Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
Harame, D.L., Comfort, J.H., Cressler, J.D., Crabbe, E.F., Sun, J.Y.-C., Meyerson, B.S., Tice, T.
Published in IEEE transactions on electron devices (01.03.1995)
Published in IEEE transactions on electron devices (01.03.1995)
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Journal Article
On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations
Cressler, J.D., Comfort, J.H., Crabbe, E.F., Patton, G.L., Stork, J.M.C., Sun, J.Y.-C., Meyerson, B.S.
Published in IEEE transactions on electron devices (01.03.1993)
Published in IEEE transactions on electron devices (01.03.1993)
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Journal Article
On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues
Cressler, J.D., Crabbe, E.F., Comfort, J.H., Stork, J.M.C., Sun, J.Y.-C.
Published in IEEE transactions on electron devices (01.03.1993)
Published in IEEE transactions on electron devices (01.03.1993)
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Journal Article
Novel capacitor-less high density low power vertical memory
Tiwari, S., Hanafi, H., Hartstein, A., Crabbe, E.F., Powell, A.R., Iyer, S.S., Tierney, E.
Published in 52nd Annual Device Research Conference (1994)
Published in 52nd Annual Device Research Conference (1994)
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Conference Proceeding
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
Burghartz, J.N., Warnock, J., Cressler, J.D., Stanis, C.L., McIntosh, R.C., Sun, J.Y.-C., Comfort, J.H., Stork, J.M.C., Jenkins, K.A., Crabbé, E.F., Lee, W., Gilbert, M.
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)
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Journal Article
Conference Proceeding
SiGe-channel heterojunction p-MOSFET's
Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Johnson, J.B.
Published in IEEE transactions on electron devices (01.01.1994)
Published in IEEE transactions on electron devices (01.01.1994)
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Journal Article
Si/Si/sub 1-x/Ge/sub x/ valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure
Gan, C.H., del Alamo, J.A., Bennett, B.R., Meyerson, B.S., Crabbe, E.F., Sodini, C.G., Reif, L.R.
Published in IEEE transactions on electron devices (01.12.1994)
Published in IEEE transactions on electron devices (01.12.1994)
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Journal Article
73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
Crabbe, E.F., Comfort, J.H., Lee, W., Cressler, J.D., Meyerson, B.S., Megdanis, A.C., Sun, J.Y.-C., Stork, J.M.C.
Published in IEEE electron device letters (01.05.1992)
Published in IEEE electron device letters (01.05.1992)
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Journal Article
On the leverage of high-f/sub T/ transistors for advanced high-speed bipolar circuits
Chuang, C.T., Chin, K., Stork, J.M.C., Patton, G.L., Crabbe, E.F., Comfort, J.H.
Published in IEEE journal of solid-state circuits (01.02.1992)
Published in IEEE journal of solid-state circuits (01.02.1992)
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Journal Article
Current gain rolloff in graded-base SiGe heterojunction bipolar transistors
Crabbe, E.F., Cressler, J.D., Patton, G.L., Stork, J.M., Comfort, J.H., Sun, J.Y.-C.
Published in IEEE electron device letters (01.04.1993)
Published in IEEE electron device letters (01.04.1993)
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Journal Article
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
Harame, D.L., Comfort, J.H., Cressler, J.D., Crabbe, E.F., Sun, J.Y.-C., Meyerson, B.S., Tice, T.
Published in IEEE transactions on electron devices (01.03.1995)
Published in IEEE transactions on electron devices (01.03.1995)
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Journal Article
High-low polysilicon-emitter SiGe-base bipolar transistors
Crabbe, E.F., Comfort, J.H., Cressler, J.D., Sun, J.Y.-C., Stork, J.M.C.
Published in IEEE electron device letters (01.10.1993)
Published in IEEE electron device letters (01.10.1993)
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Journal Article
Low-temperature operation of SiGe p-n-p HBTs
Crabbe, E.F., Harame, D.L., Meyerson, B.S., Stork, J.M.C., Sun, J.Y.-C.
Published in IEEE transactions on electron devices (01.11.1992)
Published in IEEE transactions on electron devices (01.11.1992)
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Journal Article
Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors
Cressler, J.D., Comfort, J.H., Crabbe, E.F., Patton, G.L., Lee, W., Sun, J.Y., Stork, J.M.C., Meyerson, B.S.
Published in IEEE electron device letters (01.04.1991)
Published in IEEE electron device letters (01.04.1991)
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Journal Article
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbe, E.F., Scilla, G.J., de Fresart, E., Stork, J.M.C., Sun, J.Y.-C., Harame, D.L., Burghartz, J.N.
Published in IEEE electron device letters (01.04.1990)
Published in IEEE electron device letters (01.04.1990)
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Journal Article
High-mobility modulation-doped SiGe-channel p-MOSFETs
Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Megdanis, A.C., Stanis, C.L., Bright, A.A., Kroesen, G.M.W., Warren, A.C.
Published in IEEE electron device letters (01.08.1991)
Published in IEEE electron device letters (01.08.1991)
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Journal Article
An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature
Cressler, J.D., Comfort, J.H., Crabbe, E.F., Sun, J.Y.-C., Stork, J.M.C.
Published in 1992 Symposium on VLSI Technology Digest of Technical Papers (1992)
Published in 1992 Symposium on VLSI Technology Digest of Technical Papers (1992)
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Conference Proceeding