, Sun, J Y-C, Meyerson, B S, Tice, T
Published in IEEE transactions on electron devices (01.01.1995)
Published in IEEE transactions on electron devices (01.01.1995)
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Journal Article
An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs
Sutton, A.K., Prakash, A.P.G., Bongim Jun, Enhai Zhao, Bellini, M., Pellish, J., Diestelhorst, R.M., Carts, M.A., Phan, A., Ladbury, R., Cressler, J.D., Marshall, Paul.W., Marshall, C.J., Reed, R.A., Schrimpf, R.D., Fleetwood, D.M.
Published in IEEE transactions on nuclear science (01.12.2006)
Published in IEEE transactions on nuclear science (01.12.2006)
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Journal Article